Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon

X. Zhao, K. Huang, J. Bruckbauer, S. Shen, C. Zhu, P. Fletcher, P. Feng, Y. Cai, J. Bai, C. Trager-Cowan, R. W. Martin, T. Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Monolithic on-chip integration of electronics & photonics using III-nitrides for telecoms
Martin, R. (Principal Investigator) & Edwards, P. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/10/20 → 31/03/25
Project: Research
Quantitative non-destructive nanoscale characterisation of advanced materials
Hourahine, B. (Principal Investigator), Edwards, P. (Co-investigator), Roper, M. (Co-investigator), Trager-Cowan, C. (Co-investigator) & Gunasekar, N. (Research Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/06/17 → 30/11/21
Project: Research
Advanced III-nitride materials for next generation UV emitters used in water purification, environmental protection and local network communication
Martin, R. (Principal Investigator)
EPSRC (Engineering and Physical Sciences Research Council)
31/12/14 → 30/12/18
Project: Research