Abstract
The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.
| Original language | English |
|---|---|
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 053504 |
| DOIs | |
| Publication status | Published - 2005 |
Keywords
- photonics
- optics
- diodes
- geometry
- applied physics