Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

A.V. Mudryi, M.V. Yakushev, V.A. Volkov, V.D. Zhivulko, O.M. Borodavchenko, R.W. Martin

Research output: Contribution to journalArticle

4 Citations (Scopus)
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Abstract

A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.
Original languageEnglish
Pages (from-to)123-126
Number of pages4
JournalJournal of Luminescence
Volume186
Early online date11 Feb 2017
DOIs
Publication statusPublished - 30 Jun 2017

Keywords

  • photoluminescence
  • CuInS2
  • excitons
  • traveling heater
  • chemical vapor transport
  • chalcopyrite semiconductor
  • growth method

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