In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride

J.M. Fisher, L.E.A. Berlouis, B.N. Rospendowski, P.J. Hall, M.G. Astles

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8% Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.
Original languageEnglish
Pages (from-to)1459-1464
Number of pages5
JournalSemiconductor Science and Technology
Volume8
Issue number7
DOIs
Publication statusPublished - Jul 1993

Fingerprint

mercury cadmium tellurides
Cadmium telluride
cadmium tellurides
Mercury (metal)
Ellipsometry
Cadmium
ellipsometry
Electrodeposition
Energy dispersive spectroscopy
electrodeposition
Tellurium
Energy dispersive X ray analysis
Film growth
tellurium
Raman spectroscopy
Differential scanning calorimetry
mercury cadmium telluride
cadmium telluride
heat measurement
aqueous solutions

Keywords

  • condensed matter
  • semiconductors
  • surfaces
  • interfaces and thin films
  • cadmium telluride films
  • electrodeposited cadmium

Cite this

Fisher, J.M. ; Berlouis, L.E.A. ; Rospendowski, B.N. ; Hall, P.J. ; Astles, M.G. / In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride. In: Semiconductor Science and Technology. 1993 ; Vol. 8, No. 7. pp. 1459-1464.
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abstract = "The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8{\%} Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.",
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In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride. / Fisher, J.M.; Berlouis, L.E.A.; Rospendowski, B.N.; Hall, P.J.; Astles, M.G.

In: Semiconductor Science and Technology, Vol. 8, No. 7, 07.1993, p. 1459-1464.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride

AU - Fisher, J.M.

AU - Berlouis, L.E.A.

AU - Rospendowski, B.N.

AU - Hall, P.J.

AU - Astles, M.G.

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N2 - The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8% Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.

AB - The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8% Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.

KW - condensed matter

KW - semiconductors

KW - surfaces

KW - interfaces and thin films

KW - cadmium telluride films

KW - electrodeposited cadmium

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