InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

V. Kachkanov, I.P. Dolbnya, Kevin O'Donnell, Robert Martin, Paul Edwards, S. Pereira

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.
LanguageEnglish
Article number181909
Number of pages3
JournalApplied Physics Letters
Volume99
Issue number18
Early online date4 Nov 2011
DOIs
Publication statusPublished - 2011

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seeds
edge dislocations
microbalances
x rays

Keywords

  • epitaxial growth
  • gallium nitride
  • gallium compounds
  • wide band gap semiconductors
  • TIC - Bionanotechnology

Cite this

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abstract = "We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content 20{\%}-22{\%}. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.",
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InGaN epilayer characterization by microfocused x-ray reciprocal space mapping. / Kachkanov, V.; Dolbnya, I.P.; O'Donnell, Kevin; Martin, Robert; Edwards, Paul; Pereira, S.

In: Applied Physics Letters, Vol. 99, No. 18, 181909, 2011.

Research output: Contribution to journalArticle

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AU - Kachkanov, V.

AU - Dolbnya, I.P.

AU - O'Donnell, Kevin

AU - Martin, Robert

AU - Edwards, Paul

AU - Pereira, S.

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