Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

Gunnar Kusch, Haoning Li, Paul R. Edwards, Jochen Bruckbauer, Thomas C. Sadler, Peter J. Parbrook, Robert W. Martin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The influence of substrate miscut on Al0.5Ga0.5 N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.
LanguageEnglish
Article number092114
Number of pages4
JournalApplied Physics Letters
Volume104
Issue number9
DOIs
Publication statusPublished - 3 Mar 2014

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luminescence
cathodoluminescence
inhomogeneity
cracks
electron microscopes
atomic force microscopy
scanning
shift
high resolution
diffraction
electrons
x rays
energy

Keywords

  • cathodoluminescence
  • III-V semiconductors
  • surface morphology
  • X-ray diffraction

Cite this

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title = "Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN",
abstract = "The influence of substrate miscut on Al0.5Ga0.5 N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.",
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Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN. / Kusch, Gunnar; Li, Haoning; Edwards, Paul R.; Bruckbauer, Jochen; Sadler, Thomas C.; Parbrook, Peter J.; Martin, Robert W.

In: Applied Physics Letters, Vol. 104, No. 9, 092114 , 03.03.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

AU - Kusch, Gunnar

AU - Li, Haoning

AU - Edwards, Paul R.

AU - Bruckbauer, Jochen

AU - Sadler, Thomas C.

AU - Parbrook, Peter J.

AU - Martin, Robert W.

PY - 2014/3/3

Y1 - 2014/3/3

N2 - The influence of substrate miscut on Al0.5Ga0.5 N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.

AB - The influence of substrate miscut on Al0.5Ga0.5 N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed.

KW - cathodoluminescence

KW - III-V semiconductors

KW - surface morphology

KW - X-ray diffraction

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T2 - Applied Physics Letters

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