Hydrodynamic theory of partially degenerate electron-hole fluids in semiconductors

M Akbari-Moghanjoughi, B Eliasson

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A quantum hydrodynamic (QHD) theory for high-frequency electron-hole Langmuir and acoustic-like oscillations as well as static charge shielding effects in arbitrarily doped semiconductors is presented. The model includes kinetic corrections to the quantum statistical pressure and to the quantum Bohm potential for partially degenerate electrons and holes at finite temperatures. The holes contribute to the oscillations and screening effects in semiconductors in a similar manner as real particles. The dielectric functions are derived in the high-frequency limit for wave excitations and in the low-frequency limit for the study of static screening. The dispersion relation for the Langmuir and acoustic-like oscillations is examined for different parameters of doped silicon (Si). Some interesting properties and differences of electron hole dynamical behavior in N- and P-type Si are pointed out. Holes are also observed to enhance an attractive charge shielding effect when the semiconductor is highly acceptor-doped.
LanguageEnglish
Article number105601
Number of pages10
JournalPhysica Scripta
Volume91
Issue number10
DOIs
Publication statusPublished - 1 Sep 2016

Fingerprint

Semiconductors
Hydrodynamics
hydrodynamics
Electron
Fluid
fluids
Oscillation
oscillations
Screening
shielding
Silicon
Acoustics
screening
Charge
Quantum Hydrodynamics
acoustics
wave excitation
silicon
Kinetic Model
Dispersion Relation

Keywords

  • plasma dynamics
  • electron gas
  • quantum statistical mechanics
  • quantum hydrodynamic theory
  • oscillations
  • static charge shielding effects
  • semiconductors
  • partially degenerate electrons
  • Langmuir oscillations
  • acoustic-like oscillations
  • electron-hole plasmas

Cite this

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title = "Hydrodynamic theory of partially degenerate electron-hole fluids in semiconductors",
abstract = "A quantum hydrodynamic (QHD) theory for high-frequency electron-hole Langmuir and acoustic-like oscillations as well as static charge shielding effects in arbitrarily doped semiconductors is presented. The model includes kinetic corrections to the quantum statistical pressure and to the quantum Bohm potential for partially degenerate electrons and holes at finite temperatures. The holes contribute to the oscillations and screening effects in semiconductors in a similar manner as real particles. The dielectric functions are derived in the high-frequency limit for wave excitations and in the low-frequency limit for the study of static screening. The dispersion relation for the Langmuir and acoustic-like oscillations is examined for different parameters of doped silicon (Si). Some interesting properties and differences of electron hole dynamical behavior in N- and P-type Si are pointed out. Holes are also observed to enhance an attractive charge shielding effect when the semiconductor is highly acceptor-doped.",
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Hydrodynamic theory of partially degenerate electron-hole fluids in semiconductors. / Akbari-Moghanjoughi, M; Eliasson, B.

In: Physica Scripta, Vol. 91, No. 10, 105601, 01.09.2016.

Research output: Contribution to journalArticle

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AB - A quantum hydrodynamic (QHD) theory for high-frequency electron-hole Langmuir and acoustic-like oscillations as well as static charge shielding effects in arbitrarily doped semiconductors is presented. The model includes kinetic corrections to the quantum statistical pressure and to the quantum Bohm potential for partially degenerate electrons and holes at finite temperatures. The holes contribute to the oscillations and screening effects in semiconductors in a similar manner as real particles. The dielectric functions are derived in the high-frequency limit for wave excitations and in the low-frequency limit for the study of static screening. The dispersion relation for the Langmuir and acoustic-like oscillations is examined for different parameters of doped silicon (Si). Some interesting properties and differences of electron hole dynamical behavior in N- and P-type Si are pointed out. Holes are also observed to enhance an attractive charge shielding effect when the semiconductor is highly acceptor-doped.

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