Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

A.V. Mudryi; M.V. Yakushev; V.A. Volkov; V.D. Zhivulko; O.M. Borodavchenko; R.W. Martin

doi:10.1016/j.jlumin.2017.02.014

Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

A.V. Mudryi, M.V. Yakushev, V.A. Volkov, V.D. Zhivulko, O.M. Borodavchenko, R.W. Martin

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Abstract

A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.

Original language	English
Pages (from-to)	123-126
Number of pages	4
Journal	Journal of Luminescence
Volume	186
Early online date	11 Feb 2017
DOIs	https://doi.org/10.1016/j.jlumin.2017.02.014
Publication status	Published - 30 Jun 2017

Keywords

photoluminescence
CuInS2
excitons
traveling heater
chemical vapor transport
chalcopyrite semiconductor
growth method

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10.1016/j.jlumin.2017.02.014

Mudryi-etal-JL-2017-Photoluminescence-spectra-and-electronic-properties-of-CuInS2-single-crystalsAccepted author manuscript, 452 KBLicence: CC BY-NC-ND 4.0

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@article{f68665716f0f47b9995ca9568a9c4f60,

title = "Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals",

abstract = "A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.",

keywords = "photoluminescence, CuInS2, excitons, traveling heater, chemical vapor transport, chalcopyrite semiconductor, growth method",

author = "A.V. Mudryi and M.V. Yakushev and V.A. Volkov and V.D. Zhivulko and O.M. Borodavchenko and R.W. Martin",

year = "2017",

month = jun,

day = "30",

doi = "10.1016/j.jlumin.2017.02.014",

language = "English",

volume = "186",

pages = "123--126",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

AU - Mudryi, A.V.

AU - Yakushev, M.V.

AU - Volkov, V.A.

AU - Zhivulko, V.D.

AU - Borodavchenko, O.M.

AU - Martin, R.W.

PY - 2017/6/30

Y1 - 2017/6/30

N2 - A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.

AB - A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.

KW - photoluminescence

KW - CuInS2

KW - excitons

KW - traveling heater

KW - chemical vapor transport

KW - chalcopyrite semiconductor

KW - growth method

U2 - 10.1016/j.jlumin.2017.02.014

DO - 10.1016/j.jlumin.2017.02.014

M3 - Article

SN - 0022-2313

VL - 186

SP - 123

EP - 126

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

Abstract

Keywords

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