In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope

Dongyu Tian, Zongwei Xu, Lei Liu, Zhanqi Zhou, Junjie Zhang, Xuesen Zhao, Alexander Hartmaier, Bing Liu, Le Song, Xichun Luo

Research output: Contribution to journalArticlepeer-review

Abstract

Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-ductile transition. In the present work, we elucidated the nanometric cutting mechanisms of 3C-SiC by performing in situ nanometric cutting experiments under scanning electron microscope (SEM), as well as post-characterization by electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). In particular, a new method based on the combination of image processing technology and SEM online observation was proposed to achieve in situ measurement of cutting force with an uncertainty less than 1 mN. Furthermore, the cutting cross-section was characterized by atomic force microscope (AFM) to access the specific cutting energy. The results revealed that the specific cutting energy increase non-linearly with the decrease of cutting depth due to the size effect of cutting tool in nanometric cutting. The high-pressure phase transformation (HPPT) may play the major role in 3C-SiC ductile machining under the parameters of this experiment.

Original languageEnglish
Pages (from-to)2299-2312
Number of pages14
JournalInternational Journal of Advanced Manufacturing Technology
Volume115
Issue number7-8
Early online date22 May 2021
DOIs
Publication statusPublished - Aug 2021

Keywords

  • cubic silicon carbide
  • diamond cutting
  • in situ SEM observation
  • phase transformation
  • surface integrity

Fingerprint

Dive into the research topics of 'In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope'. Together they form a unique fingerprint.

Cite this