In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes

K. P. O'Donnell, M. E. White, S. Pereira, J. F.W. Mosselmans, N. Grandjean, B. Damilano, J. Massies

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Extended X-ray absorption fine structure (EXAFS) above the In K-edge of luminescent InGaN heterostructures provides a unique probe of local structure on an atomic length scale. Through a process of fitting the experimental spectrum, we can refine a model of the probable configuration (the atom type, co-ordination number and radial separation) of the first few shells of neighbouring atoms in the vicinity of a selected probe atom. We present here, for the first time, the In K-edge EXAFS spectrum of an ultrathin, uncapped 'quantum box' (QB) sample and compare it to results we have obtained previously on thick luminescent InGaN epilayers with a range of composition. While the epilayers resemble simple alloys, more or less, the QB sample reveals itself to consist of a two-phase mixture of InN and dilute InGaN alloy. The use of EXAFS to distinguish the local In environments of different InGaN-based heterostructures is likely to provide key information to unlock the puzzle of the origin of luminescence in these important commercial semiconductors.

Original languageEnglish
Pages (from-to)150-153
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume93
Issue number1-3
DOIs
Publication statusPublished - 30 May 2002

Keywords

  • extended X-ray absorption fine structure
  • InGaN
  • quantum dots

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