In situ and ex situ evaluation of mechanisms of lateral epitaxial overgrowth

I.M. Watson, C. Liu, K.S. Kim, H.S. Kim, C.J. Deatcher, J.M. Girkin, M.D. Dawson, P.R. Edwards, C. Trager-Cowan, R.W. Martin

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Metal organic chemical vapour deposition was used for lateral epitaxial overgrowth of GaN on stripe-patterned SiO2 masks 200 and 500 nm in thickness. Overgrowths were conducted under constant conditions, at a nominal temperature of 1140 degreesC. Mechanistic aspects were investigated by a combination of ex situ imaging methods and in situ optical reflectometry. Short growth times resulted in non-coalesced GaN with horizontal (0001) and sloping [1122] side facets. but vertical [1120] facets completely replaced the [1122] facets before coalescence. Reflectance versus time plots from stripe-masked areas suggest an interplay of two distinct interference effects. These data indicate a constant vertical growth rate of approximate to2.6 mum/h after coalescence, and are consistent with enhancement in growth rate in the early stages. associated with transport of precursor species from SiO2 mask regions.
Original languageEnglish
Pages (from-to)743-746
Number of pages3
JournalPhysica Status Solidi A
Issue number2
Publication statusPublished - Nov 2001


  • materials science
  • organic chemistry
  • applied physics
  • condensed matter


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