Improved current spreading in 370nm AlGaN microring light emitting diodes

H.W. Choi; M.D. Dawson

doi:10.1063/1.1861130

Improved current spreading in 370nm AlGaN microring light emitting diodes

H.W. Choi, M.D. Dawson

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.

Language	English
Journal	Applied Physics Letters
Volume	86
Issue number	053504
DOIs	10.1063/1.1861130
Publication status	Published - 2005

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light emitting diodes

ring currents

geometry

microbalances

light emission

high current

output

Keywords

photonics
optics
diodes
geometry
applied physics

Cite this

Choi, H. W., & Dawson, M. D. (2005). Improved current spreading in 370nm AlGaN microring light emitting diodes. Applied Physics Letters, 86(053504). https://doi.org/10.1063/1.1861130

Choi, H.W. ; Dawson, M.D. / Improved current spreading in 370nm AlGaN microring light emitting diodes. In: Applied Physics Letters. 2005 ; Vol. 86, No. 053504.

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Choi, HW & Dawson, MD 2005, 'Improved current spreading in 370nm AlGaN microring light emitting diodes' Applied Physics Letters, vol. 86, no. 053504. https://doi.org/10.1063/1.1861130

Improved current spreading in 370nm AlGaN microring light emitting diodes. / Choi, H.W.; Dawson, M.D.

In: Applied Physics Letters, Vol. 86, No. 053504, 2005.

Research output: Contribution to journal › Article

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AU - Dawson, M.D.

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N2 - The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.

AB - The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.

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KW - optics

KW - diodes

KW - geometry

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DO - 10.1063/1.1861130

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JO - Applied Physics Letters

T2 - Applied Physics Letters