InGaAs-QW VECSEL emitting >1300nm via intracavity Raman conversion

Daniele C. Parrotta, Riccardo Casula, Jussi-Pekka Penttinen, Tomi Leinonen, Alan J. Kemp, Mircea Guina, Jennifer E. Hastie

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Abstract

We report intracavity Raman conversion of a long-wavelength InGaAs-QW VECSEL to ~1320 nm, the longest wavelength yet achieved by a VECSEL-pumped Raman laser. The setup consisted of a VECSEL capable of emitting >17W at 1180nm and tunable from 1141-1203nm and a 30-mm-long KGd(WO4)2 (KGW) Raman crystal in a coupled-cavity Raman resonator. The Raman cavity was separated from the VECSEL resonator by a tilted dichroic mirror, which steers the Raman beam to an output coupler external to the VECSEL. The spectral emission of the VECSEL, and consequently of the Raman laser, was set by a 4-mm-thick quartz birefringent filter in the VECSEL cavity. The KGW Raman laser was capable of emitting 2.5W at 1315 nm, with M2~2.7 and >4% diode-to-Stokes conversion efficiency. The Raman laser emission was tunable from 1295-1340 nm, limited by the free spectral range of the birefringent filter. Spectral broadening of the fundamental emission was observed during Raman conversion. At the maximum Raman laser output power, the total linewidth of the VECSEL spectrum was ~0:7nm FWHM. As a consequence, the Raman laser emission was also relatively broad (~0.9nm FWHM). Narrow (<0.2nm FWHM) Raman emission was obtained by inserting an additional 100 µm etalon within the VECSEL cavity. With this configuration the fundamental intracavity power clamped at its value at the Raman threshold, suggesting an enhanced effective Raman gain, but the maximum output power of the Raman laser was 1.8 W.
Original languageEnglish
Article number97340O
Number of pages7
JournalProceedings of SPIE
Volume9734
DOIs
Publication statusPublished - 10 Mar 2016

Keywords

  • optically pumped semiconductor laser
  • Raman laser
  • tuning
  • VECSEL

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