Implantation and annealing studies of Tm-implanted GaN

K. Lorenz*, E. Alves, U. Wahl, T. Monteiro, S. Dalmasso, R. W. Martin, K. P. O'Donnell, R. Vianden

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

15 Citations (Scopus)

Abstract

Thulium ions were implanted into metal organic chemical vapour deposition (MOCVD) grown GaN films with different fluences at implantation temperatures of 20, 400 and 500°C. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated with the Rutherford backscattering (RBS)/channelling technique. We observe that implantation at 500°C considerably reduces the induced lattice damage and increases the amorphisation threshold. The lattice-site location of the implanted ions was determined by performing detailed channelling measurements for the 〈0001〉 and 〈101̄1〉 crystal directions. The results show that Tm ions mainly occupy substitutional Ga-sites directly after implantation and after annealing. The optical properties of the ion-implanted GaN films have been studied by room temperature cathodoluminescence (CL) measurements. Well-defined emission due to intra-4f shell transitions of the Tm3+ ions are observed in the blue spectral range at 477nm and in the near infra-red (IR) at 804nm.

Original languageEnglish
Pages (from-to)97-100
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume105
Issue number1-3
DOIs
Publication statusPublished - 15 Dec 2003
EventEMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic - Strasbourg, Austria
Duration: 10 Jun 200313 Jun 2003

Keywords

  • CL
  • GaN
  • Ion implantation
  • Rare earth
  • RBS/channelling
  • Tm

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