Improved current spreading in 370nm AlGaN microring light emitting diodes

H.W. Choi, M.D. Dawson

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.
Original languageEnglish
JournalApplied Physics Letters
Issue number053504
Publication statusPublished - 2005


  • photonics
  • optics
  • diodes
  • geometry
  • applied physics

Cite this