TY - JOUR
T1 - Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope
AU - Naresh-Kumar, G.
AU - Hourahine, Benjamin
AU - Vilalta-Clemente, A.
AU - Ruterana, P.
AU - Gamarra, P.
AU - Lacam, C.
AU - Tordjman, M.
AU - Forte-Poisson, M. A. di
AU - Parbrook, P. J.
AU - Day, A. P.
AU - England, G.
AU - Trager-Cowan, Carol
PY - 2012/3
Y1 - 2012/3
N2 - We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning electron microscope – to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates.
AB - We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning electron microscope – to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates.
KW - dislocations
KW - electron channelling
KW - SEM
UR - http://www.scopus.com/inward/record.url?scp=84857750650&partnerID=8YFLogxK
U2 - 10.1002/pssa.201100416
DO - 10.1002/pssa.201100416
M3 - Article
SN - 1862-6300
VL - 209
SP - 424
EP - 426
JO - Physica Status Solidi A
JF - Physica Status Solidi A
IS - 3
ER -