Abstract
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.
Original language | English |
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Pages (from-to) | 1760–1761 |
Number of pages | 2 |
Journal | Microscopy and Microanalysis |
Volume | 25 |
Issue number | S2 |
DOIs | |
Publication status | Published - 5 Aug 2019 |
Keywords
- imaging
- extended defects
- low Z materials
- electron channeling contrast imaging (ECCI)
- new approaches
- challenges
- semiconductor Industry