Implantation and annealing studies of Tm-implanted GaN

K. Lorenz, E. Alves, U. Wahl, T. Monteiro, S. Dalmasso, R. W. Martin, K. P. O'Donnell, R. Vianden

Research output: Contribution to journalConference article

13 Citations (Scopus)


Thulium ions were implanted into metal organic chemical vapour deposition (MOCVD) grown GaN films with different fluences at implantation temperatures of 20, 400 and 500°C. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated with the Rutherford backscattering (RBS)/channelling technique. We observe that implantation at 500°C considerably reduces the induced lattice damage and increases the amorphisation threshold. The lattice-site location of the implanted ions was determined by performing detailed channelling measurements for the 〈0001〉 and 〈101̄1〉 crystal directions. The results show that Tm ions mainly occupy substitutional Ga-sites directly after implantation and after annealing. The optical properties of the ion-implanted GaN films have been studied by room temperature cathodoluminescence (CL) measurements. Well-defined emission due to intra-4f shell transitions of the Tm3+ ions are observed in the blue spectral range at 477nm and in the near infra-red (IR) at 804nm.

Original languageEnglish
Pages (from-to)97-100
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
Publication statusPublished - 15 Dec 2003
EventEMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic - Strasbourg, Austria
Duration: 10 Jun 200313 Jun 2003


  • CL
  • GaN
  • Ion implantation
  • Rare earth
  • RBS/channelling
  • Tm

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