Identification of the prime optical center in GaN:Eu3+

I.S. Roqan, K.P. O'Donnell, R.W. Martin, P.R. Edwards, S.F. Song, A. Vantomme, K. Lorenz, E. Alves, M. Boćkowski

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

We identify a dominant light-emitting center in ion-implanted GaN:Eu3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional EuGa defect. It lacks a 'subgap' excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its 7F2 level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.
Original languageEnglish
Article number085209
Number of pages5
JournalPhysical Review B
Volume81
Issue number1
DOIs
Publication statusPublished - 10 Feb 2010

    Fingerprint

Keywords

  • optics
  • GaN
  • Eu3+

Cite this