Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide

Saurav Goel, Xichun Luo, Alexander Stukowski, Robert L. Reuben

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Silicon carbide (SiC) is a suitable candidate for MEMS, NEMS, optoelectronic andnanotribological applications e.g. airborne laser devices, laser radar systems, vacuumultraviolet (VUV) telescopes and space based laser mirrors. In-depth understanding of the influence of coolant and crystal structure of the work material on the nanometric cutting process of SiC could help in cost saving operations. Therefore, nanoscratching trials were carried out on single crystal 6H-SiC involving four pre-selected coolants to emulate nanometric cutting. A specific coolant was found to improve the cutting conditions tremendously and hence recommended. Moreover, a molecular dynamics (MD) simulation model was developed to simulate nanometric cutting of polycrystalline (PC) 3C-SiC and single crystal (SC) 3C-SiC. Besides explaining the reasons for the ease of machinability of chemically vapour deposited (CVD) 3C-SiC compared to SC-3C-SiC, simulation results also explains why SC-SiC provides a better measure of attainable surface roughness in comparison to CVD-SiC and reaction bonded (RB)-SiC.
LanguageEnglish
Pages299-302
Number of pages4
Publication statusPublished - Jun 2012
Event12th euspen International Conference - Stockholm, Sweden
Duration: 4 Jun 20128 Jun 2012

Conference

Conference12th euspen International Conference
CountrySweden
CityStockholm
Period4/06/128/06/12

Fingerprint

Silicon carbide
Coolants
Crystal structure
Nanoparticles
Single crystals
Laser mirrors
Vapors
NEMS
Machinability
Optical radar
Radar systems
Polysilicon
Telescopes
Optoelectronic devices
MEMS
Molecular dynamics
Surface roughness
Lasers
Computer simulation

Keywords

  • silicon carbide
  • nanoscratching
  • nanometric cutting
  • surface roughness
  • nanoparticle coolants
  • crystal structures

Cite this

Goel, S., Luo, X., Stukowski, A., & Reuben, R. L. (2012). Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide. 299-302. Paper presented at 12th euspen International Conference, Stockholm, Sweden.
Goel, Saurav ; Luo, Xichun ; Stukowski, Alexander ; Reuben, Robert L. / Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide. Paper presented at 12th euspen International Conference, Stockholm, Sweden.4 p.
@conference{0f82bfd757cd435e8b7f5d41fbbcea07,
title = "Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide",
abstract = "Silicon carbide (SiC) is a suitable candidate for MEMS, NEMS, optoelectronic andnanotribological applications e.g. airborne laser devices, laser radar systems, vacuumultraviolet (VUV) telescopes and space based laser mirrors. In-depth understanding of the influence of coolant and crystal structure of the work material on the nanometric cutting process of SiC could help in cost saving operations. Therefore, nanoscratching trials were carried out on single crystal 6H-SiC involving four pre-selected coolants to emulate nanometric cutting. A specific coolant was found to improve the cutting conditions tremendously and hence recommended. Moreover, a molecular dynamics (MD) simulation model was developed to simulate nanometric cutting of polycrystalline (PC) 3C-SiC and single crystal (SC) 3C-SiC. Besides explaining the reasons for the ease of machinability of chemically vapour deposited (CVD) 3C-SiC compared to SC-3C-SiC, simulation results also explains why SC-SiC provides a better measure of attainable surface roughness in comparison to CVD-SiC and reaction bonded (RB)-SiC.",
keywords = "silicon carbide, nanoscratching, nanometric cutting, surface roughness, nanoparticle coolants, crystal structures",
author = "Saurav Goel and Xichun Luo and Alexander Stukowski and Reuben, {Robert L.}",
year = "2012",
month = "6",
language = "English",
pages = "299--302",
note = "12th euspen International Conference ; Conference date: 04-06-2012 Through 08-06-2012",

}

Goel, S, Luo, X, Stukowski, A & Reuben, RL 2012, 'Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide' Paper presented at 12th euspen International Conference, Stockholm, Sweden, 4/06/12 - 8/06/12, pp. 299-302.

Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide. / Goel, Saurav; Luo, Xichun; Stukowski, Alexander; Reuben, Robert L.

2012. 299-302 Paper presented at 12th euspen International Conference, Stockholm, Sweden.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide

AU - Goel, Saurav

AU - Luo, Xichun

AU - Stukowski, Alexander

AU - Reuben, Robert L.

PY - 2012/6

Y1 - 2012/6

N2 - Silicon carbide (SiC) is a suitable candidate for MEMS, NEMS, optoelectronic andnanotribological applications e.g. airborne laser devices, laser radar systems, vacuumultraviolet (VUV) telescopes and space based laser mirrors. In-depth understanding of the influence of coolant and crystal structure of the work material on the nanometric cutting process of SiC could help in cost saving operations. Therefore, nanoscratching trials were carried out on single crystal 6H-SiC involving four pre-selected coolants to emulate nanometric cutting. A specific coolant was found to improve the cutting conditions tremendously and hence recommended. Moreover, a molecular dynamics (MD) simulation model was developed to simulate nanometric cutting of polycrystalline (PC) 3C-SiC and single crystal (SC) 3C-SiC. Besides explaining the reasons for the ease of machinability of chemically vapour deposited (CVD) 3C-SiC compared to SC-3C-SiC, simulation results also explains why SC-SiC provides a better measure of attainable surface roughness in comparison to CVD-SiC and reaction bonded (RB)-SiC.

AB - Silicon carbide (SiC) is a suitable candidate for MEMS, NEMS, optoelectronic andnanotribological applications e.g. airborne laser devices, laser radar systems, vacuumultraviolet (VUV) telescopes and space based laser mirrors. In-depth understanding of the influence of coolant and crystal structure of the work material on the nanometric cutting process of SiC could help in cost saving operations. Therefore, nanoscratching trials were carried out on single crystal 6H-SiC involving four pre-selected coolants to emulate nanometric cutting. A specific coolant was found to improve the cutting conditions tremendously and hence recommended. Moreover, a molecular dynamics (MD) simulation model was developed to simulate nanometric cutting of polycrystalline (PC) 3C-SiC and single crystal (SC) 3C-SiC. Besides explaining the reasons for the ease of machinability of chemically vapour deposited (CVD) 3C-SiC compared to SC-3C-SiC, simulation results also explains why SC-SiC provides a better measure of attainable surface roughness in comparison to CVD-SiC and reaction bonded (RB)-SiC.

KW - silicon carbide

KW - nanoscratching

KW - nanometric cutting

KW - surface roughness

KW - nanoparticle coolants

KW - crystal structures

UR - http://www.euspen.eu/content/News-and-events/euspen-events/Stockholm%202012/proceedings/VolumePro2/VolumePro2/HTML/files/assets/basic-html/page300.html

UR - http://www.stockholm2012.euspen.eu/

M3 - Paper

SP - 299

EP - 302

ER -

Goel S, Luo X, Stukowski A, Reuben RL. Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide. 2012. Paper presented at 12th euspen International Conference, Stockholm, Sweden.