In situ and ex situ evaluation of mechanisms of lateral epitaxial overgrowth

I.M. Watson, C. Liu, K.S. Kim, H.S. Kim, C.J. Deatcher, J.M. Girkin, M.D. Dawson, P.R. Edwards, C. Trager-Cowan, R.W. Martin

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Metal organic chemical vapour deposition was used for lateral epitaxial overgrowth of GaN on stripe-patterned SiO2 masks 200 and 500 nm in thickness. Overgrowths were conducted under constant conditions, at a nominal temperature of 1140 degreesC. Mechanistic aspects were investigated by a combination of ex situ imaging methods and in situ optical reflectometry. Short growth times resulted in non-coalesced GaN with horizontal (0001) and sloping [1122] side facets. but vertical [1120] facets completely replaced the [1122] facets before coalescence. Reflectance versus time plots from stripe-masked areas suggest an interplay of two distinct interference effects. These data indicate a constant vertical growth rate of approximate to2.6 mum/h after coalescence, and are consistent with enhancement in growth rate in the early stages. associated with transport of precursor species from SiO2 mask regions.
LanguageEnglish
Pages743-746
Number of pages3
JournalPhysica Status Solidi A
Volume188
Issue number2
DOIs
Publication statusPublished - Nov 2001

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Coalescence
Masks
flat surfaces
Organic Chemicals
coalescing
evaluation
Organic chemicals
masks
Chemical vapor deposition
Metals
Imaging techniques
metalorganic chemical vapor deposition
plots
reflectance
interference
augmentation
Temperature
temperature

Keywords

  • materials science
  • organic chemistry
  • applied physics
  • condensed matter

Cite this

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title = "In situ and ex situ evaluation of mechanisms of lateral epitaxial overgrowth",
abstract = "Metal organic chemical vapour deposition was used for lateral epitaxial overgrowth of GaN on stripe-patterned SiO2 masks 200 and 500 nm in thickness. Overgrowths were conducted under constant conditions, at a nominal temperature of 1140 degreesC. Mechanistic aspects were investigated by a combination of ex situ imaging methods and in situ optical reflectometry. Short growth times resulted in non-coalesced GaN with horizontal (0001) and sloping [1122] side facets. but vertical [1120] facets completely replaced the [1122] facets before coalescence. Reflectance versus time plots from stripe-masked areas suggest an interplay of two distinct interference effects. These data indicate a constant vertical growth rate of approximate to2.6 mum/h after coalescence, and are consistent with enhancement in growth rate in the early stages. associated with transport of precursor species from SiO2 mask regions.",
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author = "I.M. Watson and C. Liu and K.S. Kim and H.S. Kim and C.J. Deatcher and J.M. Girkin and M.D. Dawson and P.R. Edwards and C. Trager-Cowan and R.W. Martin",
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In situ and ex situ evaluation of mechanisms of lateral epitaxial overgrowth. / Watson, I.M.; Liu, C.; Kim, K.S.; Kim, H.S.; Deatcher, C.J.; Girkin, J.M.; Dawson, M.D.; Edwards, P.R.; Trager-Cowan, C.; Martin, R.W.

In: Physica Status Solidi A, Vol. 188, No. 2, 11.2001, p. 743-746.

Research output: Contribution to journalArticle

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AU - Watson, I.M.

AU - Liu, C.

AU - Kim, K.S.

AU - Kim, H.S.

AU - Deatcher, C.J.

AU - Girkin, J.M.

AU - Dawson, M.D.

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AU - Martin, R.W.

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