Indirect band gap of light-emitting BC2N

Y Chen, J C Barnard, R E Palmer, M O Watanabe, T Sasaki, Yu Chen

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.

LanguageEnglish
Pages2406-2408
Number of pages3
JournalPhysical Review Letters
Volume83
Issue number12
DOIs
Publication statusPublished - 20 Sep 1999

Fingerprint

energy dissipation
electron energy
photoluminescence
high resolution
spectroscopy
ultrahigh vacuum
scanning tunneling microscopy
conduction bands
valence
electronics
excitation

Keywords

  • c-n nanotubes
  • thin films
  • ab-initio
  • boron
  • graphite
  • photoluminescence

Cite this

Chen, Y., Barnard, J. C., Palmer, R. E., Watanabe, M. O., Sasaki, T., & Chen, Y. (1999). Indirect band gap of light-emitting BC2N. Physical Review Letters, 83(12), 2406-2408. https://doi.org/10.1103/PhysRevLett.83.2406
Chen, Y ; Barnard, J C ; Palmer, R E ; Watanabe, M O ; Sasaki, T ; Chen, Yu. / Indirect band gap of light-emitting BC2N. In: Physical Review Letters. 1999 ; Vol. 83, No. 12. pp. 2406-2408.
@article{7b59abeadc4541a0ad79fa845c0f8267,
title = "Indirect band gap of light-emitting BC2N",
abstract = "We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.",
keywords = "c-n nanotubes, thin films, ab-initio, boron, graphite, photoluminescence",
author = "Y Chen and Barnard, {J C} and Palmer, {R E} and Watanabe, {M O} and T Sasaki and Yu Chen",
year = "1999",
month = "9",
day = "20",
doi = "10.1103/PhysRevLett.83.2406",
language = "English",
volume = "83",
pages = "2406--2408",
journal = "Physical Review Letters",
issn = "0031-9007",
number = "12",

}

Chen, Y, Barnard, JC, Palmer, RE, Watanabe, MO, Sasaki, T & Chen, Y 1999, 'Indirect band gap of light-emitting BC2N' Physical Review Letters, vol. 83, no. 12, pp. 2406-2408. https://doi.org/10.1103/PhysRevLett.83.2406

Indirect band gap of light-emitting BC2N. / Chen, Y ; Barnard, J C ; Palmer, R E ; Watanabe, M O ; Sasaki, T ; Chen, Yu.

In: Physical Review Letters, Vol. 83, No. 12, 20.09.1999, p. 2406-2408.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Indirect band gap of light-emitting BC2N

AU - Chen, Y

AU - Barnard, J C

AU - Palmer, R E

AU - Watanabe, M O

AU - Sasaki, T

AU - Chen, Yu

PY - 1999/9/20

Y1 - 1999/9/20

N2 - We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.

AB - We have employed high resolution electron energy loss spectroscopy (HREELS) (in ultrahigh vacuum) to investigate the band gap of the novel semiconductor BC2N by measuring electronic excitations from the valence band to the conduction band. Angle-resolved HREELS allows the observation of transitions which are not vertical in k space, and the measurements indicate an indirect band structure, even though this material emits visible photoluminescence. The results also reconcile scanning tunneling microscopy and photoluminescence measurements for the system.

KW - c-n nanotubes

KW - thin films

KW - ab-initio

KW - boron

KW - graphite

KW - photoluminescence

U2 - 10.1103/PhysRevLett.83.2406

DO - 10.1103/PhysRevLett.83.2406

M3 - Article

VL - 83

SP - 2406

EP - 2408

JO - Physical Review Letters

T2 - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 12

ER -

Chen Y, Barnard JC, Palmer RE, Watanabe MO, Sasaki T, Chen Y. Indirect band gap of light-emitting BC2N. Physical Review Letters. 1999 Sep 20;83(12):2406-2408. https://doi.org/10.1103/PhysRevLett.83.2406