Abstract
| Original language | English |
|---|---|
| Article number | 065301 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 124 |
| Issue number | 6 |
| Early online date | 10 Aug 2018 |
| DOIs | |
| Publication status | E-pub ahead of print - 10 Aug 2018 |
Fingerprint
Keywords
- ECCI
- SEM
- semiconductors
- III - nitrides
Cite this
}
Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. / Naresh-Kumar, G.; Thomson, David; Zhang, Y.; Bai, J.; Jiu, L.; Yu, X.; Gong, Y. P.; Martin, Richard Smith; Wang, Tao; Trager-Cowan, Carol.
In: Journal of Applied Physics, Vol. 124, No. 6, 065301, 10.08.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging
AU - Naresh-Kumar, G.
AU - Thomson, David
AU - Zhang, Y.
AU - Bai, J.
AU - Jiu, L.
AU - Yu, X.
AU - Gong, Y. P.
AU - Martin, Richard Smith
AU - Wang, Tao
AU - Trager-Cowan, Carol
PY - 2018/8/10
Y1 - 2018/8/10
N2 - Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In the present work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD density was estimated to be ≈ 4 × 104 cm-1 and ≈ 5 × 108 cm-2 respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquires the backscattered electrons and latter collects the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials.
AB - Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In the present work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD density was estimated to be ≈ 4 × 104 cm-1 and ≈ 5 × 108 cm-2 respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquires the backscattered electrons and latter collects the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials.
KW - ECCI
KW - SEM
KW - semiconductors
KW - III - nitrides
UR - https://aip.scitation.org/journal/jap
U2 - 10.1063/1.5042515
DO - 10.1063/1.5042515
M3 - Article
VL - 124
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
M1 - 065301
ER -