Individually-addressed planar nanoscale InGaN-based light emitters

Research output: Contribution to conferencePaper

Abstract

We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
Original languageEnglish
Pages754-755
Number of pages12
DOIs
Publication statusPublished - 23 Sep 2012
Event2012 IEEE Photonics Conference (IPC) - Burlingame, CA, United States
Duration: 23 Sep 201227 Sep 2012

Conference

Conference2012 IEEE Photonics Conference (IPC)
CountryUnited States
CityBurlingame, CA
Period23/09/1227/09/12

Keywords

  • InGaN-based light emitters
  • nanoscale-LEDs
  • photonics
  • optics

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