Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures

H.D. Sun; A.H. Clark; S. Calvez; M.D. Dawson; K.S. Kim; T. Kim; Y.J. Park

doi:10.1109/ICIPRM.2005.1517466

Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, K.S. Kim, T. Kim, Y.J. Park

Research output: Contribution to conference › Paper

Abstract

In summary, we have investigated the dependence of the optical properties of GaInNAs QWs grown by MOVPE on GaNAs SCLs and InGaAs SMLs. Introduction of only SCLs between the GaAs and GaInNAs QW deteriorates the epitaxial quality of the QW due to the increased stress between tensile-strained GaNAs and compressive-strained GaInNAs. This detrimental effect of the interface can be countered by the insertion of a layer of InGaAs. Contrary to what observed in MBE, MOVPE-grown GaInNAs QW with combined SCLs/SMLs demonstrated blue-shifted PL due to the decrease N content with improved QW quality.

Original language	English
Pages	237-238
Number of pages	2
DOIs	https://doi.org/10.1109/ICIPRM.2005.1517466
Publication status	Published - May 2005
Event	International Conference on Indium Phosphide and Related Materials - Glasgow, United Kingdom Duration: 8 May 2005 → 12 May 2005

Conference

Conference	International Conference on Indium Phosphide and Related Materials
Country/Territory	United Kingdom
City	Glasgow
Period	8/05/05 → 12/05/05

Keywords

influence
strain-compensating
strain-mediating
layers
optical properties
MOVPE-grown GaInNAs
single quantum-well structures

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10.1109/ICIPRM.2005.1517466

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Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Kim, K. S., Kim, T., & Park, Y. J. (2005). Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures. 237-238. Paper presented at International Conference on Indium Phosphide and Related Materials, Glasgow, United Kingdom. https://doi.org/10.1109/ICIPRM.2005.1517466

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title = "Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures",

abstract = "In summary, we have investigated the dependence of the optical properties of GaInNAs QWs grown by MOVPE on GaNAs SCLs and InGaAs SMLs. Introduction of only SCLs between the GaAs and GaInNAs QW deteriorates the epitaxial quality of the QW due to the increased stress between tensile-strained GaNAs and compressive-strained GaInNAs. This detrimental effect of the interface can be countered by the insertion of a layer of InGaAs. Contrary to what observed in MBE, MOVPE-grown GaInNAs QW with combined SCLs/SMLs demonstrated blue-shifted PL due to the decrease N content with improved QW quality. ",

keywords = "influence, strain-compensating, strain-mediating, layers, optical properties , MOVPE-grown GaInNAs , single quantum-well structures ",

author = "H.D. Sun and A.H. Clark and S. Calvez and M.D. Dawson and K.S. Kim and T. Kim and Y.J. Park",

year = "2005",

month = may,

doi = "10.1109/ICIPRM.2005.1517466",

language = "English",

pages = "237--238",

note = "International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",

}

Sun, HD, Clark, AH, Calvez, S, Dawson, MD, Kim, KS, Kim, T & Park, YJ 2005, 'Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures', Paper presented at International Conference on Indium Phosphide and Related Materials, Glasgow, United Kingdom, 8/05/05 - 12/05/05 pp. 237-238. https://doi.org/10.1109/ICIPRM.2005.1517466

TY - CONF

T1 - Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures

AU - Sun, H.D.

AU - Clark, A.H.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Kim, K.S.

AU - Kim, T.

AU - Park, Y.J.

PY - 2005/5

Y1 - 2005/5

N2 - In summary, we have investigated the dependence of the optical properties of GaInNAs QWs grown by MOVPE on GaNAs SCLs and InGaAs SMLs. Introduction of only SCLs between the GaAs and GaInNAs QW deteriorates the epitaxial quality of the QW due to the increased stress between tensile-strained GaNAs and compressive-strained GaInNAs. This detrimental effect of the interface can be countered by the insertion of a layer of InGaAs. Contrary to what observed in MBE, MOVPE-grown GaInNAs QW with combined SCLs/SMLs demonstrated blue-shifted PL due to the decrease N content with improved QW quality.

AB - In summary, we have investigated the dependence of the optical properties of GaInNAs QWs grown by MOVPE on GaNAs SCLs and InGaAs SMLs. Introduction of only SCLs between the GaAs and GaInNAs QW deteriorates the epitaxial quality of the QW due to the increased stress between tensile-strained GaNAs and compressive-strained GaInNAs. This detrimental effect of the interface can be countered by the insertion of a layer of InGaAs. Contrary to what observed in MBE, MOVPE-grown GaInNAs QW with combined SCLs/SMLs demonstrated blue-shifted PL due to the decrease N content with improved QW quality.

KW - influence

KW - strain-compensating

KW - strain-mediating

KW - layers

KW - optical properties

KW - MOVPE-grown GaInNAs

KW - single quantum-well structures

U2 - 10.1109/ICIPRM.2005.1517466

DO - 10.1109/ICIPRM.2005.1517466

M3 - Paper

SP - 237

EP - 238

T2 - International Conference on Indium Phosphide and Related Materials

Y2 - 8 May 2005 through 12 May 2005

ER -

Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures

Abstract

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Keywords

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