Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN

K. Lorenz; E. Nogales; R. Nédélec; J. Penner; R. Vianden; E. Alves; R. W. Martin; K. P. O'Donnell

Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN

K. Lorenz^*, E. Nogales, R. Nédélec, J. Penner, R. Vianden, E. Alves, R. W. Martin, K. P. O'Donnell

^*Corresponding author for this work

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

2 Citations (Scopus)

Abstract

GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200°C in vacuum, in flowing nitrogen gas or a mixture of NH₃ and N₂. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N₂ already show the first signs of surface dissociation at 1000°C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH₃+N₂ exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200°C in NH₃+N₂ the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Place of Publication	Warrendale, Pa.
Pages	611-616
Number of pages	6
Volume	892
Publication status	Published - 15 May 2006
Event	2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: 28 Nov 2005 → 2 Dec 2005

Conference

Conference	2005 Materials Research Society Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	28/11/05 → 2/12/05

Keywords

GaN layers
rare earth alloys
cathodoluminescence imaging

Cite this

@inproceedings{b79a4da1443e4e809e00df84f8c81eab,

title = "Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN",

abstract = "GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200°C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000°C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3+N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200°C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.",

keywords = "GaN layers, rare earth alloys, cathodoluminescence imaging",

author = "K. Lorenz and E. Nogales and R. N{\'e}d{\'e}lec and J. Penner and R. Vianden and E. Alves and Martin, {R. W.} and O'Donnell, {K. P.}",

year = "2006",

month = may,

day = "15",

language = "English",

isbn = "1558998462",

volume = "892",

pages = "611--616",

booktitle = "Materials Research Society Symposium Proceedings",

note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",

}

Lorenz, K, Nogales, E, Nédélec, R, Penner, J, Vianden, R, Alves, E, Martin, RW & O'Donnell, KP 2006, Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN. in Materials Research Society Symposium Proceedings. vol. 892, Warrendale, Pa., pp. 611-616, 2005 Materials Research Society Fall Meeting, Boston, MA, United States, 28/11/05.

TY - GEN

T1 - Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN

AU - Lorenz, K.

AU - Nogales, E.

AU - Nédélec, R.

AU - Penner, J.

AU - Vianden, R.

AU - Alves, E.

AU - Martin, R. W.

AU - O'Donnell, K. P.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200°C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000°C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3+N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200°C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

AB - GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200°C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000°C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3+N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200°C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

KW - GaN layers

KW - rare earth alloys

KW - cathodoluminescence imaging

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M3 - Conference contribution book

AN - SCOPUS:33646428653

SN - 1558998462

SN - 9781558998469

VL - 892

SP - 611

EP - 616

BT - Materials Research Society Symposium Proceedings

CY - Warrendale, Pa.

T2 - 2005 Materials Research Society Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN

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