Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI2Br for Stable All-Inorganic Perovskite Solar Cells

Sawanta S. Mali; Jyoti V. Patil; Julian A. Steele; Sachin R. Rondiya; Nelson Y. Dzade; Chang Kook Hong

doi:10.1021/acsenergylett.0c02385

Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI2Br for Stable All-Inorganic Perovskite Solar Cells

Sawanta S. Mali^*, Jyoti V. Patil, Julian A. Steele, Sachin R. Rondiya, Nelson Y. Dzade, Chang Kook Hong

^*Corresponding author for this work

Pure And Applied Chemistry

Research output: Contribution to journal › Article › peer-review

87 Citations (Scopus)

Abstract

Mixed-halide CsPbI2Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods and additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted perovskite deposition in ambient condition to obtain high-quality photoactive CsPbI2Br perovskite films and have extended stable device operation using metal cation doping and dopant-free hole-transporting materials. Density functional theory calculations are used to study the structural and optoelectronic properties of the CsPbI2Br perovskite when it is doped with metal cations Eu2+ and In3+. We experimentally incorporated Eu2+ and In3+ metal ions into CsPbI2Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.

Original language	English
Pages (from-to)	778-788
Journal	ACS Energy Letters
Volume	6
DOIs	https://doi.org/10.1021/acsenergylett.0c02385
Publication status	Published - 1 Feb 2021

Funding

This work was supported by the Korea Research FellowshipProgram through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT, and FuturePlanning (2016H1D3A1909289) for awarding an outstandingoverseas young researcher to S.S.M. This work was alsosupported by Korea Research Fellowship Program through theNational Research Foundation of Korea (NRF)(2020R1A2C2004880). This research is also supported bythe National Research Foundation of Korea (NRF) (NRF-2017R1A2B4008117) and (NRF-018R1A6A1A03024334).This work was also supported by the National ResearchFoundation of Korea (NRF) grant funded by the Koreagovernment (MSIT) (2018R1C1B6008218). J.A.S. acknowl-edges ﬁnancial support from the Research Foundation -Flanders (FWO: Grant No. 12Y7221N). The authors thankMrs. Young Hee Jung for providing FIB analysis. Authorswould like to thank Prof. Gustavo de Miguel for valuablediscussion on UV-vis absorption analysis and valuablesuggestions during preparation and revision of this manuscript.S.R.R. and N.Y.D. acknowledge the UK Engineering andPhysical Sciences Research Council (EPSRC) for funding(Grant No. EP/S001395/1)

Keywords

perovskite solar cells
perovskite ﬁlms
metal cation doping

Access to Document

10.1021/acsenergylett.0c02385Licence: CC BY 4.0

mali-et-al-2021-implementing-dopant-free-hole-transporting-layers-and-metal-incorporated-cspbi2br-for-stable-allFinal published version, 3.7 MBLicence: CC BY 4.0

Cite this

@article{dff9080f4654439f86c3e53c7d8e1fe6,

title = "Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI2Br for Stable All-Inorganic Perovskite Solar Cells",

abstract = "Mixed-halide CsPbI2Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods and additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted perovskite deposition in ambient condition to obtain high-quality photoactive CsPbI2Br perovskite films and have extended stable device operation using metal cation doping and dopant-free hole-transporting materials. Density functional theory calculations are used to study the structural and optoelectronic properties of the CsPbI2Br perovskite when it is doped with metal cations Eu2+ and In3+. We experimentally incorporated Eu2+ and In3+ metal ions into CsPbI2Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.",

keywords = "perovskite solar cells, perovskite ﬁlms, metal cation doping",

author = "Mali, {Sawanta S.} and Patil, {Jyoti V.} and Steele, {Julian A.} and Rondiya, {Sachin R.} and Dzade, {Nelson Y.} and Hong, {Chang Kook}",

year = "2021",

month = feb,

day = "1",

doi = "10.1021/acsenergylett.0c02385",

language = "English",

volume = "6",

pages = "778--788",

journal = "ACS Energy Letters",

issn = "2380-8195",

publisher = "American Chemical Society",

}

TY - JOUR

T1 - Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI2Br for Stable All-Inorganic Perovskite Solar Cells

AU - Mali, Sawanta S.

AU - Patil, Jyoti V.

AU - Steele, Julian A.

AU - Rondiya, Sachin R.

AU - Dzade, Nelson Y.

AU - Hong, Chang Kook

PY - 2021/2/1

Y1 - 2021/2/1

N2 - Mixed-halide CsPbI2Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods and additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted perovskite deposition in ambient condition to obtain high-quality photoactive CsPbI2Br perovskite films and have extended stable device operation using metal cation doping and dopant-free hole-transporting materials. Density functional theory calculations are used to study the structural and optoelectronic properties of the CsPbI2Br perovskite when it is doped with metal cations Eu2+ and In3+. We experimentally incorporated Eu2+ and In3+ metal ions into CsPbI2Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.

AB - Mixed-halide CsPbI2Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods and additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted perovskite deposition in ambient condition to obtain high-quality photoactive CsPbI2Br perovskite films and have extended stable device operation using metal cation doping and dopant-free hole-transporting materials. Density functional theory calculations are used to study the structural and optoelectronic properties of the CsPbI2Br perovskite when it is doped with metal cations Eu2+ and In3+. We experimentally incorporated Eu2+ and In3+ metal ions into CsPbI2Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.

KW - perovskite solar cells

KW - perovskite ﬁlms

KW - metal cation doping

U2 - 10.1021/acsenergylett.0c02385

DO - 10.1021/acsenergylett.0c02385

M3 - Article

SN - 2380-8195

VL - 6

SP - 778

EP - 788

JO - ACS Energy Letters

JF - ACS Energy Letters

ER -

Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI2Br for Stable All-Inorganic Perovskite Solar Cells

Abstract

Funding

Keywords

Access to Document

Fingerprint

Cite this