Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

D. Nicol; Y. Oshima; J. W. Roberts; L. Penman; D. Cameron; P. R. Chalker; R. W. Martin; F. C.-P. Massabuau

doi:10.1063/5.0135103

Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

D. Nicol, Y. Oshima, J. W. Roberts, L. Penman, D. Cameron, P. R. Chalker, R. W. Martin, F. C.-P. Massabuau

Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

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Abstract

Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.

Original language	English
Article number	062102
Number of pages	6
Journal	Applied Physics Letters
Volume	122
Issue number	6
DOIs	https://doi.org/10.1063/5.0135103
Publication status	Published - 7 Feb 2023

Keywords

photoluminescence
α-Ga2O3 films
Gallium oxide
plasma

Access to Document

10.1063/5.0135103Licence: CC BY 4.0

Nicol-etal-APL-2023-Hydrogen-related-3-8-eV-UV-luminescenceFinal published version, 905 KBLicence: CC BY 4.0

1 Finished
2 Active

UV-Vis Spectrophotometer (with integrated sphere) - Shimadzu UV-2600
Massabuau, F. (Principal Investigator)
16/02/21 → …
Project: Equipment only
Photoluminescence setup JA2.02A - 224 nm laser (Photon System HeAg 70-224SL)
Massabuau, F. (Principal Investigator)
21/01/21 → …
Project: Equipment only
Doctoral Training Partnership 2020-2021 University of Strathclyde | Nicol, David
Massabuau, F. (Principal Investigator), Martin, R. (Co-investigator) & Nicol, D. (Research Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/10/20 → 1/02/24
Project: Research Studentship - Internally Allocated

Data for: "Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3"
Nicol, D. (Creator), Massabuau, F. (Supervisor), Roberts, J. W. (Creator), Oshima, Y. (Creator), Penman, L. (Creator), Cameron, D. (Creator), Chalker, P. (Creator) & Martin, R. (Creator), University of Strathclyde, 20 Feb 2023
DOI: 10.15129/93523e0c-3809-4f8d-ab39-bd029cad054a
Dataset

EPSRC Capital Core Equipment Award 2020
Massabuau, F. (Recipient), 2020
Prize: Other distinction

Cite this

@article{e4bf6b79fe7c4bb8a6f7bead08a83be3,

title = "Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3",

abstract = "Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.",

keywords = "photoluminescence, α-Ga2O3 films, Gallium oxide, plasma",

author = "D. Nicol and Y. Oshima and Roberts, {J. W.} and L. Penman and D. Cameron and Chalker, {P. R.} and Martin, {R. W.} and Massabuau, {F. C.-P.}",

year = "2023",

month = feb,

day = "7",

doi = "10.1063/5.0135103",

language = "English",

volume = "122",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "6",

}

TY - JOUR

T1 - Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

AU - Nicol, D.

AU - Oshima, Y.

AU - Roberts, J. W.

AU - Penman, L.

AU - Cameron, D.

AU - Chalker, P. R.

AU - Martin, R. W.

AU - Massabuau, F. C.-P.

PY - 2023/2/7

Y1 - 2023/2/7

N2 - Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.

AB - Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.

KW - photoluminescence

KW - α-Ga2O3 films

KW - Gallium oxide

KW - plasma

U2 - 10.1063/5.0135103

DO - 10.1063/5.0135103

M3 - Article

SN - 0003-6951

VL - 122

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062102

ER -

Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

Abstract

Keywords

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Projects

UV-Vis Spectrophotometer (with integrated sphere) - Shimadzu UV-2600

Photoluminescence setup JA2.02A - 224 nm laser (Photon System HeAg 70-224SL)

Doctoral Training Partnership 2020-2021 University of Strathclyde | Nicol, David

Datasets

Data for: "Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3"

Prizes

EPSRC Capital Core Equipment Award 2020

Cite this