Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

A.V. Mudryi, M.V. Yakushev, V.A. Volkov, V.D. Zhivulko, O.M. Borodavchenko, R.W. Martin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.
LanguageEnglish
Pages123-126
Number of pages4
JournalJournal of Luminescence
Volume186
Early online date11 Feb 2017
DOIs
Publication statusPublished - 30 Jun 2017

Fingerprint

Electronic properties
Photoluminescence
Vapors
excitons
Single crystals
vapors
photoluminescence
single crystals
Growth
Binding energy
electronics
heaters
Excited states
Ground state
Energy gap
Permittivity
binding energy
permittivity
Crystals
radii

Keywords

  • photoluminescence
  • CuInS2
  • excitons
  • traveling heater
  • chemical vapor transport
  • chalcopyrite semiconductor
  • growth method

Cite this

Mudryi, A.V. ; Yakushev, M.V. ; Volkov, V.A. ; Zhivulko, V.D. ; Borodavchenko, O.M. ; Martin, R.W. / Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals. In: Journal of Luminescence. 2017 ; Vol. 186. pp. 123-126.
@article{f68665716f0f47b9995ca9568a9c4f60,
title = "Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals",
abstract = "A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.",
keywords = "photoluminescence, CuInS2, excitons, traveling heater, chemical vapor transport, chalcopyrite semiconductor, growth method",
author = "A.V. Mudryi and M.V. Yakushev and V.A. Volkov and V.D. Zhivulko and O.M. Borodavchenko and R.W. Martin",
year = "2017",
month = "6",
day = "30",
doi = "10.1016/j.jlumin.2017.02.014",
language = "English",
volume = "186",
pages = "123--126",
journal = "Journal of Luminescence",
issn = "0022-2313",

}

Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals. / Mudryi, A.V.; Yakushev, M.V.; Volkov, V.A.; Zhivulko, V.D.; Borodavchenko, O.M.; Martin, R.W.

In: Journal of Luminescence, Vol. 186, 30.06.2017, p. 123-126.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals

AU - Mudryi, A.V.

AU - Yakushev, M.V.

AU - Volkov, V.A.

AU - Zhivulko, V.D.

AU - Borodavchenko, O.M.

AU - Martin, R.W.

PY - 2017/6/30

Y1 - 2017/6/30

N2 - A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.

AB - A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively.

KW - photoluminescence

KW - CuInS2

KW - excitons

KW - traveling heater

KW - chemical vapor transport

KW - chalcopyrite semiconductor

KW - growth method

U2 - 10.1016/j.jlumin.2017.02.014

DO - 10.1016/j.jlumin.2017.02.014

M3 - Article

VL - 186

SP - 123

EP - 126

JO - Journal of Luminescence

T2 - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

ER -