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Abstract
It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) served as an active region for a light-emitting diode (LED). So far, this growth scheme has achieved a great success in the growth of III-nitride LEDs on c-plane substrates, but has not yet been applied in the growth of any other orientated III-nitride LEDs. In this paper, we have applied this growth scheme in the growth of semi-polar (11–22) green LEDs, and have investigated the impact of the SLS pre-layer on the optical performance of semi-polar (11–22) green LEDs grown on patterned (113) silicon substrates. Our results demonstrate that the semi-polar LEDs with the SLS pre-layer exhibit an improvement in both internal quantum efficiency and light output, which is similar to their c-plane counterparts. However, the performance improvement is not so significant as in the c-plane case. This is because the SLS pre-layer also introduces extra misfit dislocations for the semi-polar, but not the c-plane case, which act as non-radiative recombination centres.
Original language | English |
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Article number | 12650 |
Number of pages | 8 |
Journal | Scientific Reports |
Volume | 10 |
Issue number | 1 |
DOIs | |
Publication status | Published - 28 Jul 2020 |
Keywords
- light-emitting diode (LED)
- III-nitride LEDs
- semi-polar LEDs
- performance
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Quantitative non-destructive nanoscale characterisation of advanced materials
Hourahine, B., Edwards, P., Roper, M., Trager-Cowan, C. & Gunasekar, N.
EPSRC (Engineering and Physical Sciences Research Council)
1/06/17 → 30/11/21
Project: Research
Datasets
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Data for: "Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon"
Bruckbauer, J. (Creator), Trager-Cowan, C. (Contributor) & Martin, R. (Contributor), University of Strathclyde, 19 Apr 2021
DOI: 10.15129/a30b848c-c99e-43b6-89e8-0c5b939b64fc
Dataset