Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

A. Othonos, G. Itskos, D.D.C. Bradley, M.D. Dawson, I.M. Watson

Research output: Contribution to journalArticle

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Abstract

We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.
LanguageEnglish
Pages203102-1-203102-3
JournalApplied Physics Letters
Volume94
Issue number20
DOIs
Publication statusPublished - 18 May 2009

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quantum wells
caps
excitation
proximity
pumps
photoluminescence
ground state
probes
decay

Keywords

  • carrier relaxation time
  • excited states
  • gallium compounds
  • ground states
  • III-V semiconductors
  • indium compounds
  • photoluminescence
  • semiconductor quantum wells
  • surface states
  • wide band gap semiconductors

Cite this

@article{76a3da0d20da48f991ca840b69097a34,
title = "Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells",
abstract = "We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.",
keywords = "carrier relaxation time, excited states, gallium compounds, ground states, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum wells, surface states, wide band gap semiconductors",
author = "A. Othonos and G. Itskos and D.D.C. Bradley and M.D. Dawson and I.M. Watson",
year = "2009",
month = "5",
day = "18",
doi = "10.1063/1.3139079",
language = "English",
volume = "94",
pages = "203102--1--203102--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "20",

}

Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells. / Othonos, A.; Itskos, G.; Bradley, D.D.C.; Dawson, M.D.; Watson, I.M.

In: Applied Physics Letters, Vol. 94, No. 20, 18.05.2009, p. 203102-1-203102-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

AU - Othonos, A.

AU - Itskos, G.

AU - Bradley, D.D.C.

AU - Dawson, M.D.

AU - Watson, I.M.

PY - 2009/5/18

Y1 - 2009/5/18

N2 - We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.

AB - We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.

KW - carrier relaxation time

KW - excited states

KW - gallium compounds

KW - ground states

KW - III-V semiconductors

KW - indium compounds

KW - photoluminescence

KW - semiconductor quantum wells

KW - surface states

KW - wide band gap semiconductors

UR - http://dx.doi.org/10.1063/1.3139079

U2 - 10.1063/1.3139079

DO - 10.1063/1.3139079

M3 - Article

VL - 94

SP - 203102-1-203102-3

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -