InGaAs-QW VECSEL emitting >1300nm via intracavity Raman conversion

Daniele C. Parrotta, Riccardo Casula, Jussi-Pekka Penttinen, Tomi Leinonen, Alan J. Kemp, Mircea Guina, Jennifer E. Hastie

Research output: Contribution to journalArticle

4 Citations (Scopus)
134 Downloads (Pure)

Abstract

We report intracavity Raman conversion of a long-wavelength InGaAs-QW VECSEL to ~1320 nm, the longest wavelength yet achieved by a VECSEL-pumped Raman laser. The setup consisted of a VECSEL capable of emitting >17W at 1180nm and tunable from 1141-1203nm and a 30-mm-long KGd(WO4)2 (KGW) Raman crystal in a coupled-cavity Raman resonator. The Raman cavity was separated from the VECSEL resonator by a tilted dichroic mirror, which steers the Raman beam to an output coupler external to the VECSEL. The spectral emission of the VECSEL, and consequently of the Raman laser, was set by a 4-mm-thick quartz birefringent filter in the VECSEL cavity. The KGW Raman laser was capable of emitting 2.5W at 1315 nm, with M2~2.7 and >4% diode-to-Stokes conversion efficiency. The Raman laser emission was tunable from 1295-1340 nm, limited by the free spectral range of the birefringent filter. Spectral broadening of the fundamental emission was observed during Raman conversion. At the maximum Raman laser output power, the total linewidth of the VECSEL spectrum was ~0:7nm FWHM. As a consequence, the Raman laser emission was also relatively broad (~0.9nm FWHM). Narrow (<0.2nm FWHM) Raman emission was obtained by inserting an additional 100 µm etalon within the VECSEL cavity. With this configuration the fundamental intracavity power clamped at its value at the Raman threshold, suggesting an enhanced effective Raman gain, but the maximum output power of the Raman laser was 1.8 W.
Original languageEnglish
Article number97340O
Number of pages7
JournalProceedings of SPIE
Volume9734
DOIs
Publication statusPublished - 10 Mar 2016

Fingerprint

InGaAs
Raman lasers
Raman
Lasers
Full width at half maximum
birefringent filters
cavities
Laser
Resonators
resonators
Cavity
Wavelength
spectral emission
Quartz
output
laser outputs
wavelengths
Linewidth
couplers
Conversion efficiency

Keywords

  • optically pumped semiconductor laser
  • Raman laser
  • tuning
  • VECSEL

Cite this

Parrotta, Daniele C. ; Casula, Riccardo ; Penttinen, Jussi-Pekka ; Leinonen, Tomi ; Kemp, Alan J. ; Guina, Mircea ; Hastie, Jennifer E. / InGaAs-QW VECSEL emitting >1300nm via intracavity Raman conversion. In: Proceedings of SPIE. 2016 ; Vol. 9734.
@article{4a4de2ab15c2488b9325d94d8db3927b,
title = "InGaAs-QW VECSEL emitting >1300nm via intracavity Raman conversion",
abstract = "We report intracavity Raman conversion of a long-wavelength InGaAs-QW VECSEL to ~1320 nm, the longest wavelength yet achieved by a VECSEL-pumped Raman laser. The setup consisted of a VECSEL capable of emitting >17W at 1180nm and tunable from 1141-1203nm and a 30-mm-long KGd(WO4)2 (KGW) Raman crystal in a coupled-cavity Raman resonator. The Raman cavity was separated from the VECSEL resonator by a tilted dichroic mirror, which steers the Raman beam to an output coupler external to the VECSEL. The spectral emission of the VECSEL, and consequently of the Raman laser, was set by a 4-mm-thick quartz birefringent filter in the VECSEL cavity. The KGW Raman laser was capable of emitting 2.5W at 1315 nm, with M2~2.7 and >4{\%} diode-to-Stokes conversion efficiency. The Raman laser emission was tunable from 1295-1340 nm, limited by the free spectral range of the birefringent filter. Spectral broadening of the fundamental emission was observed during Raman conversion. At the maximum Raman laser output power, the total linewidth of the VECSEL spectrum was ~0:7nm FWHM. As a consequence, the Raman laser emission was also relatively broad (~0.9nm FWHM). Narrow (<0.2nm FWHM) Raman emission was obtained by inserting an additional 100 µm etalon within the VECSEL cavity. With this configuration the fundamental intracavity power clamped at its value at the Raman threshold, suggesting an enhanced effective Raman gain, but the maximum output power of the Raman laser was 1.8 W.",
keywords = "optically pumped semiconductor laser, Raman laser, tuning, VECSEL",
author = "Parrotta, {Daniele C.} and Riccardo Casula and Jussi-Pekka Penttinen and Tomi Leinonen and Kemp, {Alan J.} and Mircea Guina and Hastie, {Jennifer E.}",
note = "Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.",
year = "2016",
month = "3",
day = "10",
doi = "10.1117/12.2217593",
language = "English",
volume = "9734",
journal = "Proceedings of SPIE",
issn = "0277-786X",

}

InGaAs-QW VECSEL emitting >1300nm via intracavity Raman conversion. / Parrotta, Daniele C.; Casula, Riccardo; Penttinen, Jussi-Pekka; Leinonen, Tomi; Kemp, Alan J.; Guina, Mircea; Hastie, Jennifer E.

