Indirect band gap of light-emitting BC2N

Y Chen, J C Barnard, R E Palmer, M O Watanabe, T Sasaki, Yu Chen

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Abstract

We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.

Original languageEnglish
Pages (from-to)2406-2408
Number of pages3
JournalPhysical Review Letters
Volume83
Issue number12
DOIs
Publication statusPublished - 20 Sep 1999

Keywords

  • c-n nanotubes
  • thin films
  • ab-initio
  • boron
  • graphite
  • photoluminescence

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