Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

H.D. Sun; M.D. Dawson; M. Othman; J.C.L. Yong; J.M. Rorison; P. Gilet; L. Grenouillet; A. Million

Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

H.D. Sun, M.D. Dawson, M. Othman, J.C.L. Yong, J.M. Rorison, P. Gilet, L. Grenouillet, A. Million

Institute Of Photonics

Research output: Contribution to conference › Paper

Abstract

This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.

Original language	English
Publication status	Unpublished - 2 Aug 2002
Event	26th International Conference on the Physics of Semiconductors - Edinburgh, UK Duration: 29 Jul 2002 → 2 Aug 2002

Conference

Conference	26th International Conference on the Physics of Semiconductors
City	Edinburgh, UK
Period	29/07/02 → 2/08/02

Keywords

nitrogen
electronic structure
gaInNAs
GaAs
multiquantum wells
semiconductors

Cite this

@conference{db182590bc9744489c141be0b11c38f7,

title = "Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation",

abstract = "This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.",

keywords = "nitrogen, electronic structure, gaInNAs, GaAs, multiquantum wells, semiconductors",

author = "H.D. Sun and M.D. Dawson and M. Othman and J.C.L. Yong and J.M. Rorison and P. Gilet and L. Grenouillet and A. Million",

year = "2002",

month = aug,

day = "2",

language = "English",

note = "26th International Conference on the Physics of Semiconductors ; Conference date: 29-07-2002 Through 02-08-2002",

}

TY - CONF

T1 - Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Othman, M.

AU - Yong, J.C.L.

AU - Rorison, J.M.

AU - Gilet, P.

AU - Grenouillet, L.

AU - Million, A.

PY - 2002/8/2

Y1 - 2002/8/2

N2 - This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.

AB - This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.

KW - nitrogen

KW - electronic structure

KW - gaInNAs

KW - GaAs

KW - multiquantum wells

KW - semiconductors

UR - http://www.iupap.org/commissions/c8/reports/icps-02.html

M3 - Paper

T2 - 26th International Conference on the Physics of Semiconductors

Y2 - 29 July 2002 through 2 August 2002

ER -

Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

Abstract

Conference

Keywords

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