Silicon carbide (SiC) is a suitable candidate for MEMS, NEMS, optoelectronic andnanotribological applications e.g. airborne laser devices, laser radar systems, vacuumultraviolet (VUV) telescopes and space based laser mirrors. In-depth understanding of the influence of coolant and crystal structure of the work material on the nanometric cutting process of SiC could help in cost saving operations. Therefore, nanoscratching trials were carried out on single crystal 6H-SiC involving four pre-selected coolants to emulate nanometric cutting. A specific coolant was found to improve the cutting conditions tremendously and hence recommended. Moreover, a molecular dynamics (MD) simulation model was developed to simulate nanometric cutting of polycrystalline (PC) 3C-SiC and single crystal (SC) 3C-SiC. Besides explaining the reasons for the ease of machinability of chemically vapour deposited (CVD) 3C-SiC compared to SC-3C-SiC, simulation results also explains why SC-SiC provides a better measure of attainable surface roughness in comparison to CVD-SiC and reaction bonded (RB)-SiC.
|Number of pages||4|
|Publication status||Published - Jun 2012|
|Event||12th euspen International Conference - Stockholm, Sweden|
Duration: 4 Jun 2012 → 8 Jun 2012
|Conference||12th euspen International Conference|
|Period||4/06/12 → 8/06/12|
- silicon carbide
- nanometric cutting
- surface roughness
- nanoparticle coolants
- crystal structures
Goel, S., Luo, X., Stukowski, A., & Reuben, R. L. (2012). Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide. 299-302. Paper presented at 12th euspen International Conference, Stockholm, Sweden.