IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses

Niall Oswald, Bernard Stark, Neville McNeill

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

5 Citations (Scopus)

Abstract

A gate drive circuit which applies a programmed voltage profile to the gate of an IGBT is used to demonstrate that an improvement of approximately 20 dB can be made to the trade-off realised between turn-on switching losses and EMI generation, compared to conventional gate drive techniques. The measurement and analysis techniques employed to quantify and improve this trade-off are presented, and the EMI-critical aspects of IGBT switching behaviour are identified using these techniques.
Original languageEnglish
Title of host publication6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012)
Place of PublicationStevenage
DOIs
Publication statusPublished - 27 Mar 2012
Externally publishedYes
Event6th IET International Conference on Power Electronics, Machines and Drives PEMD 2012 - Bristol, United Kingdom
Duration: 27 Mar 201229 Mar 2012

Conference

Conference6th IET International Conference on Power Electronics, Machines and Drives PEMD 2012
CountryUnited Kingdom
CityBristol
Period27/03/1229/03/12

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Keywords

  • power bipolar transistors
  • driver circuits
  • insulated gate bipolar transistor
  • power losses

Cite this

Oswald, N., Stark, B., & McNeill, N. (2012). IGBT gate voltage profiling as a means of realising an improved trade-off between EMI generation and turn-on switching losses. In 6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012) Stevenage. https://doi.org/10.1049/cp.2012.0207