In: Proceedings of SPIE, Vol. 9734, 97340O, 10.03.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - InGaAs-QW VECSEL emitting >1300nm via intracavity Raman conversion

AU - Parrotta, Daniele C.

AU - Casula, Riccardo

AU - Penttinen, Jussi-Pekka

AU - Leinonen, Tomi

AU - Kemp, Alan J.

AU - Guina, Mircea

AU - Hastie, Jennifer E.

N1 - Copyright 2016 Society of Photo Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2016/3/10

Y1 - 2016/3/10

N2 - We report intracavity Raman conversion of a long-wavelength InGaAs-QW VECSEL to ~1320 nm, the longest wavelength yet achieved by a VECSEL-pumped Raman laser. The setup consisted of a VECSEL capable of emitting >17W at 1180nm and tunable from 1141-1203nm and a 30-mm-long KGd(WO4)2 (KGW) Raman crystal in a coupled-cavity Raman resonator. The Raman cavity was separated from the VECSEL resonator by a tilted dichroic mirror, which steers the Raman beam to an output coupler external to the VECSEL. The spectral emission of the VECSEL, and consequently of the Raman laser, was set by a 4-mm-thick quartz birefringent filter in the VECSEL cavity. The KGW Raman laser was capable of emitting 2.5W at 1315 nm, with M2~2.7 and >4% diode-to-Stokes conversion efficiency. The Raman laser emission was tunable from 1295-1340 nm, limited by the free spectral range of the birefringent filter. Spectral broadening of the fundamental emission was observed during Raman conversion. At the maximum Raman laser output power, the total linewidth of the VECSEL spectrum was ~0:7nm FWHM. As a consequence, the Raman laser emission was also relatively broad (~0.9nm FWHM). Narrow (<0.2nm FWHM) Raman emission was obtained by inserting an additional 100 µm etalon within the VECSEL cavity. With this configuration the fundamental intracavity power clamped at its value at the Raman threshold, suggesting an enhanced effective Raman gain, but the maximum output power of the Raman laser was 1.8 W.

AB - We report intracavity Raman conversion of a long-wavelength InGaAs-QW VECSEL to ~1320 nm, the longest wavelength yet achieved by a VECSEL-pumped Raman laser. The setup consisted of a VECSEL capable of emitting >17W at 1180nm and tunable from 1141-1203nm and a 30-mm-long KGd(WO4)2 (KGW) Raman crystal in a coupled-cavity Raman resonator. The Raman cavity was separated from the VECSEL resonator by a tilted dichroic mirror, which steers the Raman beam to an output coupler external to the VECSEL. The spectral emission of the VECSEL, and consequently of the Raman laser, was set by a 4-mm-thick quartz birefringent filter in the VECSEL cavity. The KGW Raman laser was capable of emitting 2.5W at 1315 nm, with M2~2.7 and >4% diode-to-Stokes conversion efficiency. The Raman laser emission was tunable from 1295-1340 nm, limited by the free spectral range of the birefringent filter. Spectral broadening of the fundamental emission was observed during Raman conversion. At the maximum Raman laser output power, the total linewidth of the VECSEL spectrum was ~0:7nm FWHM. As a consequence, the Raman laser emission was also relatively broad (~0.9nm FWHM). Narrow (<0.2nm FWHM) Raman emission was obtained by inserting an additional 100 µm etalon within the VECSEL cavity. With this configuration the fundamental intracavity power clamped at its value at the Raman threshold, suggesting an enhanced effective Raman gain, but the maximum output power of the Raman laser was 1.8 W.

KW - optically pumped semiconductor laser

KW - Raman laser

KW - tuning

KW - VECSEL

U2 - 10.1117/12.2217593

DO - 10.1117/12.2217593

M3 - Article

VL - 9734

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

M1 - 97340O

ER -

Parrotta DC, Casula R, Penttinen J-P, Leinonen T, Kemp AJ, Guina M et al. InGaAs-QW VECSEL emitting >1300nm via intracavity Raman conversion. Proceedings of SPIE. 2016 Mar 10;9734. 97340O. https://doi.org/10.1117/12.2217593