Abstract
In summary, we have investigated the dependence of the optical properties of GaInNAs QWs grown by MOVPE on GaNAs SCLs and InGaAs SMLs. Introduction of only SCLs between the GaAs and GaInNAs QW deteriorates the epitaxial quality of the QW due to the increased stress between tensile-strained GaNAs and compressive-strained GaInNAs. This detrimental effect of the interface can be countered by the insertion of a layer of InGaAs. Contrary to what observed in MBE, MOVPE-grown GaInNAs QW with combined SCLs/SMLs demonstrated blue-shifted PL due to the decrease N content with improved QW quality.
Original language | English |
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Pages | 237-238 |
Number of pages | 2 |
DOIs | |
Publication status | Published - May 2005 |
Event | International Conference on Indium Phosphide and Related Materials - Glasgow, United Kingdom Duration: 8 May 2005 → 12 May 2005 |
Conference
Conference | International Conference on Indium Phosphide and Related Materials |
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Country/Territory | United Kingdom |
City | Glasgow |
Period | 8/05/05 → 12/05/05 |
Keywords
- influence
- strain-compensating
- strain-mediating
- layers
- optical properties
- MOVPE-grown GaInNAs
- single quantum-well structures