Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

J. Márquez-Prieto, M. V. Yakushev, I. Forbes, J. Krustok, P. R. Edwards, V. D. Zhivulko, O. M. Borodavchenko, A. V. Mudryi, M. Dimitrievska, V. Izquierdo-Roca, N. Pearsall, R. W. Martin

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We present structural and optical spectroscopy studies of thin films of Cu2ZnSnSe4 (CZTSe) with strong copper deficiency deposited on Mo/Glass substrates and selenised at 450, 500 or 550 °C. Solar cells fabricated from these films demonstrated efficiencies up to 7.4% for selenisation at 500 °C. Structural analysis based on X-ray diffraction and Raman spectroscopy revealed the presence of SnSe2 in the film selenised at 450 °C but not detected in the films selenised at higher temperatures. A progressive decrease of the Sn and Se content was observed as the selenisation temperature increased. Photoluminescence excitation was used to determine the bandgaps at 4.2 K. Detailed measurements of the temperature and excitation intensity dependencies of the photoluminescence spectra allow the recombination mechanisms of the observed emission bands to be identified as band-to-impurity and band-to-band transitions, and their evolution with selenisation temperature changes to be analysed. The strongest band-to-band transition is recorded in the PL spectra of the film selenised at 500 °C and can be observed from 6 K to room temperature. The compositional and structural changes in the films and their influence on the optoelectronic properties of CZTSe and solar cells are discussed.
LanguageEnglish
Pages42-50
Number of pages9
JournalSolar Energy Materials and Solar Cells
Volume152
Early online date6 Apr 2016
DOIs
Publication statusPublished - 31 Aug 2016

Fingerprint

Structural properties
Optical properties
Solar cells
Photoluminescence
Temperature
Structural analysis
Optoelectronic devices
Raman spectroscopy
Copper
Energy gap
Impurities
X ray diffraction
Glass
Thin films
Substrates

Keywords

  • Cu2ZnSnSe4
  • selenisation
  • optical spectroscopy
  • structure

Cite this

Márquez-Prieto, J. ; Yakushev, M. V. ; Forbes, I. ; Krustok, J. ; Edwards, P. R. ; Zhivulko, V. D. ; Borodavchenko, O. M. ; Mudryi, A. V. ; Dimitrievska, M. ; Izquierdo-Roca, V. ; Pearsall, N. ; Martin, R. W. / Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers. In: Solar Energy Materials and Solar Cells. 2016 ; Vol. 152. pp. 42-50.
@article{e7b873650e4e4ad9997d14848b0feb7d,
title = "Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers",
abstract = "We present structural and optical spectroscopy studies of thin films of Cu2ZnSnSe4 (CZTSe) with strong copper deficiency deposited on Mo/Glass substrates and selenised at 450, 500 or 550 °C. Solar cells fabricated from these films demonstrated efficiencies up to 7.4{\%} for selenisation at 500 °C. Structural analysis based on X-ray diffraction and Raman spectroscopy revealed the presence of SnSe2 in the film selenised at 450 °C but not detected in the films selenised at higher temperatures. A progressive decrease of the Sn and Se content was observed as the selenisation temperature increased. Photoluminescence excitation was used to determine the bandgaps at 4.2 K. Detailed measurements of the temperature and excitation intensity dependencies of the photoluminescence spectra allow the recombination mechanisms of the observed emission bands to be identified as band-to-impurity and band-to-band transitions, and their evolution with selenisation temperature changes to be analysed. The strongest band-to-band transition is recorded in the PL spectra of the film selenised at 500 °C and can be observed from 6 K to room temperature. The compositional and structural changes in the films and their influence on the optoelectronic properties of CZTSe and solar cells are discussed.",
keywords = "Cu2ZnSnSe4, selenisation, optical spectroscopy, structure",
author = "J. M{\'a}rquez-Prieto and Yakushev, {M. V.} and I. Forbes and J. Krustok and Edwards, {P. R.} and Zhivulko, {V. D.} and Borodavchenko, {O. M.} and Mudryi, {A. V.} and M. Dimitrievska and V. Izquierdo-Roca and N. Pearsall and Martin, {R. W.}",
year = "2016",
month = "8",
day = "31",
doi = "10.1016/j.solmat.2016.03.018",
language = "English",
volume = "152",
pages = "42--50",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",

