Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

H.D. Sun, M.D. Dawson, M. Othman, J.C.L. Yong, J.M. Rorison, P. Gilet, L. Grenouillet, A. Million

Research output: Contribution to conferencePaper

Abstract

This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.
Original languageEnglish
Publication statusUnpublished - 2 Aug 2002
Event26th International Conference on the Physics of Semiconductors - Edinburgh, UK
Duration: 29 Jul 20022 Aug 2002

Conference

Conference26th International Conference on the Physics of Semiconductors
CityEdinburgh, UK
Period29/07/022/08/02

Keywords

  • nitrogen
  • electronic structure
  • gaInNAs
  • GaAs
  • multiquantum wells
  • semiconductors

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    Sun, H. D., Dawson, M. D., Othman, M., Yong, J. C. L., Rorison, J. M., Gilet, P., ... Million, A. (2002). Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation. Paper presented at 26th International Conference on the Physics of Semiconductors, Edinburgh, UK, .