Improved current spreading in 370nm AlGaN microring light emitting diodes

H.W. Choi, M.D. Dawson

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.
LanguageEnglish
JournalApplied Physics Letters
Volume86
Issue number053504
DOIs
Publication statusPublished - 2005

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light emitting diodes
ring currents
geometry
microbalances
light emission
high current
output

Keywords

  • photonics
  • optics
  • diodes
  • geometry
  • applied physics

Cite this

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abstract = "The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.",
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author = "H.W. Choi and M.D. Dawson",
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journal = "Applied Physics Letters",
issn = "0003-6951",
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Improved current spreading in 370nm AlGaN microring light emitting diodes. / Choi, H.W.; Dawson, M.D.

In: Applied Physics Letters, Vol. 86, No. 053504, 2005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improved current spreading in 370nm AlGaN microring light emitting diodes

AU - Choi, H.W.

AU - Dawson, M.D.

PY - 2005

Y1 - 2005

N2 - The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.

AB - The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.

KW - photonics

KW - optics

KW - diodes

KW - geometry

KW - applied physics

UR - http://dx.doi.org/10.1063/1.1861130

U2 - 10.1063/1.1861130

DO - 10.1063/1.1861130

M3 - Article

VL - 86

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 053504

ER -