We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.
- c-n nanotubes
- thin films