Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures

K. Long, A. Z. Kattamis, I. C. Cheng, Helena Gleskova, S. Wagner, J. C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)

Abstract

In this paper, the authors have developed an a-Si TFT process on clear plastic substrates which allows direct transfer of industry a-Si TFT process on glass to plastic substrate for flexible electronics applications. The high temperature process increases the reliability of the a-Si TFT's, which is critical for OLED's where one TFT must operate in a DC condition

LanguageEnglish
Title of host publicationDevice research conference digest
PublisherIEEE
Pages141-142
Number of pages2
ISBN (Print)0780390407
DOIs
Publication statusPublished - 2005
Event63rd IEEE Device Research Conference - Santa Barbara, United States
Duration: 20 Jun 200522 Jun 2005

Conference

Conference63rd IEEE Device Research Conference
CountryUnited States
CitySanta Barbara
Period20/06/0522/06/05

Fingerprint

Plastics
Flexible electronics
Organic light emitting diodes (OLED)
Substrates
Glass
Temperature
Industry

Keywords

  • organic light emitting diodes
  • threshold voltage
  • thin film transistors
  • temperature
  • substrates
  • plastics
  • active matrix technology
  • amorphous silicon
  • flat panel displays
  • glass industry

Cite this

Long, K., Kattamis, A. Z., Cheng, I. C., Gleskova, H., Wagner, S., & Sturm, J. C. (2005). Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures. In Device research conference digest (pp. 141-142). IEEE. https://doi.org/10.1109/DRC.2005.1553094
Long, K. ; Kattamis, A. Z. ; Cheng, I. C. ; Gleskova, Helena ; Wagner, S. ; Sturm, J. C. / Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures. Device research conference digest. IEEE, 2005. pp. 141-142
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title = "Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures",
abstract = "In this paper, the authors have developed an a-Si TFT process on clear plastic substrates which allows direct transfer of industry a-Si TFT process on glass to plastic substrate for flexible electronics applications. The high temperature process increases the reliability of the a-Si TFT's, which is critical for OLED's where one TFT must operate in a DC condition",
keywords = "organic light emitting diodes , threshold voltage , thin film transistors , temperature , substrates, plastics, active matrix technology , amorphous silicon, flat panel displays, glass industry",
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Long, K, Kattamis, AZ, Cheng, IC, Gleskova, H, Wagner, S & Sturm, JC 2005, Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures. in Device research conference digest. IEEE, pp. 141-142, 63rd IEEE Device Research Conference, Santa Barbara, United States, 20/06/05. https://doi.org/10.1109/DRC.2005.1553094

Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures. / Long, K.; Kattamis, A. Z.; Cheng, I. C.; Gleskova, Helena; Wagner, S.; Sturm, J. C.

Device research conference digest. IEEE, 2005. p. 141-142.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures

AU - Long, K.

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AU - Wagner, S.

AU - Sturm, J. C.

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KW - organic light emitting diodes

KW - threshold voltage

KW - thin film transistors

KW - temperature

KW - substrates

KW - plastics

KW - active matrix technology

KW - amorphous silicon

KW - flat panel displays

KW - glass industry

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Long K, Kattamis AZ, Cheng IC, Gleskova H, Wagner S, Sturm JC. Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures. In Device research conference digest. IEEE. 2005. p. 141-142 https://doi.org/10.1109/DRC.2005.1553094