Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

G. Naresh-Kumar, Benjamin Hourahine, A. Vilalta-Clemente, P. Ruterana, P. Gamarra, C. Lacam, M. Tordjman, M. A. di Forte-Poisson, P. J. Parbrook, A. P. Day, G. England, Carol Trager-Cowan

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning electron microscope – to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates.
LanguageEnglish
Pages424-426
Number of pages3
JournalPhysica Status Solidi A
Volume209
Issue number3
Early online date25 Jan 2012
DOIs
Publication statusPublished - Mar 2012

Fingerprint

Nitrides
nitrides
Electron microscopes
electron microscopes
Semiconductor materials
Scanning
Imaging techniques
Thin films
Defects
scanning
Electrons
defects
thin films
electrons
Aluminum Oxide
gray scale
Sapphire
Field emission
Lattice constants
Heterojunctions

Keywords

  • dislocations
  • electron channelling
  • SEM

Cite this

Naresh-Kumar, G. ; Hourahine, Benjamin ; Vilalta-Clemente, A. ; Ruterana, P. ; Gamarra, P. ; Lacam, C. ; Tordjman, M. ; Forte-Poisson, M. A. di ; Parbrook, P. J. ; Day, A. P. ; England, G. ; Trager-Cowan, Carol. / Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope. In: Physica Status Solidi A. 2012 ; Vol. 209, No. 3. pp. 424-426.
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abstract = "We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning electron microscope – to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates.",
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Naresh-Kumar, G, Hourahine, B, Vilalta-Clemente, A, Ruterana, P, Gamarra, P, Lacam, C, Tordjman, M, Forte-Poisson, MAD, Parbrook, PJ, Day, AP, England, G & Trager-Cowan, C 2012, 'Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope' Physica Status Solidi A, vol. 209, no. 3, pp. 424-426. https://doi.org/10.1002/pssa.201100416

Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope. / Naresh-Kumar, G.; Hourahine, Benjamin; Vilalta-Clemente, A.; Ruterana, P.; Gamarra, P.; Lacam, C.; Tordjman, M.; Forte-Poisson, M. A. di; Parbrook, P. J.; Day, A. P.; England, G.; Trager-Cowan, Carol.

In: Physica Status Solidi A, Vol. 209, No. 3, 03.2012, p. 424-426.

Research output: Contribution to journal › Article

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Naresh-Kumar G, Hourahine B, Vilalta-Clemente A, Ruterana P, Gamarra P, Lacam C et al. Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope. Physica Status Solidi A. 2012 Mar;209(3):424-426. https://doi.org/10.1002/pssa.201100416

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