Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

H.D. Sun, M.D. Dawson, M. Othman, J.C.L. Yong, J.M. Rorison, P. Gilet, L. Grenouillet, A. Million

Research output: Contribution to conferencePaper

Abstract

This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.

Conference

Conference26th International Conference on the Physics of Semiconductors
CityEdinburgh, UK
Period29/07/022/08/02

Fingerprint

electronic structure
nitrogen
physics

Keywords

  • nitrogen
  • electronic structure
  • gaInNAs
  • GaAs
  • multiquantum wells
  • semiconductors

Cite this

Sun, H. D., Dawson, M. D., Othman, M., Yong, J. C. L., Rorison, J. M., Gilet, P., ... Million, A. (2002). Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation. Paper presented at 26th International Conference on the Physics of Semiconductors, Edinburgh, UK, .
Sun, H.D. ; Dawson, M.D. ; Othman, M. ; Yong, J.C.L. ; Rorison, J.M. ; Gilet, P. ; Grenouillet, L. ; Million, A. / Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation. Paper presented at 26th International Conference on the Physics of Semiconductors, Edinburgh, UK, .
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title = "Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation",
abstract = "This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.",
keywords = "nitrogen, electronic structure, gaInNAs, GaAs, multiquantum wells, semiconductors",
author = "H.D. Sun and M.D. Dawson and M. Othman and J.C.L. Yong and J.M. Rorison and P. Gilet and L. Grenouillet and A. Million",
year = "2002",
month = "8",
day = "2",
language = "English",
note = "26th International Conference on the Physics of Semiconductors ; Conference date: 29-07-2002 Through 02-08-2002",

}

Sun, HD, Dawson, MD, Othman, M, Yong, JCL, Rorison, JM, Gilet, P, Grenouillet, L & Million, A 2002, 'Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation' Paper presented at 26th International Conference on the Physics of Semiconductors, Edinburgh, UK, 29/07/02 - 2/08/02, .

Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation. / Sun, H.D.; Dawson, M.D.; Othman, M.; Yong, J.C.L.; Rorison, J.M.; Gilet, P.; Grenouillet, L.; Million, A.

2002. Paper presented at 26th International Conference on the Physics of Semiconductors, Edinburgh, UK, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Othman, M.

AU - Yong, J.C.L.

AU - Rorison, J.M.

AU - Gilet, P.

AU - Grenouillet, L.

AU - Million, A.

PY - 2002/8/2

Y1 - 2002/8/2

N2 - This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.

AB - This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.

KW - nitrogen

KW - electronic structure

KW - gaInNAs

KW - GaAs

KW - multiquantum wells

KW - semiconductors

UR - http://www.iupap.org/commissions/c8/reports/icps-02.html

M3 - Paper

ER -

Sun HD, Dawson MD, Othman M, Yong JCL, Rorison JM, Gilet P et al. Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation. 2002. Paper presented at 26th International Conference on the Physics of Semiconductors, Edinburgh, UK, .