Hybrid group IV nanophotonic structures incorporating diamond silicon-vacancy color centers

Jingyuan Linda Zhang, Hitoshi Ishiwata, Thomas M. Babinec, Marina Radulaski, Kai Müller, Konstantinos G. Lagoudakis, Constantin Dory, Jeremy Dahl, Robert Edgington, Veronique Soulière, Gabriel Ferro, Andrey A. Fokin, Peter R. Schreiner, Zhi-Xun Shen, Nicholas A. Melosh, Jelena Vučković

Research output: Contribution to journalArticle

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Abstract

We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV-) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV- color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV- on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV- centers. Scanning confocal photoluminescence measurements reveal optically active SiV- lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV- lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV- centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.
LanguageEnglish
Pages212-217
Number of pages6
JournalNano Letters
Volume16
Issue number1
DOIs
Publication statusPublished - 22 Dec 2015

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Nanophotonics
Color centers
Diamond
Silicon
color centers
Vacancies
Diamonds
diamonds
silicon
Nanodiamonds
Quantum computers
quantum computation
Silicon carbide
Ion implantation
silicon carbides
Linewidth
Temperature
Photonics
Seed
ion implantation

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Zhang, J. L., Ishiwata, H., Babinec, T. M., Radulaski, M., Müller, K., Lagoudakis, K. G., ... Vučković, J. (2015). Hybrid group IV nanophotonic structures incorporating diamond silicon-vacancy color centers. Nano Letters, 16(1), 212-217. https://doi.org/10.1021/acs.nanolett.5b03515
Zhang, Jingyuan Linda ; Ishiwata, Hitoshi ; Babinec, Thomas M. ; Radulaski, Marina ; Müller, Kai ; Lagoudakis, Konstantinos G. ; Dory, Constantin ; Dahl, Jeremy ; Edgington, Robert ; Soulière, Veronique ; Ferro, Gabriel ; Fokin, Andrey A. ; Schreiner, Peter R. ; Shen, Zhi-Xun ; Melosh, Nicholas A. ; Vučković, Jelena. / Hybrid group IV nanophotonic structures incorporating diamond silicon-vacancy color centers. In: Nano Letters. 2015 ; Vol. 16, No. 1. pp. 212-217.
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abstract = "We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV-) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV- color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV- on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV- centers. Scanning confocal photoluminescence measurements reveal optically active SiV- lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV- lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV- centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.",
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Zhang, JL, Ishiwata, H, Babinec, TM, Radulaski, M, Müller, K, Lagoudakis, KG, Dory, C, Dahl, J, Edgington, R, Soulière, V, Ferro, G, Fokin, AA, Schreiner, PR, Shen, Z-X, Melosh, NA & Vučković, J 2015, 'Hybrid group IV nanophotonic structures incorporating diamond silicon-vacancy color centers' Nano Letters, vol. 16, no. 1, pp. 212-217. https://doi.org/10.1021/acs.nanolett.5b03515

Hybrid group IV nanophotonic structures incorporating diamond silicon-vacancy color centers. / Zhang, Jingyuan Linda; Ishiwata, Hitoshi; Babinec, Thomas M.; Radulaski, Marina; Müller, Kai; Lagoudakis, Konstantinos G.; Dory, Constantin; Dahl, Jeremy; Edgington, Robert; Soulière, Veronique; Ferro, Gabriel; Fokin, Andrey A.; Schreiner, Peter R.; Shen, Zhi-Xun; Melosh, Nicholas A.; Vučković, Jelena.

In: Nano Letters, Vol. 16, No. 1, 22.12.2015, p. 212-217.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hybrid group IV nanophotonic structures incorporating diamond silicon-vacancy color centers

AU - Zhang, Jingyuan Linda

AU - Ishiwata, Hitoshi

AU - Babinec, Thomas M.

AU - Radulaski, Marina

AU - Müller, Kai

AU - Lagoudakis, Konstantinos G.

AU - Dory, Constantin

AU - Dahl, Jeremy

AU - Edgington, Robert

AU - Soulière, Veronique

AU - Ferro, Gabriel

AU - Fokin, Andrey A.

AU - Schreiner, Peter R.

AU - Shen, Zhi-Xun

AU - Melosh, Nicholas A.

AU - Vučković, Jelena

PY - 2015/12/22

Y1 - 2015/12/22

N2 - We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV-) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV- color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV- on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV- centers. Scanning confocal photoluminescence measurements reveal optically active SiV- lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV- lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV- centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

AB - We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV-) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV- color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV- on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV- centers. Scanning confocal photoluminescence measurements reveal optically active SiV- lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV- lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV- centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

U2 - 10.1021/acs.nanolett.5b03515

DO - 10.1021/acs.nanolett.5b03515

M3 - Article

VL - 16

SP - 212

EP - 217

JO - Nano Letters

T2 - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 1

ER -