Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures

K. Long, A. Z. Kattamis, I. C. Cheng, Helena Gleskova, S. Wagner, J. C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)

Abstract

In this paper, the authors have developed an a-Si TFT process on clear plastic substrates which allows direct transfer of industry a-Si TFT process on glass to plastic substrate for flexible electronics applications. The high temperature process increases the reliability of the a-Si TFT's, which is critical for OLED's where one TFT must operate in a DC condition

Original languageEnglish
Title of host publicationDevice research conference digest
PublisherIEEE
Pages141-142
Number of pages2
ISBN (Print)0780390407
DOIs
Publication statusPublished - 2005
Event63rd IEEE Device Research Conference - Santa Barbara, United States
Duration: 20 Jun 200522 Jun 2005

Conference

Conference63rd IEEE Device Research Conference
CountryUnited States
CitySanta Barbara
Period20/06/0522/06/05

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Keywords

  • organic light emitting diodes
  • threshold voltage
  • thin film transistors
  • temperature
  • substrates
  • plastics
  • active matrix technology
  • amorphous silicon
  • flat panel displays
  • glass industry

Cite this

Long, K., Kattamis, A. Z., Cheng, I. C., Gleskova, H., Wagner, S., & Sturm, J. C. (2005). Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures. In Device research conference digest (pp. 141-142). IEEE. https://doi.org/10.1109/DRC.2005.1553094