Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

Jonathan J. D. McKendry, Bruce R. Rae, Zheng Gong, Keith R. Muir, Benoit Guilhabert, David Massoubre, Erdan Gu, David Renshaw, Martin D. Dawson, Robert K. Henderson

Research output: Contribution to journalArticlepeer-review

78 Citations (Scopus)
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We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.
Original languageEnglish
Pages (from-to)811-813
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number12
Publication statusPublished - 15 Jun 2009


  • complementary metal–oxide–semiconductor (CMOS)
  • GaN
  • microdisplays
  • micro-light-emitting diodes (micro-LEDs)


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