In-rich AlxIn1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

A Núñez-Cascajero, S Valdueza-Felip, L Monteagudo-Lerma, E Monroy, E Taylor-Shaw, R W Martin, M González-Herráez, F B Naranjo

Research output: Contribution to journalArticle

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Abstract

The structural, morphological, electrical and optical properties of In-rich AlxIn1−xN(0 < x < 0.39) layers grown by reactive radio-frequency (RF) sputtering on sapphire areinvestigated as a function of the deposition parameters. The RF power applied to the aluminumtarget (0 W–150 W) and substrate temperature (300 °C–550 °C) are varied. X-ray diffractionmeasurements reveal that all samples have a wurtzite crystallographic structure oriented withthe c-axis along the growth direction. The aluminum composition is tuned by changing thepower applied to the aluminum target while keeping the power applied to the indium targetfixed at 40 W. When increasing the Al content from 0 to 0.39, the room-temperature opticalband gap is observed to blue-shift from 1.76 eV to 2.0 eV, strongly influenced by the Burstein–Moss effect. Increasing the substrate temperature, results in an evolution of the morphologyfrom closely-packed columnar to compact. For a substrate temperature of 500 °C and RFpower for Al of 150 W, compact Al0.39In0.61N films with a smooth surface (root-mean-squaresurface roughness below 1 nm) are produced.
LanguageEnglish
Article number065101
Number of pages9
JournalJournal of Physics D: Applied Physics
Volume50
Issue number6
Early online date14 Dec 2016
DOIs
Publication statusPublished - 11 Jan 2017

Fingerprint

Aluminum Oxide
Sapphire
Surface properties
Sputtering
radio frequencies
sapphire
sputtering
Aluminum
aluminum
Bryophytes
Substrates
blue shift
wurtzite
Temperature
Indium
temperature
indium
roughness
electrical properties
optical properties

Keywords

  • III-nitrides
  • AlInN
  • RF-sputtering
  • semiconductor

Cite this

Núñez-Cascajero, A ; Valdueza-Felip, S ; Monteagudo-Lerma, L ; Monroy, E ; Taylor-Shaw, E ; Martin, R W ; González-Herráez, M ; Naranjo, F B. / In-rich AlxIn1−xN grown by RF-sputtering on sapphire : from closely-packed columnar to high-surface quality compact layers. In: Journal of Physics D: Applied Physics. 2017 ; Vol. 50, No. 6.
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abstract = "The structural, morphological, electrical and optical properties of In-rich AlxIn1−xN(0 < x < 0.39) layers grown by reactive radio-frequency (RF) sputtering on sapphire areinvestigated as a function of the deposition parameters. The RF power applied to the aluminumtarget (0 W–150 W) and substrate temperature (300 °C–550 °C) are varied. X-ray diffractionmeasurements reveal that all samples have a wurtzite crystallographic structure oriented withthe c-axis along the growth direction. The aluminum composition is tuned by changing thepower applied to the aluminum target while keeping the power applied to the indium targetfixed at 40 W. When increasing the Al content from 0 to 0.39, the room-temperature opticalband gap is observed to blue-shift from 1.76 eV to 2.0 eV, strongly influenced by the Burstein–Moss effect. Increasing the substrate temperature, results in an evolution of the morphologyfrom closely-packed columnar to compact. For a substrate temperature of 500 °C and RFpower for Al of 150 W, compact Al0.39In0.61N films with a smooth surface (root-mean-squaresurface roughness below 1 nm) are produced.",
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Núñez-Cascajero, A, Valdueza-Felip, S, Monteagudo-Lerma, L, Monroy, E, Taylor-Shaw, E, Martin, RW, González-Herráez, M & Naranjo, FB 2017, 'In-rich AlxIn1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers' Journal of Physics D: Applied Physics, vol. 50, no. 6, 065101. https://doi.org/10.1088/1361-6463/aa53d5

In-rich AlxIn1−xN grown by RF-sputtering on sapphire : from closely-packed columnar to high-surface quality compact layers. / Núñez-Cascajero, A; Valdueza-Felip, S; Monteagudo-Lerma, L; Monroy, E; Taylor-Shaw, E; Martin, R W; González-Herráez, M; Naranjo, F B.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 6, 065101, 11.01.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In-rich AlxIn1−xN grown by RF-sputtering on sapphire

T2 - Journal of Physics D: Applied Physics

AU - Núñez-Cascajero, A

AU - Valdueza-Felip, S

AU - Monteagudo-Lerma, L

AU - Monroy, E

AU - Taylor-Shaw, E

AU - Martin, R W

AU - González-Herráez, M

AU - Naranjo, F B

PY - 2017/1/11

Y1 - 2017/1/11

N2 - The structural, morphological, electrical and optical properties of In-rich AlxIn1−xN(0 < x < 0.39) layers grown by reactive radio-frequency (RF) sputtering on sapphire areinvestigated as a function of the deposition parameters. The RF power applied to the aluminumtarget (0 W–150 W) and substrate temperature (300 °C–550 °C) are varied. X-ray diffractionmeasurements reveal that all samples have a wurtzite crystallographic structure oriented withthe c-axis along the growth direction. The aluminum composition is tuned by changing thepower applied to the aluminum target while keeping the power applied to the indium targetfixed at 40 W. When increasing the Al content from 0 to 0.39, the room-temperature opticalband gap is observed to blue-shift from 1.76 eV to 2.0 eV, strongly influenced by the Burstein–Moss effect. Increasing the substrate temperature, results in an evolution of the morphologyfrom closely-packed columnar to compact. For a substrate temperature of 500 °C and RFpower for Al of 150 W, compact Al0.39In0.61N films with a smooth surface (root-mean-squaresurface roughness below 1 nm) are produced.

AB - The structural, morphological, electrical and optical properties of In-rich AlxIn1−xN(0 < x < 0.39) layers grown by reactive radio-frequency (RF) sputtering on sapphire areinvestigated as a function of the deposition parameters. The RF power applied to the aluminumtarget (0 W–150 W) and substrate temperature (300 °C–550 °C) are varied. X-ray diffractionmeasurements reveal that all samples have a wurtzite crystallographic structure oriented withthe c-axis along the growth direction. The aluminum composition is tuned by changing thepower applied to the aluminum target while keeping the power applied to the indium targetfixed at 40 W. When increasing the Al content from 0 to 0.39, the room-temperature opticalband gap is observed to blue-shift from 1.76 eV to 2.0 eV, strongly influenced by the Burstein–Moss effect. Increasing the substrate temperature, results in an evolution of the morphologyfrom closely-packed columnar to compact. For a substrate temperature of 500 °C and RFpower for Al of 150 W, compact Al0.39In0.61N films with a smooth surface (root-mean-squaresurface roughness below 1 nm) are produced.

KW - III-nitrides

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KW - RF-sputtering

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JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

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