In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride

J.M. Fisher; L.E.A. Berlouis; B.N. Rospendowski; P.J. Hall; M.G. Astles

doi:10.1088/0268-1242/8/7/042

In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride

J.M. Fisher, L.E.A. Berlouis, B.N. Rospendowski, P.J. Hall, M.G. Astles

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8% Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.

Original language	English
Pages (from-to)	1459-1464
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	8
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/8/7/042
Publication status	Published - Jul 1993

Keywords

condensed matter
semiconductors
surfaces
interfaces and thin films
cadmium telluride films
electrodeposited cadmium

Access to Document

10.1088/0268-1242/8/7/042

Cite this

@article{d8439f0f57ed4469b50b5cd49221065c,

title = "In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride",

abstract = "The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8% Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.",

keywords = "condensed matter, semiconductors, surfaces, interfaces and thin films, cadmium telluride films, electrodeposited cadmium",

author = "J.M. Fisher and L.E.A. Berlouis and B.N. Rospendowski and P.J. Hall and M.G. Astles",

year = "1993",

month = jul,

doi = "10.1088/0268-1242/8/7/042",

language = "English",

volume = "8",

pages = "1459--1464",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

number = "7",

}

TY - JOUR

T1 - In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride

AU - Fisher, J.M.

AU - Berlouis, L.E.A.

AU - Rospendowski, B.N.

AU - Hall, P.J.

AU - Astles, M.G.

PY - 1993/7

Y1 - 1993/7

N2 - The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8% Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.

AB - The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8% Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.

KW - condensed matter

KW - semiconductors

KW - surfaces

KW - interfaces and thin films

KW - cadmium telluride films

KW - electrodeposited cadmium

UR - http://dx.doi.org/10.1088/0268-1242/8/7/042

U2 - 10.1088/0268-1242/8/7/042

DO - 10.1088/0268-1242/8/7/042

M3 - Article

SN - 0268-1242

VL - 8

SP - 1459

EP - 1464

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

ER -

In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this