Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−xyN

Gunnar Kusch, Johannes Enslin, Lucia Spasevski, Tolga Teke, Tim Wernicke, Paul R. Edwards, Michael Kneissl, Robert W. Martin

Research output: Contribution to journalArticle

Abstract

The application of quaternary In xAl yGa 1-x- yN active regions is a promising path towards high efficiency UVB-light emitting diodes (LEDs). For the utilization of In xAl yGa 1-x-yN, detailed knowledge of the interplay between growth parameters, adatom incorporation, optical and structural properties is crucial. We investigated the influence of the trimethylaluminium (TMAl) and trimethylindium (TMIn) flux on the composition and luminescence properties of In xAl yGa 1-x-yN layers by multi-mode scanning electron microscopy. We found that varying the molar TMIn flow from 0 to 17.3 μmol min -1 led to an InN concentration between 0% and 3.2% and an emission energy between 4.17 and 3.75 eV. The variation of the molar TMAl flow from 3.5 to 35.4 μmol min -1 resulted in a AlN composition between 7.8% and 30.7% with an emission energy variation between 3.6 and 4.1 eV. Cathodoluminescence hyperspectral imaging provided evidence for the formation of nanoscale InN-rich regions. Analyzing the emission properties of these InN-rich regions showed that their emission energy is inhomogeneous and varies by ≈150 meV. We provide evidence that the formation of these InN-rich regions is highly dependent on the AlN and InN composition of the layer and that their formation will strongly affect the performance of In xAl yGa 1-x-yN LEDs.

LanguageEnglish
Article numberSCCB18
Number of pages6
JournalJapanese Journal of Applied Physics
Volume58
Issue numberSC
Early online date14 May 2019
DOIs
Publication statusPublished - 1 Jun 2019

Fingerprint

inhomogeneity
Light emitting diodes
Chemical analysis
light emitting diodes
Cathodoluminescence
Adatoms
Luminescence
Structural properties
Optical properties
cathodoluminescence
adatoms
Fluxes
energy
Scanning electron microscopy
luminescence
optical properties
scanning electron microscopy
Hyperspectral imaging

Keywords

  • high efficiency UVB-LEDs
  • composition
  • luminescence
  • cathodoluminescence hyperspectral imaging

Cite this

@article{d382a86002dc499e9523cec679123dfc,
title = "Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN",
abstract = "The application of quaternary In xAl yGa 1-x- yN active regions is a promising path towards high efficiency UVB-light emitting diodes (LEDs). For the utilization of In xAl yGa 1-x-yN, detailed knowledge of the interplay between growth parameters, adatom incorporation, optical and structural properties is crucial. We investigated the influence of the trimethylaluminium (TMAl) and trimethylindium (TMIn) flux on the composition and luminescence properties of In xAl yGa 1-x-yN layers by multi-mode scanning electron microscopy. We found that varying the molar TMIn flow from 0 to 17.3 μmol min -1 led to an InN concentration between 0{\%} and 3.2{\%} and an emission energy between 4.17 and 3.75 eV. The variation of the molar TMAl flow from 3.5 to 35.4 μmol min -1 resulted in a AlN composition between 7.8{\%} and 30.7{\%} with an emission energy variation between 3.6 and 4.1 eV. Cathodoluminescence hyperspectral imaging provided evidence for the formation of nanoscale InN-rich regions. Analyzing the emission properties of these InN-rich regions showed that their emission energy is inhomogeneous and varies by ≈150 meV. We provide evidence that the formation of these InN-rich regions is highly dependent on the AlN and InN composition of the layer and that their formation will strongly affect the performance of In xAl yGa 1-x-yN LEDs.",
keywords = "high efficiency UVB-LEDs, composition, luminescence, cathodoluminescence hyperspectral imaging",
author = "Gunnar Kusch and Johannes Enslin and Lucia Spasevski and Tolga Teke and Tim Wernicke and Edwards, {Paul R.} and Michael Kneissl and Martin, {Robert W.}",
year = "2019",
month = "6",
day = "1",
doi = "10.7567/1347-4065/ab147a",
language = "English",
volume = "58",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
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}

Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−xyN. / Kusch, Gunnar; Enslin, Johannes; Spasevski, Lucia; Teke, Tolga; Wernicke, Tim; Edwards, Paul R.; Kneissl, Michael; Martin, Robert W.

In: Japanese Journal of Applied Physics, Vol. 58, No. SC, SCCB18, 01.06.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN

AU - Kusch, Gunnar

AU - Enslin, Johannes

AU - Spasevski, Lucia

AU - Teke, Tolga

AU - Wernicke, Tim

AU - Edwards, Paul R.

AU - Kneissl, Michael

AU - Martin, Robert W.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - The application of quaternary In xAl yGa 1-x- yN active regions is a promising path towards high efficiency UVB-light emitting diodes (LEDs). For the utilization of In xAl yGa 1-x-yN, detailed knowledge of the interplay between growth parameters, adatom incorporation, optical and structural properties is crucial. We investigated the influence of the trimethylaluminium (TMAl) and trimethylindium (TMIn) flux on the composition and luminescence properties of In xAl yGa 1-x-yN layers by multi-mode scanning electron microscopy. We found that varying the molar TMIn flow from 0 to 17.3 μmol min -1 led to an InN concentration between 0% and 3.2% and an emission energy between 4.17 and 3.75 eV. The variation of the molar TMAl flow from 3.5 to 35.4 μmol min -1 resulted in a AlN composition between 7.8% and 30.7% with an emission energy variation between 3.6 and 4.1 eV. Cathodoluminescence hyperspectral imaging provided evidence for the formation of nanoscale InN-rich regions. Analyzing the emission properties of these InN-rich regions showed that their emission energy is inhomogeneous and varies by ≈150 meV. We provide evidence that the formation of these InN-rich regions is highly dependent on the AlN and InN composition of the layer and that their formation will strongly affect the performance of In xAl yGa 1-x-yN LEDs.

AB - The application of quaternary In xAl yGa 1-x- yN active regions is a promising path towards high efficiency UVB-light emitting diodes (LEDs). For the utilization of In xAl yGa 1-x-yN, detailed knowledge of the interplay between growth parameters, adatom incorporation, optical and structural properties is crucial. We investigated the influence of the trimethylaluminium (TMAl) and trimethylindium (TMIn) flux on the composition and luminescence properties of In xAl yGa 1-x-yN layers by multi-mode scanning electron microscopy. We found that varying the molar TMIn flow from 0 to 17.3 μmol min -1 led to an InN concentration between 0% and 3.2% and an emission energy between 4.17 and 3.75 eV. The variation of the molar TMAl flow from 3.5 to 35.4 μmol min -1 resulted in a AlN composition between 7.8% and 30.7% with an emission energy variation between 3.6 and 4.1 eV. Cathodoluminescence hyperspectral imaging provided evidence for the formation of nanoscale InN-rich regions. Analyzing the emission properties of these InN-rich regions showed that their emission energy is inhomogeneous and varies by ≈150 meV. We provide evidence that the formation of these InN-rich regions is highly dependent on the AlN and InN composition of the layer and that their formation will strongly affect the performance of In xAl yGa 1-x-yN LEDs.

KW - high efficiency UVB-LEDs

KW - composition

KW - luminescence

KW - cathodoluminescence hyperspectral imaging

UR - https://iopscience.iop.org/journal/1347-4065

U2 - 10.7567/1347-4065/ab147a

DO - 10.7567/1347-4065/ab147a

M3 - Article

VL - 58

JO - Japanese Journal of Applied Physics

T2 - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - SC

M1 - SCCB18

ER -