Individually-addressed planar nanoscale InGaN-based light emitters

Research output: Contribution to conferencePaper

Abstract

We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
Original languageEnglish
Pages754-755
Number of pages12
DOIs
Publication statusPublished - 23 Sep 2012
Event2012 IEEE Photonics Conference (IPC) - Burlingame, CA, United States
Duration: 23 Sep 201227 Sep 2012

Conference

Conference2012 IEEE Photonics Conference (IPC)
CountryUnited States
CityBurlingame, CA
Period23/09/1227/09/12

Keywords

  • InGaN-based light emitters
  • nanoscale-LEDs
  • photonics
  • optics

Projects

Cite this

Massoubre, D., Edwards, P. R., Xie, E., Richardson, E., Watson, I. M., Gu, E., Martin, R. W., & Dawson, M. D. (2012). Individually-addressed planar nanoscale InGaN-based light emitters. 754-755. Paper presented at 2012 IEEE Photonics Conference (IPC), Burlingame, CA, United States. https://doi.org/10.1109/IPCon.2012.6358842