Indirect band gap of light-emitting BC2N

Y  Chen; J C  Barnard; R E  Palmer; M O  Watanabe; T  Sasaki; Yu Chen

doi:10.1103/PhysRevLett.83.2406

Indirect band gap of light-emitting BC2N

Y Chen, J C Barnard, R E Palmer, M O Watanabe, T Sasaki, Yu Chen

Physics

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.

Original language	English
Pages (from-to)	2406-2408
Number of pages	3
Journal	Physical Review Letters
Volume	83
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.83.2406
Publication status	Published - 20 Sept 1999

Keywords

c-n nanotubes
thin films
ab-initio
boron
graphite
photoluminescence

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10.1103/PhysRevLett.83.2406

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title = "Indirect band gap of light-emitting BC2N",

abstract = "We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.",

keywords = "c-n nanotubes, thin films, ab-initio, boron, graphite, photoluminescence",

author = "Y Chen and Barnard, {J C} and Palmer, {R E} and Watanabe, {M O} and T Sasaki and Yu Chen",

year = "1999",

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AU - Chen, Y

AU - Barnard, J C

AU - Palmer, R E

AU - Watanabe, M O

AU - Sasaki, T

AU - Chen, Yu

PY - 1999/9/20

Y1 - 1999/9/20

N2 - We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.

AB - We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.

KW - c-n nanotubes

KW - thin films

KW - ab-initio

KW - boron

KW - graphite

KW - photoluminescence

U2 - 10.1103/PhysRevLett.83.2406

DO - 10.1103/PhysRevLett.83.2406

M3 - Article

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VL - 83

SP - 2406

EP - 2408

JO - Physical Review Letters

JF - Physical Review Letters

IS - 12

ER -

Indirect band gap of light-emitting BC2N

Abstract

Keywords

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