Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

Y.N. Qiu; J.M. Rorison; H.D. Sun; S. Calvez; M.D. Dawson; A.C. Bryce

doi:10.1063/1.2138350

Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

Y.N. Qiu, J.M. Rorison, H.D. Sun, S. Calvez, M.D. Dawson, A.C. Bryce

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9 Citations (Scopus)

Abstract

We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.

Original language	English
Article number	231112
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2138350
Publication status	Published - 5 Dec 2005

Keywords

indium compounds
gallium arsenide
gallium compounds
III-V semiconductors
semiconductor quantum wells
chemical interdiffusion
band structure

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10.1063/1.2138350

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title = "Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model",

abstract = "We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.",

keywords = "indium compounds, gallium arsenide, gallium compounds, III-V semiconductors, semiconductor quantum wells, chemical interdiffusion, band structure",

author = "Y.N. Qiu and J.M. Rorison and H.D. Sun and S. Calvez and M.D. Dawson and A.C. Bryce",

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journal = "Applied Physics Letters",

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T1 - Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

AU - Qiu, Y.N.

AU - Rorison, J.M.

AU - Sun, H.D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Bryce, A.C.

PY - 2005/12/5

Y1 - 2005/12/5

N2 - We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.

AB - We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.

KW - indium compounds

KW - gallium arsenide

KW - gallium compounds

KW - III-V semiconductors

KW - semiconductor quantum wells

KW - chemical interdiffusion

KW - band structure

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M3 - Article

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JO - Applied Physics Letters

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Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

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Keywords

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