Individually-addressable flip-chip AllnGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power

H.Z. Zhang, D. Massoubre, J McKendry, Z. Gong, B.J.E. Guilhabert, C. Griffin, E. Gu, P.E. Jessop, J.M. Girkin, M.D. Dawson

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Micropixelated blue (470nm) and ultraviolet (370nm) AlInGaN light emitting diode arrays have been fabricated in flip-chip format with different pixel diameters (72μm and 30μm at, respectively, 100 and 278 pixels/mm2). Each micro-LED pixel can be individually-addressed and the devices possess a specially designed n-common contact incorporated to ensure uniform current injection and consequently uniform light emission across the array. The flip-chip micro-LEDs show, per pixel, high continuous output intensity of up to 0.55μW/μm2 (55W/cm2) at an injection current density of 10kA/cm2 and can sustain continuous injection current densities of up to 12kA/cm2 before breakdown. We also demonstrate that nanosecond pulsed output operation of these devices with per pixel onaxis average peak intensity up to 2.9μW/μm2 (corresponding to energy of 45pJ per 22ns optical pulse) can be achieved. We investigate the pertinent performance characteristics of these arrays for micro-projection applications, including the prospect of integrated optical pumping of organic semiconductor lasers.
LanguageEnglish
Pages9918-9926
Number of pages9
JournalOptics Express
Volume16
Issue number13
DOIs
Publication statusPublished - 23 Jun 2008

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light emitting diodes
pixels
chips
output
injection
organic lasers
current density
organic semiconductors
optical pumping
format
light emission
breakdown
projection
semiconductor lasers
pulses
energy

Keywords

  • confocal microscopy
  • microstructure fabrication
  • light emitting diodes
  • LED
  • optical devices
  • optics

Cite this

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title = "Individually-addressable flip-chip AllnGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power",
abstract = "Micropixelated blue (470nm) and ultraviolet (370nm) AlInGaN light emitting diode arrays have been fabricated in flip-chip format with different pixel diameters (72μm and 30μm at, respectively, 100 and 278 pixels/mm2). Each micro-LED pixel can be individually-addressed and the devices possess a specially designed n-common contact incorporated to ensure uniform current injection and consequently uniform light emission across the array. The flip-chip micro-LEDs show, per pixel, high continuous output intensity of up to 0.55μW/μm2 (55W/cm2) at an injection current density of 10kA/cm2 and can sustain continuous injection current densities of up to 12kA/cm2 before breakdown. We also demonstrate that nanosecond pulsed output operation of these devices with per pixel onaxis average peak intensity up to 2.9μW/μm2 (corresponding to energy of 45pJ per 22ns optical pulse) can be achieved. We investigate the pertinent performance characteristics of these arrays for micro-projection applications, including the prospect of integrated optical pumping of organic semiconductor lasers.",
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Individually-addressable flip-chip AllnGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power. / Zhang, H.Z.; Massoubre, D.; McKendry, J; Gong, Z.; Guilhabert, B.J.E.; Griffin, C.; Gu, E.; Jessop, P.E.; Girkin, J.M.; Dawson, M.D.

In: Optics Express, Vol. 16, No. 13, 23.06.2008, p. 9918-9926.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Individually-addressable flip-chip AllnGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power

AU - Zhang, H.Z.

AU - Massoubre, D.

AU - McKendry, J

AU - Gong, Z.

AU - Guilhabert, B.J.E.

AU - Griffin, C.

AU - Gu, E.

AU - Jessop, P.E.

AU - Girkin, J.M.

AU - Dawson, M.D.

PY - 2008/6/23

Y1 - 2008/6/23

N2 - Micropixelated blue (470nm) and ultraviolet (370nm) AlInGaN light emitting diode arrays have been fabricated in flip-chip format with different pixel diameters (72μm and 30μm at, respectively, 100 and 278 pixels/mm2). Each micro-LED pixel can be individually-addressed and the devices possess a specially designed n-common contact incorporated to ensure uniform current injection and consequently uniform light emission across the array. The flip-chip micro-LEDs show, per pixel, high continuous output intensity of up to 0.55μW/μm2 (55W/cm2) at an injection current density of 10kA/cm2 and can sustain continuous injection current densities of up to 12kA/cm2 before breakdown. We also demonstrate that nanosecond pulsed output operation of these devices with per pixel onaxis average peak intensity up to 2.9μW/μm2 (corresponding to energy of 45pJ per 22ns optical pulse) can be achieved. We investigate the pertinent performance characteristics of these arrays for micro-projection applications, including the prospect of integrated optical pumping of organic semiconductor lasers.

AB - Micropixelated blue (470nm) and ultraviolet (370nm) AlInGaN light emitting diode arrays have been fabricated in flip-chip format with different pixel diameters (72μm and 30μm at, respectively, 100 and 278 pixels/mm2). Each micro-LED pixel can be individually-addressed and the devices possess a specially designed n-common contact incorporated to ensure uniform current injection and consequently uniform light emission across the array. The flip-chip micro-LEDs show, per pixel, high continuous output intensity of up to 0.55μW/μm2 (55W/cm2) at an injection current density of 10kA/cm2 and can sustain continuous injection current densities of up to 12kA/cm2 before breakdown. We also demonstrate that nanosecond pulsed output operation of these devices with per pixel onaxis average peak intensity up to 2.9μW/μm2 (corresponding to energy of 45pJ per 22ns optical pulse) can be achieved. We investigate the pertinent performance characteristics of these arrays for micro-projection applications, including the prospect of integrated optical pumping of organic semiconductor lasers.

KW - confocal microscopy

KW - microstructure fabrication

KW - light emitting diodes

KW - LED

KW - optical devices

KW - optics

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