In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride

J.M. Fisher, L.E.A. Berlouis, B.N. Rospendowski, P.J. Hall, M.G. Astles

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8% Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.
Original languageEnglish
Pages (from-to)1459-1464
Number of pages5
JournalSemiconductor Science and Technology
Volume8
Issue number7
DOIs
Publication statusPublished - Jul 1993

Keywords

  • condensed matter
  • semiconductors
  • surfaces
  • interfaces and thin films
  • cadmium telluride films
  • electrodeposited cadmium

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