Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

J. Márquez-Prieto; M. V. Yakushev; I. Forbes; J. Krustok; P. R. Edwards; V. D. Zhivulko; O. M. Borodavchenko; A. V. Mudryi; M. Dimitrievska; V. Izquierdo-Roca; N. Pearsall; R. W. Martin

doi:10.1016/j.solmat.2016.03.018

Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

J. Márquez-Prieto, M. V. Yakushev, I. Forbes, J. Krustok, P. R. Edwards, V. D. Zhivulko, O. M. Borodavchenko, A. V. Mudryi, M. Dimitrievska, V. Izquierdo-Roca, N. Pearsall, R. W. Martin

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Abstract

We present structural and optical spectroscopy studies of thin films of Cu₂ZnSnSe₄ (CZTSe) with strong copper deficiency deposited on Mo/Glass substrates and selenised at 450, 500 or 550 °C. Solar cells fabricated from these films demonstrated efficiencies up to 7.4% for selenisation at 500 °C. Structural analysis based on X-ray diffraction and Raman spectroscopy revealed the presence of SnSe₂ in the film selenised at 450 °C but not detected in the films selenised at higher temperatures. A progressive decrease of the Sn and Se content was observed as the selenisation temperature increased. Photoluminescence excitation was used to determine the bandgaps at 4.2 K. Detailed measurements of the temperature and excitation intensity dependencies of the photoluminescence spectra allow the recombination mechanisms of the observed emission bands to be identified as band-to-impurity and band-to-band transitions, and their evolution with selenisation temperature changes to be analysed. The strongest band-to-band transition is recorded in the PL spectra of the film selenised at 500 °C and can be observed from 6 K to room temperature. The compositional and structural changes in the films and their influence on the optoelectronic properties of CZTSe and solar cells are discussed.

Original language	English
Pages (from-to)	42-50
Number of pages	9
Journal	Solar Energy Materials and Solar Cells
Volume	152
Early online date	6 Apr 2016
DOIs	https://doi.org/10.1016/j.solmat.2016.03.018
Publication status	Published - 31 Aug 2016

Keywords

Cu2ZnSnSe4
selenisation
optical spectroscopy
structure

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2016.03.018

Márquez-Prieto-etal-SEMSC-2016-Impact-of-the-selenisation-temperature-on-the-structural-and-opticalAccepted author manuscript, 863 KBLicence: CC BY-NC-ND 4.0

Cite this

Márquez-Prieto, J., Yakushev, M. V., Forbes, I., Krustok, J., Edwards, P. R., Zhivulko, V. D., Borodavchenko, O. M., Mudryi, A. V., Dimitrievska, M., Izquierdo-Roca, V., Pearsall, N., & Martin, R. W. (2016). Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers. Solar Energy Materials and Solar Cells, 152, 42-50. https://doi.org/10.1016/j.solmat.2016.03.018

@article{e7b873650e4e4ad9997d14848b0feb7d,

title = "Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers",

abstract = "We present structural and optical spectroscopy studies of thin films of Cu2ZnSnSe4 (CZTSe) with strong copper deficiency deposited on Mo/Glass substrates and selenised at 450, 500 or 550 °C. Solar cells fabricated from these films demonstrated efficiencies up to 7.4% for selenisation at 500 °C. Structural analysis based on X-ray diffraction and Raman spectroscopy revealed the presence of SnSe2 in the film selenised at 450 °C but not detected in the films selenised at higher temperatures. A progressive decrease of the Sn and Se content was observed as the selenisation temperature increased. Photoluminescence excitation was used to determine the bandgaps at 4.2 K. Detailed measurements of the temperature and excitation intensity dependencies of the photoluminescence spectra allow the recombination mechanisms of the observed emission bands to be identified as band-to-impurity and band-to-band transitions, and their evolution with selenisation temperature changes to be analysed. The strongest band-to-band transition is recorded in the PL spectra of the film selenised at 500 °C and can be observed from 6 K to room temperature. The compositional and structural changes in the films and their influence on the optoelectronic properties of CZTSe and solar cells are discussed. ",

keywords = "Cu2ZnSnSe4, selenisation, optical spectroscopy, structure",

author = "J. M{\'a}rquez-Prieto and Yakushev, {M. V.} and I. Forbes and J. Krustok and Edwards, {P. R.} and Zhivulko, {V. D.} and Borodavchenko, {O. M.} and Mudryi, {A. V.} and M. Dimitrievska and V. Izquierdo-Roca and N. Pearsall and Martin, {R. W.}",

