InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Paulo H. Moriya; Riccardo Casula; George A. Chappell; Daniele C. Parrotta; Sanna Ranta; Hermann Kahle; Mircea Guina; Jennifer E. Hastie

doi:10.1364/OE.416210

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Paulo H. Moriya, Riccardo Casula, George A. Chappell, Daniele C. Parrotta, Sanna Ranta, Hermann Kahle, Mircea Guina, Jennifer E. Hastie

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

Original language	English
Pages (from-to)	3258-3268
Number of pages	11
Journal	Optics Express
Volume	29
Issue number	3
Early online date	19 Jan 2021
DOIs	https://doi.org/10.1364/OE.416210
Publication status	Published - 1 Feb 2021

Keywords

quantum technology
cold atoms
AlGaInP laser diode

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10.1364/OE.416210Licence: CC BY 4.0

Moriya-etal-OE-2021-InGaN-diode-pumped-AlGaInP-VECSEL-with-sub-kHz-linewidthFinal published version, 8.23 MBLicence: CC BY 4.0

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UK National Quantum Technology Hub in Sensors and Timing
Hastie, J., Riis, E., Arnold, A., Griffin, P., Hastie, J. & Riis, E.
EPSRC (Engineering and Physical Sciences Research Council)
1/12/19 → 30/11/24
Project: Research
UK Quantum Technology Hub for Sensors and Metrology
Hastie, J., Arnold, A., Griffin, P., Kemp, A. & Riis, E.
EPSRC (Engineering and Physical Sciences Research Council)
1/12/14 → 30/11/19
Project: Research
Ultra-Precision Optical Engineering With Short-Wavelength Semiconductor Disk Laser Technology (Challenging Engineering)
Hastie, J.
EPSRC (Engineering and Physical Sciences Research Council)
1/05/11 → 30/04/16
Project: Research

Data for: "InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm"
Moriya, P. (Creator), Casula, R. (Creator), Chappell, G. (Creator), Parrotta, D. C. (Creator), Ranta, S. (Creator), Kahle, H. (Creator), Guina, M. (Creator) & Hastie, J. (Creator), University of Strathclyde, 5 Jan 2021
DOI: 10.15129/c5a45a9b-cfd9-45b2-bf94-96145cc7cef4
Dataset

1 Conference contribution book

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm
Moriya, P. H., Casula, R., Parrotta, D. C., Chappell, G. A., Ranta, S., Kahle, H., Guina, M. & Hastie, J. E., 17 Sep 2020, OSA Technical Digest: Optical Society of America, 2020. Washington, D.C.: Optical Society of America, 2 p. FW7F.2
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Cite this

@article{c62ccabe0a1f41e1bd2fcee75fd9fb8d,

title = "InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm",

abstract = "We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.",

keywords = "quantum technology, cold atoms, AlGaInP laser diode",

author = "Moriya, {Paulo H.} and Riccardo Casula and Chappell, {George A.} and Parrotta, {Daniele C.} and Sanna Ranta and Hermann Kahle and Mircea Guina and Hastie, {Jennifer E.}",

year = "2021",

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doi = "10.1364/OE.416210",

language = "English",

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T1 - InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

AU - Moriya, Paulo H.

AU - Casula, Riccardo

AU - Chappell, George A.

AU - Parrotta, Daniele C.

AU - Ranta, Sanna

AU - Kahle, Hermann

AU - Guina, Mircea

AU - Hastie, Jennifer E.

PY - 2021/2/1

Y1 - 2021/2/1

N2 - We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

AB - We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

KW - quantum technology

KW - cold atoms

KW - AlGaInP laser diode

U2 - 10.1364/OE.416210

DO - 10.1364/OE.416210

M3 - Article

VL - 29

SP - 3258

EP - 3268

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 3

ER -

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Abstract

Keywords

Access to Document

UK National Quantum Technology Hub in Sensors and Timing

UK Quantum Technology Hub for Sensors and Metrology

Ultra-Precision Optical Engineering With Short-Wavelength Semiconductor Disk Laser Technology (Challenging Engineering)

Data for: "InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm"

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Cite this