}

Márquez-Prieto, J, Yakushev, MV, Forbes, I, Krustok, J, Edwards, PR, Zhivulko, VD, Borodavchenko, OM, Mudryi, AV, Dimitrievska, M, Izquierdo-Roca, V, Pearsall, N & Martin, RW 2016, 'Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers' Solar Energy Materials and Solar Cells, vol. 152, pp. 42-50. https://doi.org/10.1016/j.solmat.2016.03.018

Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers. / Márquez-Prieto, J.; Yakushev, M. V.; Forbes, I.; Krustok, J.; Edwards, P. R.; Zhivulko, V. D.; Borodavchenko, O. M.; Mudryi, A. V.; Dimitrievska, M.; Izquierdo-Roca, V.; Pearsall, N.; Martin, R. W.

In: Solar Energy Materials and Solar Cells, Vol. 152, 31.08.2016, p. 42-50.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

AU - Márquez-Prieto, J.

AU - Yakushev, M. V.

AU - Forbes, I.

AU - Krustok, J.

AU - Edwards, P. R.

AU - Zhivulko, V. D.

AU - Borodavchenko, O. M.

AU - Mudryi, A. V.

AU - Dimitrievska, M.

AU - Izquierdo-Roca, V.

AU - Pearsall, N.

AU - Martin, R. W.

PY - 2016/8/31

Y1 - 2016/8/31

N2 - We present structural and optical spectroscopy studies of thin films of Cu2ZnSnSe4 (CZTSe) with strong copper deficiency deposited on Mo/Glass substrates and selenised at 450, 500 or 550 °C. Solar cells fabricated from these films demonstrated efficiencies up to 7.4% for selenisation at 500 °C. Structural analysis based on X-ray diffraction and Raman spectroscopy revealed the presence of SnSe2 in the film selenised at 450 °C but not detected in the films selenised at higher temperatures. A progressive decrease of the Sn and Se content was observed as the selenisation temperature increased. Photoluminescence excitation was used to determine the bandgaps at 4.2 K. Detailed measurements of the temperature and excitation intensity dependencies of the photoluminescence spectra allow the recombination mechanisms of the observed emission bands to be identified as band-to-impurity and band-to-band transitions, and their evolution with selenisation temperature changes to be analysed. The strongest band-to-band transition is recorded in the PL spectra of the film selenised at 500 °C and can be observed from 6 K to room temperature. The compositional and structural changes in the films and their influence on the optoelectronic properties of CZTSe and solar cells are discussed.

AB - We present structural and optical spectroscopy studies of thin films of Cu2ZnSnSe4 (CZTSe) with strong copper deficiency deposited on Mo/Glass substrates and selenised at 450, 500 or 550 °C. Solar cells fabricated from these films demonstrated efficiencies up to 7.4% for selenisation at 500 °C. Structural analysis based on X-ray diffraction and Raman spectroscopy revealed the presence of SnSe2 in the film selenised at 450 °C but not detected in the films selenised at higher temperatures. A progressive decrease of the Sn and Se content was observed as the selenisation temperature increased. Photoluminescence excitation was used to determine the bandgaps at 4.2 K. Detailed measurements of the temperature and excitation intensity dependencies of the photoluminescence spectra allow the recombination mechanisms of the observed emission bands to be identified as band-to-impurity and band-to-band transitions, and their evolution with selenisation temperature changes to be analysed. The strongest band-to-band transition is recorded in the PL spectra of the film selenised at 500 °C and can be observed from 6 K to room temperature. The compositional and structural changes in the films and their influence on the optoelectronic properties of CZTSe and solar cells are discussed.

KW - Cu2ZnSnSe4

KW - selenisation

KW - optical spectroscopy

KW - structure

UR - http://www.sciencedirect.com/science/journal/09270248

U2 - 10.1016/j.solmat.2016.03.018

DO - 10.1016/j.solmat.2016.03.018

M3 - Article

VL - 152

SP - 42

EP - 50

JO - Solar Energy Materials and Solar Cells

T2 - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -