In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG

I.M. Watson, M.D. Dawson, C.J. Deatcher, H.S. Kim, K.S. Kim, C. Liu

Research output: Contribution to conferencePaper

Abstract

This paper covers in-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. It was presented at the 2001 European workshop on metalorganic vapour phase epitaxy.
Original languageEnglish
Publication statusUnpublished - 13 Jun 2001
EventEuropean workshop on metalorganic vapour phase epitaxy - Wrexham, United Kingdom
Duration: 10 Jun 200113 Jun 2001

Conference

ConferenceEuropean workshop on metalorganic vapour phase epitaxy
CityWrexham, United Kingdom
Period10/06/0113/06/01

Keywords

  • reflectometry
  • GaN
  • growth initiation
  • inGaN
  • structure growth
  • ELOG

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