Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

G. Naresh-Kumar, Benjamin Hourahine, A. Vilalta-Clemente, P. Ruterana, P. Gamarra, C. Lacam, M. Tordjman, M. A. di Forte-Poisson, P. J. Parbrook, A. P. Day, G. England, Carol Trager-Cowan

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning electron microscope – to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates.
LanguageEnglish
Pages424-426
Number of pages3
JournalPhysica Status Solidi A
Volume209
Issue number3
Early online date25 Jan 2012
DOIs
Publication statusPublished - Mar 2012

Fingerprint

Nitrides
nitrides
Electron microscopes
electron microscopes
Semiconductor materials
Scanning
Imaging techniques
Thin films
Defects
scanning
Electrons
defects
thin films
electrons
Aluminum Oxide
gray scale
Sapphire
Field emission
Lattice constants
Heterojunctions

Keywords

  • dislocations
  • electron channelling
  • SEM

Cite this

Naresh-Kumar, G. ; Hourahine, Benjamin ; Vilalta-Clemente, A. ; Ruterana, P. ; Gamarra, P. ; Lacam, C. ; Tordjman, M. ; Forte-Poisson, M. A. di ; Parbrook, P. J. ; Day, A. P. ; England, G. ; Trager-Cowan, Carol. / Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope. In: Physica Status Solidi A. 2012 ; Vol. 209, No. 3. pp. 424-426.
@article{ac0584a6c7d9471091201b781bc3cb2c,
title = "Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope",
abstract = "We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning electron microscope – to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates.",
keywords = "dislocations, electron channelling , SEM",
author = "G. Naresh-Kumar and Benjamin Hourahine and A. Vilalta-Clemente and P. Ruterana and P. Gamarra and C. Lacam and M. Tordjman and Forte-Poisson, {M. A. di} and Parbrook, {P. J.} and Day, {A. P.} and G. England and Carol Trager-Cowan",
year = "2012",
month = "3",
doi = "10.1002/pssa.201100416",
language = "English",
volume = "209",
pages = "424--426",
journal = "Physica Status Solidi A",
issn = "1862-6300",
number = "3",

}

Naresh-Kumar, G, Hourahine, B, Vilalta-Clemente, A, Ruterana, P, Gamarra, P, Lacam, C, Tordjman, M, Forte-Poisson, MAD, Parbrook, PJ, Day, AP, England, G & Trager-Cowan, C 2012, 'Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope' Physica Status Solidi A, vol. 209, no. 3, pp. 424-426. https://doi.org/10.1002/pssa.201100416

Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope. / Naresh-Kumar, G.; Hourahine, Benjamin; Vilalta-Clemente, A.; Ruterana, P.; Gamarra, P.; Lacam, C.; Tordjman, M.; Forte-Poisson, M. A. di; Parbrook, P. J.; Day, A. P.; England, G.; Trager-Cowan, Carol.

In: Physica Status Solidi A, Vol. 209, No. 3, 03.2012, p. 424-426.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

AU - Naresh-Kumar, G.

AU - Hourahine, Benjamin

AU - Vilalta-Clemente, A.

AU - Ruterana, P.

AU - Gamarra, P.

AU - Lacam, C.

AU - Tordjman, M.

AU - Forte-Poisson, M. A. di

AU - Parbrook, P. J.

AU - Day, A. P.

AU - England, G.

AU - Trager-Cowan, Carol

PY - 2012/3

Y1 - 2012/3

N2 - We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning electron microscope – to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates.

AB - We describe the use of electron channelling contrast imaging (ECCI) – in a field emission scanning electron microscope – to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates.

KW - dislocations

KW - electron channelling

KW - SEM

UR - http://www.scopus.com/inward/record.url?scp=84857750650&partnerID=8YFLogxK

U2 - 10.1002/pssa.201100416

DO - 10.1002/pssa.201100416

M3 - Article

VL - 209

SP - 424

EP - 426

JO - Physica Status Solidi A

T2 - Physica Status Solidi A

JF - Physica Status Solidi A

SN - 1862-6300

IS - 3

ER -