Identification of the prime optical center in GaN:Eu3+

I.S. Roqan, K.P. O'Donnell, R.W. Martin, P.R. Edwards, S.F. Song, A. Vantomme, K. Lorenz, E. Alves, M. Boćkowski

Research output: Contribution to journal › Article

54 Citations (Scopus)

Abstract

We identify a dominant light-emitting center in ion-implanted GaN:Eu3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional EuGa defect. It lacks a 'subgap' excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its 7F2 level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.
LanguageEnglish
Article number085209
Number of pages5
JournalPhysical Review B
Volume81
Issue number1
DOIs
Publication statusPublished - 10 Feb 2010

Fingerprint

Crystal defects
Rutherford backscattering spectroscopy
Spectrometry
Luminescence
Energy gap
Diffraction
Annealing
Ions
X rays
Defects
Temperature
defects
backscattering
x ray diffraction
luminescence
damage
annealing
decay
spectroscopy
excitation

Keywords

  • optics
  • GaN
  • Eu3+

Cite this

Roqan, I.S. ; O'Donnell, K.P. ; Martin, R.W. ; Edwards, P.R. ; Song, S.F. ; Vantomme, A. ; Lorenz, K. ; Alves, E. ; Boćkowski, M. / Identification of the prime optical center in GaN:Eu3+. In: Physical Review B. 2010 ; Vol. 81, No. 1.
@article{4f4791a77b14451aa191f68eca19a345,
title = "Identification of the prime optical center in GaN:Eu3+",
abstract = "We identify a dominant light-emitting center in ion-implanted GaN:Eu3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional EuGa defect. It lacks a 'subgap' excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its 7F2 level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.",
keywords = "optics, GaN, Eu3+",
author = "I.S. Roqan and K.P. O'Donnell and R.W. Martin and P.R. Edwards and S.F. Song and A. Vantomme and K. Lorenz and E. Alves and M. Boćkowski",
year = "2010",
month = "2",
day = "10",
doi = "10.1103/PhysRevB.81.085209",
language = "English",
volume = "81",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
number = "1",

}

Roqan, IS, O'Donnell, KP, Martin, RW, Edwards, PR, Song, SF, Vantomme, A, Lorenz, K, Alves, E & Boćkowski, M 2010, 'Identification of the prime optical center in GaN:Eu3+' Physical Review B, vol. 81, no. 1, 085209. https://doi.org/10.1103/PhysRevB.81.085209

Identification of the prime optical center in GaN:Eu3+. / Roqan, I.S.; O'Donnell, K.P.; Martin, R.W.; Edwards, P.R.; Song, S.F.; Vantomme, A.; Lorenz, K.; Alves, E.; Boćkowski, M.

In: Physical Review B, Vol. 81, No. 1, 085209, 10.02.2010.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Identification of the prime optical center in GaN:Eu3+

AU - Roqan, I.S.

AU - O'Donnell, K.P.

AU - Martin, R.W.

AU - Edwards, P.R.

AU - Song, S.F.

AU - Vantomme, A.

AU - Lorenz, K.

AU - Alves, E.

AU - Boćkowski, M.

PY - 2010/2/10

Y1 - 2010/2/10

N2 - We identify a dominant light-emitting center in ion-implanted GaN:Eu3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional EuGa defect. It lacks a 'subgap' excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its 7F2 level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.

AB - We identify a dominant light-emitting center in ion-implanted GaN:Eu3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional EuGa defect. It lacks a 'subgap' excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its 7F2 level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.

KW - optics

KW - GaN

KW - Eu3+

UR - http://link.aps.org/doi/10.1103/PhysRevB.81.085209

U2 - 10.1103/PhysRevB.81.085209

DO - 10.1103/PhysRevB.81.085209

M3 - Article

VL - 81

JO - Physical Review B: Condensed Matter and Materials Physics

T2 - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 1

M1 - 085209

ER -

Roqan IS, O'Donnell KP, Martin RW, Edwards PR, Song SF, Vantomme A et al. Identification of the prime optical center in GaN:Eu3+. Physical Review B. 2010 Feb 10;81(1). 085209. https://doi.org/10.1103/PhysRevB.81.085209

Access to Document