### Abstract

Language | English |
---|---|

Article number | 105601 |

Number of pages | 10 |

Journal | Physica Scripta |

Volume | 91 |

Issue number | 10 |

DOIs | |

Publication status | Published - 1 Sep 2016 |

### Fingerprint

### Keywords

- plasma dynamics
- electron gas
- quantum statistical mechanics
- quantum hydrodynamic theory
- oscillations
- static charge shielding effects
- semiconductors
- partially degenerate electrons
- Langmuir oscillations
- acoustic-like oscillations
- electron-hole plasmas

### Cite this

*Physica Scripta*,

*91*(10), [105601]. https://doi.org/10.1088/0031-8949/91/10/105601

}

*Physica Scripta*, vol. 91, no. 10, 105601. https://doi.org/10.1088/0031-8949/91/10/105601

**Hydrodynamic theory of partially degenerate electron-hole fluids in semiconductors.** / Akbari-Moghanjoughi, M; Eliasson, B.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Hydrodynamic theory of partially degenerate electron-hole fluids in semiconductors

AU - Akbari-Moghanjoughi, M

AU - Eliasson, B

N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Physica Scripta. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://iopscience.iop.org/article/10.1088/0031-8949/91/10/105601

PY - 2016/9/1

Y1 - 2016/9/1

N2 - A quantum hydrodynamic (QHD) theory for high-frequency electron-hole Langmuir and acoustic-like oscillations as well as static charge shielding effects in arbitrarily doped semiconductors is presented. The model includes kinetic corrections to the quantum statistical pressure and to the quantum Bohm potential for partially degenerate electrons and holes at finite temperatures. The holes contribute to the oscillations and screening effects in semiconductors in a similar manner as real particles. The dielectric functions are derived in the high-frequency limit for wave excitations and in the low-frequency limit for the study of static screening. The dispersion relation for the Langmuir and acoustic-like oscillations is examined for different parameters of doped silicon (Si). Some interesting properties and differences of electron hole dynamical behavior in N- and P-type Si are pointed out. Holes are also observed to enhance an attractive charge shielding effect when the semiconductor is highly acceptor-doped.

AB - A quantum hydrodynamic (QHD) theory for high-frequency electron-hole Langmuir and acoustic-like oscillations as well as static charge shielding effects in arbitrarily doped semiconductors is presented. The model includes kinetic corrections to the quantum statistical pressure and to the quantum Bohm potential for partially degenerate electrons and holes at finite temperatures. The holes contribute to the oscillations and screening effects in semiconductors in a similar manner as real particles. The dielectric functions are derived in the high-frequency limit for wave excitations and in the low-frequency limit for the study of static screening. The dispersion relation for the Langmuir and acoustic-like oscillations is examined for different parameters of doped silicon (Si). Some interesting properties and differences of electron hole dynamical behavior in N- and P-type Si are pointed out. Holes are also observed to enhance an attractive charge shielding effect when the semiconductor is highly acceptor-doped.

KW - plasma dynamics

KW - electron gas

KW - quantum statistical mechanics

KW - quantum hydrodynamic theory

KW - oscillations

KW - static charge shielding effects

KW - semiconductors

KW - partially degenerate electrons

KW - Langmuir oscillations

KW - acoustic-like oscillations

KW - electron-hole plasmas

UR - http://iopscience.iop.org/journal/1402-4896

U2 - 10.1088/0031-8949/91/10/105601

DO - 10.1088/0031-8949/91/10/105601

M3 - Article

VL - 91

JO - Physica Scripta

T2 - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - 10

M1 - 105601

ER -