Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

G. Naresh-Kumar, David Thomson, Y. Zhang, J. Bai, L. Jiu, X. Yu, Y. P. Gong, Richard Smith Martin, Tao Wang, Carol Trager-Cowan

Research output: Contribution to journalArticle

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Abstract

Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In the present work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD density was estimated to be ≈ 4 × 104 cm-1 and ≈ 5 × 108 cm-2 respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquires the backscattered electrons and latter collects the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials.
Original languageEnglish
Article number065301
Number of pages6
JournalJournal of Applied Physics
Volume124
Issue number6
Early online date10 Aug 2018
DOIs
Publication statusE-pub ahead of print - 10 Aug 2018

Fingerprint

crystal defects
electrons
rods
templates
defects
thin films
vapor phase epitaxy
nitrides
periodic variations
electron diffraction
electron microscopes
transmission electron microscopy
scanning
diffraction
metals

Keywords

  • ECCI
  • SEM
  • semiconductors
  • III - nitrides

Cite this

Naresh-Kumar, G. ; Thomson, David ; Zhang, Y. ; Bai, J. ; Jiu, L. ; Yu, X. ; Gong, Y. P. ; Martin, Richard Smith ; Wang, Tao ; Trager-Cowan, Carol. / Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. In: Journal of Applied Physics. 2018 ; Vol. 124, No. 6.
@article{1761edaa9fbf4ad1bdd83fb259bbb99a,
title = "Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging",
abstract = "Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In the present work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD density was estimated to be ≈ 4 × 104 cm-1 and ≈ 5 × 108 cm-2 respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquires the backscattered electrons and latter collects the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials.",
keywords = "ECCI, SEM, semiconductors, III - nitrides",
author = "G. Naresh-Kumar and David Thomson and Y. Zhang and J. Bai and L. Jiu and X. Yu and Gong, {Y. P.} and Martin, {Richard Smith} and Tao Wang and Carol Trager-Cowan",
year = "2018",
month = "8",
day = "10",
doi = "10.1063/1.5042515",
language = "English",
volume = "124",
journal = "Journal of Applied Physics",
issn = "0021-8979",
number = "6",

}

Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. / Naresh-Kumar, G.; Thomson, David; Zhang, Y.; Bai, J.; Jiu, L.; Yu, X.; Gong, Y. P.; Martin, Richard Smith; Wang, Tao; Trager-Cowan, Carol.

In: Journal of Applied Physics, Vol. 124, No. 6, 065301, 10.08.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

AU - Naresh-Kumar, G.

AU - Thomson, David

AU - Zhang, Y.

AU - Bai, J.

AU - Jiu, L.

AU - Yu, X.

AU - Gong, Y. P.

AU - Martin, Richard Smith

AU - Wang, Tao

AU - Trager-Cowan, Carol

PY - 2018/8/10

Y1 - 2018/8/10

N2 - Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In the present work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD density was estimated to be ≈ 4 × 104 cm-1 and ≈ 5 × 108 cm-2 respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquires the backscattered electrons and latter collects the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials.

AB - Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In the present work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD density was estimated to be ≈ 4 × 104 cm-1 and ≈ 5 × 108 cm-2 respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquires the backscattered electrons and latter collects the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials.

KW - ECCI

KW - SEM

KW - semiconductors

KW - III - nitrides

UR - https://aip.scitation.org/journal/jap

U2 - 10.1063/1.5042515

DO - 10.1063/1.5042515

M3 - Article

VL - 124

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 065301

ER -