Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

Y.N. Qiu, J.M. Rorison, H.D. Sun, S. Calvez, M.D. Dawson, A.C. Bryce

Research output: Contribution to journalArticle

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Abstract

We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.
LanguageEnglish
Article number231112
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number23
DOIs
Publication statusPublished - 5 Dec 2005

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quantum wells
optical transition
mass spectroscopy
photoluminescence
electronics
spectroscopy
excitation
ions

Keywords

  • indium compounds
  • gallium arsenide
  • gallium compounds
  • III-V semiconductors
  • semiconductor quantum wells
  • chemical interdiffusion
  • band structure

Cite this

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title = "Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model",
abstract = "We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.",
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Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model. / Qiu, Y.N.; Rorison, J.M.; Sun, H.D.; Calvez, S.; Dawson, M.D.; Bryce, A.C.

In: Applied Physics Letters, Vol. 87, No. 23, 231112, 05.12.2005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

AU - Qiu, Y.N.

AU - Rorison, J.M.

AU - Sun, H.D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Bryce, A.C.

PY - 2005/12/5

Y1 - 2005/12/5

N2 - We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.

AB - We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.

KW - indium compounds

KW - gallium arsenide

KW - gallium compounds

KW - III-V semiconductors

KW - semiconductor quantum wells

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