In-situ evaluation of the anodic oxide growth on CdxHg1-xTe (MCT) using ellipsometry and second harmonic generation

A.W. Wark, L.E.A. Berlouis, F.R. Cruickshank, David Pugh, P.F. Brevet

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In-situ measurements of ellipsometry and second harmonic generation (SHG) were carried out to monitor the electrochemical growth of native anodic oxide films on Hg1−xCdxTe (MCT). Growth of the anodic oxide was performed using two different methods viz., by linear sweep voltammetry and by applying a constant current density. The influence of scan rate and the magnitude of the applied current density on the properties of the growing films were examined. From the ellipsometry data, we have shown that the measured refractive index value of 2.19 for the oxide film remains unchanged for moderate and high oxide growth rates. Only at very slow growth rates were significant increases in the refractive index observed (n=2.4), indicating an increase in the compactness of the layer. For film thicknesses in excess of ∼1200 Å, a non-zero value for the extinction coefficient was found, indicating the incorporation of HgTe particles within the anodic oxide film. SHG rotational anisotropy measurements, performed on the MCT with and without an anodic oxide film showed only the four-fold symmetry associated with the MCT and so confirmed that the oxide was centrosymmetric. However, an increase in the SH intensity was observed in the presence of the oxide and this has been attributed to multiple reflections in the thin oxide film and also to the increase in the χ(2) non-linear susceptibility tensor as a result of charge accumulation at the MCT/anodic oxide interface.
LanguageEnglish
Pages648-653
Number of pages6
JournalJournal of Electronic Materials
Volume29
Issue number6
DOIs
Publication statusPublished - 2000

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Ellipsometry
Harmonic generation
Oxides
Oxide films
ellipsometry
oxide films
harmonic generations
oxides
evaluation
Growth
Refractive index
Current density
refractivity
current density
Refractometry
void ratio
Film growth
Voltammetry
in situ measurement
Tensors

Keywords

  • in-situ evaluation
  • anodic oxide growth
  • CdxHg1-xTe (MCT)
  • second harmonic generation
  • ellipsometry

Cite this

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title = "In-situ evaluation of the anodic oxide growth on CdxHg1-xTe (MCT) using ellipsometry and second harmonic generation",
abstract = "In-situ measurements of ellipsometry and second harmonic generation (SHG) were carried out to monitor the electrochemical growth of native anodic oxide films on Hg1−xCdxTe (MCT). Growth of the anodic oxide was performed using two different methods viz., by linear sweep voltammetry and by applying a constant current density. The influence of scan rate and the magnitude of the applied current density on the properties of the growing films were examined. From the ellipsometry data, we have shown that the measured refractive index value of 2.19 for the oxide film remains unchanged for moderate and high oxide growth rates. Only at very slow growth rates were significant increases in the refractive index observed (n=2.4), indicating an increase in the compactness of the layer. For film thicknesses in excess of ∼1200 {\AA}, a non-zero value for the extinction coefficient was found, indicating the incorporation of HgTe particles within the anodic oxide film. SHG rotational anisotropy measurements, performed on the MCT with and without an anodic oxide film showed only the four-fold symmetry associated with the MCT and so confirmed that the oxide was centrosymmetric. However, an increase in the SH intensity was observed in the presence of the oxide and this has been attributed to multiple reflections in the thin oxide film and also to the increase in the χ(2) non-linear susceptibility tensor as a result of charge accumulation at the MCT/anodic oxide interface.",
keywords = "in-situ evaluation, anodic oxide growth, CdxHg1-xTe (MCT) , second harmonic generation, ellipsometry",
author = "A.W. Wark and L.E.A. Berlouis and F.R. Cruickshank and David Pugh and P.F. Brevet",
year = "2000",
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journal = "Journal of Electronic Materials",
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In-situ evaluation of the anodic oxide growth on CdxHg1-xTe (MCT) using ellipsometry and second harmonic generation. / Wark, A.W.; Berlouis, L.E.A.; Cruickshank, F.R.; Pugh, David; Brevet, P.F.

In: Journal of Electronic Materials , Vol. 29, No. 6, 2000, p. 648-653.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In-situ evaluation of the anodic oxide growth on CdxHg1-xTe (MCT) using ellipsometry and second harmonic generation

AU - Wark, A.W.

AU - Berlouis, L.E.A.

AU - Cruickshank, F.R.

AU - Pugh, David

AU - Brevet, P.F.

PY - 2000

Y1 - 2000

N2 - In-situ measurements of ellipsometry and second harmonic generation (SHG) were carried out to monitor the electrochemical growth of native anodic oxide films on Hg1−xCdxTe (MCT). Growth of the anodic oxide was performed using two different methods viz., by linear sweep voltammetry and by applying a constant current density. The influence of scan rate and the magnitude of the applied current density on the properties of the growing films were examined. From the ellipsometry data, we have shown that the measured refractive index value of 2.19 for the oxide film remains unchanged for moderate and high oxide growth rates. Only at very slow growth rates were significant increases in the refractive index observed (n=2.4), indicating an increase in the compactness of the layer. For film thicknesses in excess of ∼1200 Å, a non-zero value for the extinction coefficient was found, indicating the incorporation of HgTe particles within the anodic oxide film. SHG rotational anisotropy measurements, performed on the MCT with and without an anodic oxide film showed only the four-fold symmetry associated with the MCT and so confirmed that the oxide was centrosymmetric. However, an increase in the SH intensity was observed in the presence of the oxide and this has been attributed to multiple reflections in the thin oxide film and also to the increase in the χ(2) non-linear susceptibility tensor as a result of charge accumulation at the MCT/anodic oxide interface.

AB - In-situ measurements of ellipsometry and second harmonic generation (SHG) were carried out to monitor the electrochemical growth of native anodic oxide films on Hg1−xCdxTe (MCT). Growth of the anodic oxide was performed using two different methods viz., by linear sweep voltammetry and by applying a constant current density. The influence of scan rate and the magnitude of the applied current density on the properties of the growing films were examined. From the ellipsometry data, we have shown that the measured refractive index value of 2.19 for the oxide film remains unchanged for moderate and high oxide growth rates. Only at very slow growth rates were significant increases in the refractive index observed (n=2.4), indicating an increase in the compactness of the layer. For film thicknesses in excess of ∼1200 Å, a non-zero value for the extinction coefficient was found, indicating the incorporation of HgTe particles within the anodic oxide film. SHG rotational anisotropy measurements, performed on the MCT with and without an anodic oxide film showed only the four-fold symmetry associated with the MCT and so confirmed that the oxide was centrosymmetric. However, an increase in the SH intensity was observed in the presence of the oxide and this has been attributed to multiple reflections in the thin oxide film and also to the increase in the χ(2) non-linear susceptibility tensor as a result of charge accumulation at the MCT/anodic oxide interface.

KW - in-situ evaluation

KW - anodic oxide growth

KW - CdxHg1-xTe (MCT)

KW - second harmonic generation

KW - ellipsometry

U2 - 10.1007/s11664-000-0199-9

DO - 10.1007/s11664-000-0199-9

M3 - Article

VL - 29

SP - 648

EP - 653

JO - Journal of Electronic Materials

T2 - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -