We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.
- complementary metal–oxide–semiconductor (CMOS)
- micro-light-emitting diodes (micro-LEDs)
McKendry, J. J. D., Rae, B. R., Gong, Z., Muir, K. R., Guilhabert, B., Massoubre, D., ... Henderson, R. K. (2009). Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses. IEEE Photonics Technology Letters, 21(12), 811-813. https://doi.org/10.1109/LPT.2009.2019114