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We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.
|Number of pages||3|
|Journal||IEEE Photonics Technology Letters|
|Publication status||Published - 15 Jun 2009|
- complementary metal–oxide–semiconductor (CMOS)
- micro-light-emitting diodes (micro-LEDs)
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- 1 Finished
Semiconductor-Based Hybrid Structures for Ultraviolet Micro-Devices
Dawson, M., Calvez, S., Martin, R. & Watson, I.
EPSRC (Engineering and Physical Sciences Research Council)
1/01/07 → 31/12/10