Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

K.G. Gryczynski, P.R. Vemuri, Ian Watson, Arup Neogi

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Abstract

The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.
Original languageEnglish
Article number12905
Number of pages3
JournalApplied Physics Letters
Volume99
Issue number12
DOIs
Publication statusPublished - 21 Sep 2011

Keywords

  • energy gap
  • gallium compounds
  • gold
  • III-V semiconductors
  • indium compounds
  • metallic thin films
  • Photoluminescence
  • polaritons
  • red shift
  • semiconductor quantum wells
  • semiconductor-metal boundaries
  • surface plasmons
  • wide band gap semiconductors

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