Influence of laser-drive parameters on annular fast electron transport in silicon

D A MacLellan, D C Carroll, R J Gray, A P L Robinson, M P Desjarlais, D Neely, P McKenna

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Three-dimensional hybrid particle-in-cell simulations are used to investigate the sensitivity of annular fast electron transport patterns in silicon to the properties of the drive laser pulse. It is found that the annular transport, which is induced by self-generated resistive magnetic fields, is particularly sensitive to the peak laser pulse intensity. The radius of the annular fast electron distribution can be varied by changing the drive laser pulse properties, and in particular the focal spot size. An ability to optically 'tune' the properties of an annular fast electron transport pattern could have important implications for the development of advanced ignition schemes and for tailoring the properties of beams of laser-accelerated ions.
LanguageEnglish
Article number084002
Number of pages8
JournalPlasma Physics and Controlled Fusion
Volume56
Issue number8
Early online date22 Jul 2014
DOIs
Publication statusPublished - Aug 2014

Fingerprint

Laser pulses
Silicon
Lasers
silicon
lasers
electrons
pulses
Ignition
electron distribution
Magnetic fields
ignition
Electrons
Ions
radii
Electron Transport
cells
magnetic fields
ions
simulation

Keywords

  • fast electron transport
  • silicon
  • laser-drive parameters

Cite this

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abstract = "Three-dimensional hybrid particle-in-cell simulations are used to investigate the sensitivity of annular fast electron transport patterns in silicon to the properties of the drive laser pulse. It is found that the annular transport, which is induced by self-generated resistive magnetic fields, is particularly sensitive to the peak laser pulse intensity. The radius of the annular fast electron distribution can be varied by changing the drive laser pulse properties, and in particular the focal spot size. An ability to optically 'tune' the properties of an annular fast electron transport pattern could have important implications for the development of advanced ignition schemes and for tailoring the properties of beams of laser-accelerated ions.",
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Influence of laser-drive parameters on annular fast electron transport in silicon. / MacLellan, D A; Carroll, D C; Gray, R J; Robinson, A P L; Desjarlais, M P; Neely, D; McKenna, P.

In: Plasma Physics and Controlled Fusion, Vol. 56, No. 8, 084002, 08.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of laser-drive parameters on annular fast electron transport in silicon

AU - MacLellan, D A

AU - Carroll, D C

AU - Gray, R J

AU - Robinson, A P L

AU - Desjarlais, M P

AU - Neely, D

AU - McKenna, P

PY - 2014/8

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AB - Three-dimensional hybrid particle-in-cell simulations are used to investigate the sensitivity of annular fast electron transport patterns in silicon to the properties of the drive laser pulse. It is found that the annular transport, which is induced by self-generated resistive magnetic fields, is particularly sensitive to the peak laser pulse intensity. The radius of the annular fast electron distribution can be varied by changing the drive laser pulse properties, and in particular the focal spot size. An ability to optically 'tune' the properties of an annular fast electron transport pattern could have important implications for the development of advanced ignition schemes and for tailoring the properties of beams of laser-accelerated ions.

KW - fast electron transport

KW - silicon

KW - laser-drive parameters

UR - http://iopscience.iop.org/0741-3335/

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DO - 10.1088/0741-3335/56/8/084002

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T2 - Plasma Physics and Controlled Fusion

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