InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Paulo Hisao Moriya, Riccardo Casula, Daniele C. Parrotta, George A. Chappell, Sanna Ranta, Hermann Kahle, Mircea Guina, Jennifer E. Hastie

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

We report low noise, sub-kHz linewidth operation of a compact AlGaInP-based vertical-external-cavity surface-emitting laser (VECSEL), designed for InGaN-diode-pumping at 44X nm. We achieve 150 mW at 689 nm, suitable for cooling neutral Strontium optical clocks.
Original languageEnglish
Title of host publicationOSA Technical Digest
Subtitle of host publicationOptical Society of America, 2020
Place of PublicationWashington, D.C.
PublisherOptical Society of America
Number of pages2
ISBN (Print)978-1-943580-80-4
DOIs
Publication statusPublished - 17 Sep 2020
Event2020 OSA Frontiers in Optics and Laser Science - Virtual event, United States
Duration: 14 Sep 2020 → 17 Sep 2020
http://www.frontiersinoptics.com

Conference

Conference2020 OSA Frontiers in Optics and Laser Science
Abbreviated titleFiO + LS 2020
CountryUnited States
Period14/09/20 → 17/09/20
Internet address

Keywords

  • InGaN-diode-pumped
  • AIGaInP
  • VESCEL
  • sub-kHz linewidth
  • strontium
  • optical clocks

Access to Document

Fingerprint Dive into the research topics of 'InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm'. Together they form a unique fingerprint.

Cite this