Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

Jonathan J. D. McKendry; Bruce R. Rae; Zheng Gong; Keith R. Muir; Benoit Guilhabert; David Massoubre; Erdan Gu; David Renshaw; Martin D. Dawson; Robert K. Henderson

doi:10.1109/LPT.2009.2019114

Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

Jonathan J. D. McKendry, Bruce R. Rae, Zheng Gong, Keith R. Muir, Benoit Guilhabert, David Massoubre, Erdan Gu, David Renshaw, Martin D. Dawson, Robert K. Henderson

Research output: Contribution to journal › Article › peer-review

81 Citations (Scopus)

6 Downloads (Pure)

Abstract

We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.

Original language	English
Pages (from-to)	811-813
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2009.2019114
Publication status	Published - 15 Jun 2009

Keywords

complementary metal–oxide–semiconductor (CMOS)
GaN
microdisplays
micro-light-emitting diodes (micro-LEDs)

Access to Document

10.1109/LPT.2009.2019114

Cite this

@article{48608d015e2a43c99bb2efe795a8a669,

title = "Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses",

abstract = "We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.",

keywords = "complementary metal–oxide–semiconductor (CMOS), GaN, microdisplays, micro-light-emitting diodes (micro-LEDs)",

author = "McKendry, {Jonathan J. D.} and Rae, {Bruce R.} and Zheng Gong and Muir, {Keith R.} and Benoit Guilhabert and David Massoubre and Erdan Gu and David Renshaw and Dawson, {Martin D.} and Henderson, {Robert K.}",

year = "2009",

month = jun,

day = "15",

doi = "10.1109/LPT.2009.2019114",

language = "English",

volume = "21",

pages = "811--813",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "12",

}

TY - JOUR

T1 - Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

AU - McKendry, Jonathan J. D.

AU - Rae, Bruce R.

AU - Gong, Zheng

AU - Muir, Keith R.

AU - Guilhabert, Benoit

AU - Massoubre, David

AU - Gu, Erdan

AU - Renshaw, David

AU - Dawson, Martin D.

AU - Henderson, Robert K.

PY - 2009/6/15

Y1 - 2009/6/15

N2 - We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.

AB - We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.

KW - complementary metal–oxide–semiconductor (CMOS)

KW - GaN

KW - microdisplays

KW - micro-light-emitting diodes (micro-LEDs)

UR - http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=4814576

U2 - 10.1109/LPT.2009.2019114

DO - 10.1109/LPT.2009.2019114

M3 - Article

SN - 1041-1135

VL - 21

SP - 811

EP - 813

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices

Cite this

Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices

Cite this