Abstract
The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.
| Original language | English |
|---|---|
| Article number | 12905 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 99 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 21 Sept 2011 |
Keywords
- energy gap
- gallium compounds
- gold
- III-V semiconductors
- indium compounds
- metallic thin films
- Photoluminescence
- polaritons
- red shift
- semiconductor quantum wells
- semiconductor-metal boundaries
- surface plasmons
- wide band gap semiconductors
Fingerprint
Dive into the research topics of 'Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver