Abstract
We identify a dominant light-emitting center in ion-implanted GaN:Eu3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional EuGa defect. It lacks a 'subgap' excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its 7F2 level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.
Original language | English |
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Article number | 085209 |
Number of pages | 5 |
Journal | Physical Review B |
Volume | 81 |
Issue number | 1 |
DOIs | |
Publication status | Published - 10 Feb 2010 |
Keywords
- optics
- GaN
- Eu3+