IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

Niall Oswald; Bernard Stark; Neville McNeill

doi:10.1049/cp.2012.0207

IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

Niall Oswald
, Bernard Stark
, Neville McNeill

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

10 Citations (Scopus)

Abstract

A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.

Original language	English
Title of host publication	6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012)
Place of Publication	Stevenage
DOIs	https://doi.org/10.1049/cp.2012.0207
Publication status	Published - 27 Mar 2012
Externally published	Yes
Event	6th IET International Conference on Power Electronics, Machines and Drives PEMD 2012 - Bristol, United Kingdom Duration: 27 Mar 2012 → 29 Mar 2012

Conference

Conference	6th IET International Conference on Power Electronics, Machines and Drives PEMD 2012
Country/Territory	United Kingdom
City	Bristol
Period	27/03/12 → 29/03/12

Keywords

power bipolar transistors
driver circuits
insulated gate bipolar transistor
power losses

Access to Document

10.1049/cp.2012.0207

Cite this

@inproceedings{277d1e9b136f40fe8278f742cbc5bc18,

title = "IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses",

abstract = "A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.",

keywords = "power bipolar transistors, driver circuits, insulated gate bipolar transistor , power losses",

author = "Niall Oswald and Bernard Stark and Neville McNeill",

year = "2012",

month = mar,

day = "27",

doi = "10.1049/cp.2012.0207",

language = "English",

isbn = "978-1-84919-616-1",

booktitle = "6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012)",

note = "6th IET International Conference on Power Electronics, Machines and Drives PEMD 2012 ; Conference date: 27-03-2012 Through 29-03-2012",

}

Oswald, N, Stark, B & McNeill, N 2012, IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses. in 6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012). Stevenage, 6th IET International Conference on Power Electronics, Machines and Drives PEMD 2012, Bristol, United Kingdom, 27/03/12. https://doi.org/10.1049/cp.2012.0207

IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses. / Oswald, Niall; Stark, Bernard; McNeill, Neville.
6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012). Stevenage, 2012.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

AU - Oswald, Niall

AU - Stark, Bernard

AU - McNeill, Neville

PY - 2012/3/27

Y1 - 2012/3/27

N2 - A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.

AB - A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.

KW - power bipolar transistors

KW - driver circuits

KW - insulated gate bipolar transistor

KW - power losses

UR - http://ieeexplore.ieee.org/document/6242057/

U2 - 10.1049/cp.2012.0207

DO - 10.1049/cp.2012.0207

M3 - Conference contribution book

SN - 978-1-84919-616-1

BT - 6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012)

CY - Stevenage

T2 - 6th IET International Conference on Power Electronics, Machines and Drives PEMD 2012

Y2 - 27 March 2012 through 29 March 2012

ER -

IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

Abstract

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Keywords

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