Abstract
| Language | English |
|---|---|
| Pages | 203102-1-203102-3 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 18 May 2009 |
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Keywords
- carrier relaxation time
- excited states
- gallium compounds
- ground states
- III-V semiconductors
- indium compounds
- photoluminescence
- semiconductor quantum wells
- surface states
- wide band gap semiconductors
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Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells. / Othonos, A.; Itskos, G.; Bradley, D.D.C.; Dawson, M.D.; Watson, I.M.
In: Applied Physics Letters, Vol. 94, No. 20, 18.05.2009, p. 203102-1-203102-3.Research output: Contribution to journal › Article
TY - JOUR
T1 - Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells
AU - Othonos, A.
AU - Itskos, G.
AU - Bradley, D.D.C.
AU - Dawson, M.D.
AU - Watson, I.M.
PY - 2009/5/18
Y1 - 2009/5/18
N2 - We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.
AB - We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.
KW - carrier relaxation time
KW - excited states
KW - gallium compounds
KW - ground states
KW - III-V semiconductors
KW - indium compounds
KW - photoluminescence
KW - semiconductor quantum wells
KW - surface states
KW - wide band gap semiconductors
UR - http://dx.doi.org/10.1063/1.3139079
U2 - 10.1063/1.3139079
DO - 10.1063/1.3139079
M3 - Article
VL - 94
SP - 203102-1-203102-3
JO - Applied Physics Letters
T2 - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 20
ER -