In-plane photoconductivity in amorphous silicon doping multilayers

J.P. Conde, M. Silva, V. Chu, Helena Gleskova, K. Vasanth, S. Wagner, D. Shen, P. Popovic, S. Grebner, R. Schwarz

Research output: Contribution to journalArticle

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Abstract

We prepared amorphous Si p-i-p-i and n-4-n-i doping multilayers to study their in-plane carrier transport and interfacial defect densities. The structures were grown using glow discharge or electron-cyclotron-resonance-enhanced chemical vapour deposition. We measured the following: composition by secondary-ion mass spectrometry; transport by dark conductivity SsGd and its thermal activation energy, by continuous-wave photoconductivity SsGph as a function of intensity and wavelength, and also by photoconductive decay; defect density by photothermal deflection spectroscopy (PDS) and the constant-photocurrent method (CPM). SsGd is dominated by the doped layers. The intensity dependence of SsGph suggests that it also is controlled by the doped layers. The fast component of the photoconductivity response time is comparable with that of the doped bulk. The PDS spectra of the multilayers are nearly identical with those of the bulk doped hydrogenated amorphous silicon. The pronounced wavelength dependence of SsGph renders CPM sensitive to the i layer plus the p-i or n-i interfacial defects. The interfacial defects are produced by dopants carried over from the doped to the i layers. Their area density in the multilayers is proportional to the number of interfaces.
Original languageEnglish
Pages (from-to)331-347
Number of pages17
Journal Philosophical Magazine B
Volume74
Issue number4
DOIs
Publication statusPublished - 1996

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Photoconductivity
Amorphous silicon
photoconductivity
amorphous silicon
Multilayers
Defect density
Doping (additives)
Photocurrents
photothermal deflection spectroscopy
defects
Spectroscopy
photocurrents
Wavelength
Defects
Electron cyclotron resonance
Carrier transport
Glow discharges
Secondary ion mass spectrometry
Chemical vapor deposition
Activation energy

Keywords

  • photoconductivity
  • amorphous silicon doping
  • amorphous silicon

Cite this

Conde, J. P., Silva, M., Chu, V., Gleskova, H., Vasanth, K., Wagner, S., ... Schwarz, R. (1996). In-plane photoconductivity in amorphous silicon doping multilayers. Philosophical Magazine B, 74(4), 331-347. https://doi.org/10.1080/01418639608240338
Conde, J.P. ; Silva, M. ; Chu, V. ; Gleskova, Helena ; Vasanth, K. ; Wagner, S. ; Shen, D. ; Popovic, P. ; Grebner, S. ; Schwarz, R. / In-plane photoconductivity in amorphous silicon doping multilayers. In: Philosophical Magazine B. 1996 ; Vol. 74, No. 4. pp. 331-347.
@article{17fe460436c64dcda4fbff300a2157ed,
title = "In-plane photoconductivity in amorphous silicon doping multilayers",
abstract = "We prepared amorphous Si p-i-p-i and n-4-n-i doping multilayers to study their in-plane carrier transport and interfacial defect densities. The structures were grown using glow discharge or electron-cyclotron-resonance-enhanced chemical vapour deposition. We measured the following: composition by secondary-ion mass spectrometry; transport by dark conductivity SsGd and its thermal activation energy, by continuous-wave photoconductivity SsGph as a function of intensity and wavelength, and also by photoconductive decay; defect density by photothermal deflection spectroscopy (PDS) and the constant-photocurrent method (CPM). SsGd is dominated by the doped layers. The intensity dependence of SsGph suggests that it also is controlled by the doped layers. The fast component of the photoconductivity response time is comparable with that of the doped bulk. The PDS spectra of the multilayers are nearly identical with those of the bulk doped hydrogenated amorphous silicon. The pronounced wavelength dependence of SsGph renders CPM sensitive to the i layer plus the p-i or n-i interfacial defects. The interfacial defects are produced by dopants carried over from the doped to the i layers. Their area density in the multilayers is proportional to the number of interfaces.",
keywords = "photoconductivity , amorphous silicon doping , amorphous silicon",
author = "J.P. Conde and M. Silva and V. Chu and Helena Gleskova and K. Vasanth and S. Wagner and D. Shen and P. Popovic and S. Grebner and R. Schwarz",
year = "1996",
doi = "10.1080/01418639608240338",
language = "English",
volume = "74",
pages = "331--347",
journal = "Philosophical Magazine B",
issn = "1364-2812",
publisher = "Taylor and Francis Ltd.",
number = "4",

