Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

Jonathan J. D. McKendry; Bruce R. Rae; Zheng Gong; Keith R. Muir; Benoit Guilhabert; David Massoubre; Erdan Gu; David Renshaw; Martin D. Dawson; Robert K. Henderson

doi:10.1109/LPT.2009.2019114

Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

Jonathan J. D. McKendry
, Bruce R. Rae
, Zheng Gong
, Keith R. Muir
, Benoit Guilhabert
, David Massoubre
, Erdan Gu
, David Renshaw
, Martin D. Dawson
, Robert K. Henderson

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

6 Downloads (Pure)

Abstract

We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.

Original language	English
Pages (from-to)	811-813
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2009.2019114
Publication status	Published - 15 Jun 2009

Keywords

complementary metal–oxide–semiconductor (CMOS)
GaN
microdisplays
micro-light-emitting diodes (micro-LEDs)

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10.1109/LPT.2009.2019114

Cite this

@article{48608d015e2a43c99bb2efe795a8a669,

title = "Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses",

abstract = "We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 \× 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.",

keywords = "complementary metal–oxide–semiconductor (CMOS), GaN, microdisplays, micro-light-emitting diodes (micro-LEDs)",

author = "McKendry, \{Jonathan J. D.\} and Rae, \{Bruce R.\} and Zheng Gong and Muir, \{Keith R.\} and Benoit Guilhabert and David Massoubre and Erdan Gu and David Renshaw and Dawson, \{Martin D.\} and Henderson, \{Robert K.\}",

year = "2009",

month = jun,

day = "15",

doi = "10.1109/LPT.2009.2019114",

language = "English",

volume = "21",

pages = "811--813",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "12",

}

TY - JOUR

T1 - Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

AU - McKendry, Jonathan J. D.

AU - Rae, Bruce R.

AU - Gong, Zheng

AU - Muir, Keith R.

AU - Guilhabert, Benoit

AU - Massoubre, David

AU - Gu, Erdan

AU - Renshaw, David

AU - Dawson, Martin D.

AU - Henderson, Robert K.

PY - 2009/6/15

Y1 - 2009/6/15

N2 - We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.

AB - We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.

KW - complementary metal–oxide–semiconductor (CMOS)

KW - GaN

KW - microdisplays

KW - micro-light-emitting diodes (micro-LEDs)

UR - http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4814576

U2 - 10.1109/LPT.2009.2019114

DO - 10.1109/LPT.2009.2019114

M3 - Article

SN - 1041-1135

VL - 21

SP - 811

EP - 813

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

Abstract

Keywords

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Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices

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Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

Abstract

Keywords

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Projects

Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices

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