InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

V. Kachkanov, I.P. Dolbnya, Kevin O'Donnell, Robert Martin, Paul Edwards, S. Pereira

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We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.
Original languageEnglish
Article number181909
Number of pages3
JournalApplied Physics Letters
Issue number18
Early online date4 Nov 2011
Publication statusPublished - 2011


  • epitaxial growth
  • gallium nitride
  • gallium compounds
  • wide band gap semiconductors
  • TIC - Bionanotechnology


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