Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

A. Othonos; G. Itskos; D.D.C. Bradley; M.D. Dawson; I.M. Watson

doi:10.1063/1.3139079

Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

A. Othonos, G. Itskos, D.D.C. Bradley, M.D. Dawson, I.M. Watson

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.

Original language	English
Pages (from-to)	203102-1-203102-3
Journal	Applied Physics Letters
Volume	94
Issue number	20
DOIs	https://doi.org/10.1063/1.3139079
Publication status	Published - 18 May 2009

Keywords

carrier relaxation time
excited states
gallium compounds
ground states
III-V semiconductors
indium compounds
photoluminescence
semiconductor quantum wells
surface states
wide band gap semiconductors

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10.1063/1.3139079

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@article{76a3da0d20da48f991ca840b69097a34,

title = "Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells",

abstract = "We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.",

keywords = "carrier relaxation time, excited states, gallium compounds, ground states, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum wells, surface states, wide band gap semiconductors",

author = "A. Othonos and G. Itskos and D.D.C. Bradley and M.D. Dawson and I.M. Watson",

year = "2009",

month = may,

day = "18",

doi = "10.1063/1.3139079",

language = "English",

volume = "94",

pages = "203102--1--203102--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "20",

}

TY - JOUR

T1 - Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

AU - Othonos, A.

AU - Itskos, G.

AU - Bradley, D.D.C.

AU - Dawson, M.D.

AU - Watson, I.M.

PY - 2009/5/18

Y1 - 2009/5/18

N2 - We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.

AB - We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.

KW - carrier relaxation time

KW - excited states

KW - gallium compounds

KW - ground states

KW - III-V semiconductors

KW - indium compounds

KW - photoluminescence

KW - semiconductor quantum wells

KW - surface states

KW - wide band gap semiconductors

UR - http://dx.doi.org/10.1063/1.3139079

U2 - 10.1063/1.3139079

DO - 10.1063/1.3139079

M3 - Article

SN - 0003-6951

VL - 94

SP - 203102-1-203102-3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

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Keywords

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Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices

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Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

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Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices

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