}

Conde, JP, Silva, M, Chu, V, Gleskova, H, Vasanth, K, Wagner, S, Shen, D, Popovic, P, Grebner, S & Schwarz, R 1996, 'In-plane photoconductivity in amorphous silicon doping multilayers', Philosophical Magazine B, vol. 74, no. 4, pp. 331-347. https://doi.org/10.1080/01418639608240338

In-plane photoconductivity in amorphous silicon doping multilayers. / Conde, J.P.; Silva, M.; Chu, V.; Gleskova, Helena; Vasanth, K.; Wagner, S.; Shen, D.; Popovic, P.; Grebner, S.; Schwarz, R.

In: Philosophical Magazine B, Vol. 74, No. 4, 1996, p. 331-347.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In-plane photoconductivity in amorphous silicon doping multilayers

AU - Conde, J.P.

AU - Silva, M.

AU - Chu, V.

AU - Gleskova, Helena

AU - Vasanth, K.

AU - Wagner, S.

AU - Shen, D.

AU - Popovic, P.

AU - Grebner, S.

AU - Schwarz, R.

PY - 1996

Y1 - 1996

N2 - We prepared amorphous Si p-i-p-i and n-4-n-i doping multilayers to study their in-plane carrier transport and interfacial defect densities. The structures were grown using glow discharge or electron-cyclotron-resonance-enhanced chemical vapour deposition. We measured the following: composition by secondary-ion mass spectrometry; transport by dark conductivity SsGd and its thermal activation energy, by continuous-wave photoconductivity SsGph as a function of intensity and wavelength, and also by photoconductive decay; defect density by photothermal deflection spectroscopy (PDS) and the constant-photocurrent method (CPM). SsGd is dominated by the doped layers. The intensity dependence of SsGph suggests that it also is controlled by the doped layers. The fast component of the photoconductivity response time is comparable with that of the doped bulk. The PDS spectra of the multilayers are nearly identical with those of the bulk doped hydrogenated amorphous silicon. The pronounced wavelength dependence of SsGph renders CPM sensitive to the i layer plus the p-i or n-i interfacial defects. The interfacial defects are produced by dopants carried over from the doped to the i layers. Their area density in the multilayers is proportional to the number of interfaces.

AB - We prepared amorphous Si p-i-p-i and n-4-n-i doping multilayers to study their in-plane carrier transport and interfacial defect densities. The structures were grown using glow discharge or electron-cyclotron-resonance-enhanced chemical vapour deposition. We measured the following: composition by secondary-ion mass spectrometry; transport by dark conductivity SsGd and its thermal activation energy, by continuous-wave photoconductivity SsGph as a function of intensity and wavelength, and also by photoconductive decay; defect density by photothermal deflection spectroscopy (PDS) and the constant-photocurrent method (CPM). SsGd is dominated by the doped layers. The intensity dependence of SsGph suggests that it also is controlled by the doped layers. The fast component of the photoconductivity response time is comparable with that of the doped bulk. The PDS spectra of the multilayers are nearly identical with those of the bulk doped hydrogenated amorphous silicon. The pronounced wavelength dependence of SsGph renders CPM sensitive to the i layer plus the p-i or n-i interfacial defects. The interfacial defects are produced by dopants carried over from the doped to the i layers. Their area density in the multilayers is proportional to the number of interfaces.

KW - photoconductivity

KW - amorphous silicon doping

KW - amorphous silicon

U2 - 10.1080/01418639608240338

DO - 10.1080/01418639608240338

M3 - Article

VL - 74

SP - 331

EP - 347

JO - Philosophical Magazine B

JF - Philosophical Magazine B

SN - 1364-2812

IS - 4

ER -