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We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
|Number of pages||12|
|Publication status||Published - 23 Sep 2012|
|Event||2012 IEEE Photonics Conference (IPC) - Burlingame, CA, United States|
Duration: 23 Sep 2012 → 27 Sep 2012
|Conference||2012 IEEE Photonics Conference (IPC)|
|Period||23/09/12 → 27/09/12|
- InGaN-based light emitters
FingerprintDive into the research topics of 'Individually-addressed planar nanoscale InGaN-based light emitters'. Together they form a unique fingerprint.
- 1 Finished
1/04/11 → 31/03/15