Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN

K. Lorenz, E. Nogales, R. Nédélec, J. Penner, R. Vianden, E. Alves, R. W. Martin, K. P. O'Donnell

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

2 Citations (Scopus)

Abstract

GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200°C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000°C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3+N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200°C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

LanguageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Place of PublicationWarrendale, Pa.
Pages611-616
Number of pages6
Volume892
Publication statusPublished - 15 May 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: 28 Nov 20052 Dec 2005

Conference

Conference2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period28/11/052/12/05

Fingerprint

Cathodoluminescence
Rare earths
Structural properties
rare earth elements
Optical properties
Annealing
optical properties
annealing
cathodoluminescence
Vacuum
Recovery
Rapid thermal annealing
Rutherford backscattering spectroscopy
Spectrometry
Surface morphology
Nitrogen
Gases
recovery
Ions
Temperature

Keywords

  • GaN layers
  • rare earth alloys
  • cathodoluminescence imaging

Cite this

Lorenz, K., Nogales, E., Nédélec, R., Penner, J., Vianden, R., Alves, E., ... O'Donnell, K. P. (2006). Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN. In Materials Research Society Symposium Proceedings (Vol. 892, pp. 611-616). Warrendale, Pa..
Lorenz, K. ; Nogales, E. ; Nédélec, R. ; Penner, J. ; Vianden, R. ; Alves, E. ; Martin, R. W. ; O'Donnell, K. P. / Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN. Materials Research Society Symposium Proceedings. Vol. 892 Warrendale, Pa., 2006. pp. 611-616
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Lorenz, K, Nogales, E, Nédélec, R, Penner, J, Vianden, R, Alves, E, Martin, RW & O'Donnell, KP 2006, Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN. in Materials Research Society Symposium Proceedings. vol. 892, Warrendale, Pa., pp. 611-616, 2005 Materials Research Society Fall Meeting, Boston, MA, United States, 28/11/05.

Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN. / Lorenz, K.; Nogales, E.; Nédélec, R.; Penner, J.; Vianden, R.; Alves, E.; Martin, R. W.; O'Donnell, K. P.

Materials Research Society Symposium Proceedings. Vol. 892 Warrendale, Pa., 2006. p. 611-616.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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AU - Nédélec, R.

AU - Penner, J.

AU - Vianden, R.

AU - Alves, E.

AU - Martin, R. W.

AU - O'Donnell, K. P.

PY - 2006/5/15

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N2 - GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200°C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000°C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3+N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200°C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

AB - GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200°C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000°C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3+N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200°C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

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Lorenz K, Nogales E, Nédélec R, Penner J, Vianden R, Alves E et al. Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN. In Materials Research Society Symposium Proceedings. Vol. 892. Warrendale, Pa. 2006. p. 611-616