Imaging extended defects in low Z materials using electron channelling contrast imaging – new approaches and challenges

G. Naresh-Kumar, A. Alasamari, Ben Hourahine, C. Trager-Cowan

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.
Original languageEnglish
Pages (from-to)1760–1761
Number of pages2
JournalMicroscopy and Microanalysis
Volume25
Issue numberS2
DOIs
Publication statusPublished - 5 Aug 2019

Keywords

  • imaging
  • extended defects
  • low Z materials
  • electron channeling contrast imaging (ECCI)
  • new approaches
  • challenges
  • semiconductor Industry

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