year = "2016",

month = aug,

day = "31",

doi = "10.1016/j.solmat.2016.03.018",

language = "English",

volume = "152",

pages = "42--50",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

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Márquez-Prieto, J, Yakushev, MV, Forbes, I, Krustok, J, Edwards, PR, Zhivulko, VD, Borodavchenko, OM, Mudryi, AV, Dimitrievska, M, Izquierdo-Roca, V, Pearsall, N & Martin, RW 2016, 'Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers', Solar Energy Materials and Solar Cells, vol. 152, pp. 42-50. https://doi.org/10.1016/j.solmat.2016.03.018

TY - JOUR

T1 - Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

AU - Márquez-Prieto, J.

AU - Yakushev, M. V.

AU - Forbes, I.

AU - Krustok, J.

AU - Edwards, P. R.

AU - Zhivulko, V. D.

AU - Borodavchenko, O. M.

AU - Mudryi, A. V.

AU - Dimitrievska, M.

AU - Izquierdo-Roca, V.

AU - Pearsall, N.

AU - Martin, R. W.

PY - 2016/8/31

Y1 - 2016/8/31

N2 - We present structural and optical spectroscopy studies of thin films of Cu2ZnSnSe4 (CZTSe) with strong copper deficiency deposited on Mo/Glass substrates and selenised at 450, 500 or 550 °C. Solar cells fabricated from these films demonstrated efficiencies up to 7.4% for selenisation at 500 °C. Structural analysis based on X-ray diffraction and Raman spectroscopy revealed the presence of SnSe2 in the film selenised at 450 °C but not detected in the films selenised at higher temperatures. A progressive decrease of the Sn and Se content was observed as the selenisation temperature increased. Photoluminescence excitation was used to determine the bandgaps at 4.2 K. Detailed measurements of the temperature and excitation intensity dependencies of the photoluminescence spectra allow the recombination mechanisms of the observed emission bands to be identified as band-to-impurity and band-to-band transitions, and their evolution with selenisation temperature changes to be analysed. The strongest band-to-band transition is recorded in the PL spectra of the film selenised at 500 °C and can be observed from 6 K to room temperature. The compositional and structural changes in the films and their influence on the optoelectronic properties of CZTSe and solar cells are discussed.

AB - We present structural and optical spectroscopy studies of thin films of Cu2ZnSnSe4 (CZTSe) with strong copper deficiency deposited on Mo/Glass substrates and selenised at 450, 500 or 550 °C. Solar cells fabricated from these films demonstrated efficiencies up to 7.4% for selenisation at 500 °C. Structural analysis based on X-ray diffraction and Raman spectroscopy revealed the presence of SnSe2 in the film selenised at 450 °C but not detected in the films selenised at higher temperatures. A progressive decrease of the Sn and Se content was observed as the selenisation temperature increased. Photoluminescence excitation was used to determine the bandgaps at 4.2 K. Detailed measurements of the temperature and excitation intensity dependencies of the photoluminescence spectra allow the recombination mechanisms of the observed emission bands to be identified as band-to-impurity and band-to-band transitions, and their evolution with selenisation temperature changes to be analysed. The strongest band-to-band transition is recorded in the PL spectra of the film selenised at 500 °C and can be observed from 6 K to room temperature. The compositional and structural changes in the films and their influence on the optoelectronic properties of CZTSe and solar cells are discussed.

KW - Cu2ZnSnSe4

KW - selenisation

KW - optical spectroscopy

KW - structure

UR - http://www.sciencedirect.com/science/journal/09270248

U2 - 10.1016/j.solmat.2016.03.018

DO - 10.1016/j.solmat.2016.03.018

M3 - Article

SN - 0927-0248

VL - 152

SP - 42

EP - 50

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

Abstract

Keywords

UN SDGs

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Other files and links

Fingerprint

CAMECA SX100

Radiative recombination in Cu₂ZnSnSe₄ thin films with Cu deficiency and Zn excess

Cite this

Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

Abstract

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Equipment

CAMECA SX100

Research output

Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

Cite this

Radiative recombination in Cu₂ZnSnSe₄ thin films with Cu deficiency and Zn excess