InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

V. Kachkanov; I.P. Dolbnya; Kevin O'Donnell; Robert Martin; Paul Edwards; S. Pereira

doi:10.1063/1.3658619

InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

V. Kachkanov, I.P. Dolbnya, Kevin O'Donnell, Robert Martin, Paul Edwards, S. Pereira

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Abstract

We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.

Original language	English
Article number	181909
Number of pages	3
Journal	Applied Physics Letters
Volume	99
Issue number	18
Early online date	4 Nov 2011
DOIs	https://doi.org/10.1063/1.3658619
Publication status	Published - 2011

Keywords

epitaxial growth
gallium nitride
gallium compounds
wide band gap semiconductors
TIC - Bionanotechnology

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APL_InGaN_Epilayer_CharacterizationFinal published version, 1.75 MB

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title = "InGaN epilayer characterization by microfocused x-ray reciprocal space mapping",

abstract = "We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.",

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AU - Kachkanov, V.

AU - Dolbnya, I.P.

AU - O'Donnell, Kevin

AU - Martin, Robert

AU - Edwards, Paul

AU - Pereira, S.

PY - 2011

Y1 - 2011

N2 - We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.

AB - We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.

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InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

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