Index and gain dynamics of optically-pumped GaInNAs vertical-cavity semiconductor optical amplifiers

N. Laurand, S. Calvez, M.D. Dawson, A.E. Kelly

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

To study the dynamic effects in GaInNAs vertical-cavity semiconductor amplifiers (VCSOAs), we carried out a pump-probe experiment on an optically biased VCSOA, first at antiresonance and then in gain. At antiresonance, the highest absorption region of the amplifier, the carrier-population-depletion-induced shift in the wavelength of the absorption was measured as a function of pump-probe delay. The corresponding index recovery time was measured to be ~50 ps±5 ps. In the amplification regime, we observed that the carrier depletion induced by the pump pulse decreased the available gain. The recovery time for the device gain in dB under these conditions was measured at ~55±15 ps. These results indicate that GaInNAs VCSOAs can process data at 10 Gbits/s with no patterning effect.
LanguageEnglish
Pages231115-1-231115-3
JournalApplied Physics Letters
Volume87
Issue number231115
DOIs
Publication statusPublished - 1 Dec 2005

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light amplifiers
amplifiers
cavities
pumps
depletion
recovery
probes
shift
pulses
wavelengths

Keywords

  • index dynamics
  • gain dynamics
  • GaInNAs
  • vertical-cavity
  • semiconductors
  • optical amplifiers
  • applied physics

Cite this

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title = "Index and gain dynamics of optically-pumped GaInNAs vertical-cavity semiconductor optical amplifiers",
abstract = "To study the dynamic effects in GaInNAs vertical-cavity semiconductor amplifiers (VCSOAs), we carried out a pump-probe experiment on an optically biased VCSOA, first at antiresonance and then in gain. At antiresonance, the highest absorption region of the amplifier, the carrier-population-depletion-induced shift in the wavelength of the absorption was measured as a function of pump-probe delay. The corresponding index recovery time was measured to be ~50 ps±5 ps. In the amplification regime, we observed that the carrier depletion induced by the pump pulse decreased the available gain. The recovery time for the device gain in dB under these conditions was measured at ~55±15 ps. These results indicate that GaInNAs VCSOAs can process data at 10 Gbits/s with no patterning effect.",
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Index and gain dynamics of optically-pumped GaInNAs vertical-cavity semiconductor optical amplifiers. / Laurand, N.; Calvez, S.; Dawson, M.D.; Kelly, A.E.

In: Applied Physics Letters, Vol. 87, No. 231115, 01.12.2005, p. 231115-1-231115-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Index and gain dynamics of optically-pumped GaInNAs vertical-cavity semiconductor optical amplifiers

AU - Laurand, N.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Kelly, A.E.

PY - 2005/12/1

Y1 - 2005/12/1

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AB - To study the dynamic effects in GaInNAs vertical-cavity semiconductor amplifiers (VCSOAs), we carried out a pump-probe experiment on an optically biased VCSOA, first at antiresonance and then in gain. At antiresonance, the highest absorption region of the amplifier, the carrier-population-depletion-induced shift in the wavelength of the absorption was measured as a function of pump-probe delay. The corresponding index recovery time was measured to be ~50 ps±5 ps. In the amplification regime, we observed that the carrier depletion induced by the pump pulse decreased the available gain. The recovery time for the device gain in dB under these conditions was measured at ~55±15 ps. These results indicate that GaInNAs VCSOAs can process data at 10 Gbits/s with no patterning effect.

KW - index dynamics

KW - gain dynamics

KW - GaInNAs

KW - vertical-cavity

KW - semiconductors

KW - optical amplifiers

KW - applied physics

UR - http://dx.doi.org/10.1063/1.2140068

U2 - 10.1063/1.2140068

DO - 10.1063/1.2140068

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JF - Applied Physics Letters

SN - 0003-6951

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