In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives

Bing Ji, Xueguan Song, Wenping Cao, Volker Pickert, Yihua Hu, John William Mackersie, S. Gareth Pierce

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit.

LanguageEnglish
Article number6804693
Pages1535-1543
Number of pages9
JournalIEEE Transactions on Power Electronics
Volume30
Issue number3
DOIs
Publication statusPublished - 23 Apr 2014

Fingerprint

Insulated gate bipolar transistors (IGBT)
Electric vehicles
Soldering alloys
Fatigue of materials
Condition monitoring
Health
Acoustic microscopes
Thermal cycling
Temperature sensors
Temperature
Hardware
Networks (circuits)
Hot Temperature

Keywords

  • electric vehicles (EVs)
  • fault diagnosis
  • insulated gate bipolar transistors (IGBTs)
  • prognostics and health management
  • reliability
  • thermal variable measurement

Cite this

Ji, Bing ; Song, Xueguan ; Cao, Wenping ; Pickert, Volker ; Hu, Yihua ; Mackersie, John William ; Pierce, S. Gareth. / In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives. In: IEEE Transactions on Power Electronics. 2014 ; Vol. 30, No. 3. pp. 1535-1543.
@article{2296875bc9b04e469b335f46500deacb,
title = "In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives",
abstract = "This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit.",
keywords = "electric vehicles (EVs), fault diagnosis, insulated gate bipolar transistors (IGBTs), prognostics and health management, reliability, thermal variable measurement",
author = "Bing Ji and Xueguan Song and Wenping Cao and Volker Pickert and Yihua Hu and Mackersie, {John William} and Pierce, {S. Gareth}",
year = "2014",
month = "4",
day = "23",
doi = "10.1109/TPEL.2014.2318991",
language = "English",
volume = "30",
pages = "1535--1543",
journal = "IEEE Transactions on Power Electronics",
issn = "0885-8993",
number = "3",

}

In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives. / Ji, Bing; Song, Xueguan; Cao, Wenping; Pickert, Volker; Hu, Yihua; Mackersie, John William; Pierce, S. Gareth.

In: IEEE Transactions on Power Electronics, Vol. 30, No. 3, 6804693, 23.04.2014, p. 1535-1543.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives

AU - Ji, Bing

AU - Song, Xueguan

AU - Cao, Wenping

AU - Pickert, Volker

AU - Hu, Yihua

AU - Mackersie, John William

AU - Pierce, S. Gareth

PY - 2014/4/23

Y1 - 2014/4/23

N2 - This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit.

AB - This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit.

KW - electric vehicles (EVs)

KW - fault diagnosis

KW - insulated gate bipolar transistors (IGBTs)

KW - prognostics and health management

KW - reliability

KW - thermal variable measurement

UR - http://www.scopus.com/inward/record.url?scp=84908250542&partnerID=8YFLogxK

UR - http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=63

U2 - 10.1109/TPEL.2014.2318991

DO - 10.1109/TPEL.2014.2318991

M3 - Article

VL - 30

SP - 1535

EP - 1543

JO - IEEE Transactions on Power Electronics

T2 - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

SN - 0885-8993

IS - 3

M1 - 6804693

ER -