Abstract
| Language | English |
|---|---|
| Pages | 743-746 |
| Number of pages | 3 |
| Journal | Physica Status Solidi A |
| Volume | 188 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Nov 2001 |
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Keywords
- materials science
- organic chemistry
- applied physics
- condensed matter
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In situ and ex situ evaluation of mechanisms of lateral epitaxial overgrowth. / Watson, I.M.; Liu, C.; Kim, K.S.; Kim, H.S.; Deatcher, C.J.; Girkin, J.M.; Dawson, M.D.; Edwards, P.R.; Trager-Cowan, C.; Martin, R.W.
In: Physica Status Solidi A, Vol. 188, No. 2, 11.2001, p. 743-746.Research output: Contribution to journal › Article
TY - JOUR
T1 - In situ and ex situ evaluation of mechanisms of lateral epitaxial overgrowth
AU - Watson, I.M.
AU - Liu, C.
AU - Kim, K.S.
AU - Kim, H.S.
AU - Deatcher, C.J.
AU - Girkin, J.M.
AU - Dawson, M.D.
AU - Edwards, P.R.
AU - Trager-Cowan, C.
AU - Martin, R.W.
PY - 2001/11
Y1 - 2001/11
N2 - Metal organic chemical vapour deposition was used for lateral epitaxial overgrowth of GaN on stripe-patterned SiO2 masks 200 and 500 nm in thickness. Overgrowths were conducted under constant conditions, at a nominal temperature of 1140 degreesC. Mechanistic aspects were investigated by a combination of ex situ imaging methods and in situ optical reflectometry. Short growth times resulted in non-coalesced GaN with horizontal (0001) and sloping [1122] side facets. but vertical [1120] facets completely replaced the [1122] facets before coalescence. Reflectance versus time plots from stripe-masked areas suggest an interplay of two distinct interference effects. These data indicate a constant vertical growth rate of approximate to2.6 mum/h after coalescence, and are consistent with enhancement in growth rate in the early stages. associated with transport of precursor species from SiO2 mask regions.
AB - Metal organic chemical vapour deposition was used for lateral epitaxial overgrowth of GaN on stripe-patterned SiO2 masks 200 and 500 nm in thickness. Overgrowths were conducted under constant conditions, at a nominal temperature of 1140 degreesC. Mechanistic aspects were investigated by a combination of ex situ imaging methods and in situ optical reflectometry. Short growth times resulted in non-coalesced GaN with horizontal (0001) and sloping [1122] side facets. but vertical [1120] facets completely replaced the [1122] facets before coalescence. Reflectance versus time plots from stripe-masked areas suggest an interplay of two distinct interference effects. These data indicate a constant vertical growth rate of approximate to2.6 mum/h after coalescence, and are consistent with enhancement in growth rate in the early stages. associated with transport of precursor species from SiO2 mask regions.
KW - materials science
KW - organic chemistry
KW - applied physics
KW - condensed matter
UR - http://www3.interscience.wiley.com/cgi-bin/fulltext/88013813/PDFSTART
UR - http://dx.doi.org/10.1002/1521-396X(200112)188:2<743::AID-PSSA743>3.0.CO;2-B
U2 - 10.1002/1521-396X(200112)188:2<743::AID-PSSA743>3.0.CO;2-B
DO - 10.1002/1521-396X(200112)188:2<743::AID-PSSA743>3.0.CO;2-B
M3 - Article
VL - 188
SP - 743
EP - 746
JO - Physica Status Solidi A
T2 - Physica Status Solidi A
JF - Physica Status Solidi A
SN - 1862-6300
IS - 2
ER -