In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG

I.M. Watson, M.D. Dawson, C.J. Deatcher, H.S. Kim, K.S. Kim, C. Liu

Research output: Contribution to conferencePaper

Abstract

This paper covers in-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. It was presented at the 2001 European workshop on metalorganic vapour phase epitaxy.

Conference

ConferenceEuropean workshop on metalorganic vapour phase epitaxy
CityWrexham, United Kingdom
Period10/06/0113/06/01

Fingerprint

vapor phase epitaxy

Keywords

  • reflectometry
  • GaN
  • growth initiation
  • inGaN
  • structure growth
  • ELOG

Cite this

Watson, I. M., Dawson, M. D., Deatcher, C. J., Kim, H. S., Kim, K. S., & Liu, C. (2001). In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. Paper presented at European workshop on metalorganic vapour phase epitaxy, Wrexham, United Kingdom, .
Watson, I.M. ; Dawson, M.D. ; Deatcher, C.J. ; Kim, H.S. ; Kim, K.S. ; Liu, C. / In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. Paper presented at European workshop on metalorganic vapour phase epitaxy, Wrexham, United Kingdom, .
@conference{c1f8cd73d09b493ca134674cc101356a,
title = "In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG",
abstract = "This paper covers in-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. It was presented at the 2001 European workshop on metalorganic vapour phase epitaxy.",
keywords = "reflectometry, GaN, growth initiation, inGaN, structure growth, ELOG",
author = "I.M. Watson and M.D. Dawson and C.J. Deatcher and H.S. Kim and K.S. Kim and C. Liu",
year = "2001",
month = "6",
day = "13",
language = "English",
note = "European workshop on metalorganic vapour phase epitaxy ; Conference date: 10-06-2001 Through 13-06-2001",

}

Watson, IM, Dawson, MD, Deatcher, CJ, Kim, HS, Kim, KS & Liu, C 2001, 'In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG' Paper presented at European workshop on metalorganic vapour phase epitaxy, Wrexham, United Kingdom, 10/06/01 - 13/06/01, .

In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. / Watson, I.M.; Dawson, M.D.; Deatcher, C.J.; Kim, H.S.; Kim, K.S.; Liu, C.

2001. Paper presented at European workshop on metalorganic vapour phase epitaxy, Wrexham, United Kingdom, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG

AU - Watson, I.M.

AU - Dawson, M.D.

AU - Deatcher, C.J.

AU - Kim, H.S.

AU - Kim, K.S.

AU - Liu, C.

PY - 2001/6/13

Y1 - 2001/6/13

N2 - This paper covers in-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. It was presented at the 2001 European workshop on metalorganic vapour phase epitaxy.

AB - This paper covers in-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. It was presented at the 2001 European workshop on metalorganic vapour phase epitaxy.

KW - reflectometry

KW - GaN

KW - growth initiation

KW - inGaN

KW - structure growth

KW - ELOG

M3 - Paper

ER -

Watson IM, Dawson MD, Deatcher CJ, Kim HS, Kim KS, Liu C. In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. 2001. Paper presented at European workshop on metalorganic vapour phase epitaxy, Wrexham, United Kingdom, .